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  • 1
    Electronic Resource
    Electronic Resource
    Optical properties and quantum efficiency of a-Si1−xCxB: H/a-Si@B: H solar cells (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 568-574 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of all components of heterojunction solar cells based on hydrogenated amorphous silicon (a-Si:H) have been measured individually. By combining these data with knowledge of the cell geometry, an envelope quantum efficiency curve is generated, being simply the fraction of incident photons absorbed in the i layer of the p-i-n cell. Resultant curves for typical cell dimensions are seen to agree remarkably well with observed values for cells with long minority-carrier collection lengths. The model is then used as a diagnostic tool, and finally is demonstrated to have predictive value in the quest for further optimization of solar-cell performance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334739
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Contact resistance measurements for hydrogenated amorphous silicon solar cell structures (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1682-1687 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique for measuring the electrical characteristics of contacts to doped hydrogenated amorphous silicon (a-Si:H) or other high-resistivity thin-film semiconductors is developed. Experimental results for metal and conductive transparent oxide contacts to both n- and p-type a-Si:H are presented and the significance of these values to solar cell applications discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336431
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Kinetics of the generation and annealing of deep defects and recombination centers in amorphous silicon (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1644-1646 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The number of deep defects (as measured by sub-band-gap optical absorption) and the number of recombination centers (as measured by steady-state photoconductivity) in high quality undoped hydrogenated amorphous silicon are monitored as the film undergoes light-induced defect generation and thermal annealing (the Staebler–Wronski effect). The kinetics of the growth in the density of deep defects agree well with the kinetics of spin centers reported by Stutzmann, Jackson, and Tsai. [Appl. Phys. Lett. 45, 1075 (1984)]. The density of recombination centers is directly related, though not simply proportional to, the density of deep defects; as samples are annealed, the recombination center density drops much more quickly than the total defect density. This behavior is shown to arise if the distribution of defect energy levels corresponds to a distribution of defect annealing energies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99937
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Determination of the D 0/− level in amorphous Si,Ge:H(F) by time-of-flight charge collection (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1542-1544 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe and demonstrate a new method for determining the density of states of the doubly occupied D0/− level in amorphous hydrogenated silicon and its alloys. The total charge collected during an electron time-of-flight measurement is determined as a function of T. T determines the energy E from which electrons are emitted during the measurement. Variation of T (and E) probes the local density of states. We present results for hydrogenated amorphous silicon before and after light soaking, and for amorphous silicon-germanium (a-Si,Ge:H,F) alloys.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99950
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    Paper (German National Licenses)
    Fulltext
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