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  • 1
    Electronic Resource
    Electronic Resource
    Temperature dependence of the lasing wavelength of InGaAs quantum dot lasers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4859-4861 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We observe that the emission wavelength of edge-emitting InGaAs quantum dot lasers has a much weaker temperature dependence (0.6 Å K−1) than equivalent quantum well devices (3 Å K−1). Measured gain and absorption spectra show that the gain peak wavelength due to dot states is almost independent of temperature for a given value of peak gain whereas the absorption edge shifts at a rate of about 2 Å K−1. Above 100 K the occupancy of dot states can be described by Fermi functions and on this basis we find that the measured gain and absorption spectra are in excellent quantitative agreement. Although the band edge energy reduces with increasing temperature, this analysis shows that the energy distribution of dot states matches the evolution of the Fermi functions such as to leave the quasi Fermi level separation and the wavelength of the gain peak unchanged as a function of temperature for a given value of peak gain. This energy distribution is a consequence of the dot size distribution so the match to the Fermi functions is probably fortuitous. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1402666
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  • 2
    Electronic Resource
    Electronic Resource
    On the determination of internal optical mode loss of semiconductor lasers (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2365-2367 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Use is made of a numerical simulation of the light—current characteristic to examine the errors which may arise in the determination of the optical mode loss (αi) from the cavity length dependence of the external differential efficiency (ηextd). In particular, we focus on the effects of incomplete Fermi level pinning and carrier leakage, and show that αi can only be determined correctly if ηextd is determined under conditions where it is invariant both with current level and temperature. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118875
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  • 3
    Electronic Resource
    Electronic Resource
    Threshold current temperature dependence of GaInP/(AlyGa1−y)InP 670 nm quantum well lasers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1265-1267 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of threshold current of (AlyGa1−y)InP/GaInP quantum well lasers (y=0.3, 0.4, and 0.5) has been investigated and used to characterize thermally activated loss mechanisms above room temperature. We show good agreement between activation energies measured by Arrhenius analysis and those expected for the loss of electrons from the well to the X-conduction band minima in the barrier. Our analysis uses measured band gaps of the actual structures, avoiding assumptions about the alloy compositions, spontaneous emission data to subtract radiative and other direct gap processes, and recent band gap data for this alloy system. This provides convincing experimental confirmation of the loss of electrons from the indirect minima as the preferred process causing the rise in current at high temperature in these lasers. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114392
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  • 4
    Electronic Resource
    Electronic Resource
    Measurement of optical mode loss in visible emitting lasers (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1975-1977 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a technique for direct measurement of the passive optical mode loss of a semiconductor laser or similar semiconductor waveguide structure, based upon measurement of the attenuation of optically excited luminescence in the guided mode as a function of distance traveled along the passive guide. A spectrometer is used to select luminescence in the low energy tail of the spectrum which is subject to very little reabsorption. We have applied the method to a series of highly strained GaInP quantum well laser structures and observe an increase in the mode loss from 9.9 cm−1 for 1% strain to 46 cm−1 for 1.7% strain. This correlates with the appearance of clustered regions in the highly strained wells observed by transmission electron microscopy (TEM). © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119759
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  • 5
    Electronic Resource
    Electronic Resource
    Direct monitoring of thermally activated leakage current in AlGaInP laser diodes (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2540-2542 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using specially prepared structures, we have observed emission from a layer of direct-gap "monitor" material placed between the p-contact layer and p-cladding layer of a conventional 670 nm GaInP laser diode at room temperature. This observation provides direct evidence for electron leakage through the p-cladding layer in these devices. Furthermore, although emission from the quantum well and waveguide core both pin above threshold, indicating that the Fermi levels clamp throughout the active region, the monitor emission continues to rise above threshold. This is characteristic of a drift component to the leakage current, which we have confirmed by a simulation of the carrier transport processes through the cladding layer with and without drift. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123891
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  • 6
    Electronic Resource
    Electronic Resource
    Spectral analysis of InGaAs/GaAs quantum-dot lasers (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2169-2171 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The cause of the unusual spectral distribution, often observed in InGaAs/GaAs quantum-dot lasers, is investigated by analyzing the spectra from devices fabricated with different substrate thickness (100–400 μm). Using a Fourier transform analysis to determine the optical path length, it is found that the measured modulation period correlates with the device thickness. Such a result provides evidence for spectral modulation mediated by the device structure rather than the quantum-dot material itself and is consistent with the idea that the modulation is due to a mode propagating in the transparent substrate. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124954
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  • 7
    Electronic Resource
    Electronic Resource
    Fermi level pinning and differential efficiency in GaInP quantum well laser diodes (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1073-1075 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Analysis of spontaneous emission spectra of GaInP quantum well laser diodes above and below threshold show that the quasi-Fermi level separation pins within the quantum wells but not throughout the whole device structure. By reproducing the temperature and cavity length dependence of the external differential efficiency using these measurements it is shown that a value of internal differential efficiency which is nonunity is due to current spreading and incomplete carrier injection and that the temperature dependence is due to the temperature dependence of the efficiency with which carriers are injected into the quantum well.© 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118488
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  • 8
    Electronic Resource
    Electronic Resource
    Determination of single-pass optical gain and internal loss using a multisection device (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2527-2529 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a technique for the measurement of optical gain and loss in semiconductor lasers using a single, multisection device. The method provides a complete description of the gain spectrum in absolute units and over a wide current range. Comparison of the transverse electric and transverse magnetic polarized spectra also provides the quasi-Fermi-level energy separation. Measurements on AlGaInP quantum well laser structures with emission wavelengths close to 670 nm show an internal loss of 10 cm−1 and peak gain values up to 4000 cm−1 for current densities up to 4 kA cm−2. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125066
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  • 9
    Electronic Resource
    Electronic Resource
    Electron transport in AlGaInP quantum well lasers (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1748-1750 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By placing a direct-gap monitor layer (or collector) in the p-cladding layer of red-emitting AlGaInP laser diode structures, we have studied the transport of electrons through this layer by observation of spontaneous emission. Pulsed optical excitation superimposed on cw electrical injection has been used to determine the delay time between optical injection of carriers into the well and radiative recombination from the monitor pit. Computer simulations using measured values of minority carrier lifetime for the well and monitor layer show that the transit time for electrons through the p-cladding layer correspond to an electron mobility of 160 cm2/V s. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124807
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  • 10
    Electronic Resource
    Electronic Resource
    Optical mode loss and gain of multiple-layer quantum-dot lasers (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2629-2631 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using an electrically pumped multisection technique, we have directly measured the internal optical mode loss of semiconductor-laser structures containing 1, 3, 5, and 7 layers of uncoupled InGaAs quantum dots. The optical loss does not increase with the number of dot layers so higher net modal gain can be achieved by using multiple layers. The maximum modal gain obtained from the ground state increases with dot layer number from 10±4 cm−1 for a single layer to 49±4 cm−1 for the 7 layer sample, which is typical of the threshold gain requirement of a 350 μm long device with uncoated facets. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1366652
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