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  • 1
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1146-1148 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: This letter describes a technique for measuring the ion current at a semiconductor wafer that is undergoing plasma processing. The technique relies on external measurements of the radio-frequency (rf) current and voltage at the wafer electrode. The rf signals are generated by the rf bias power which is normally applied to wafers during processing. There is no need for any probe inserted into the plasma or for any additional power supplies which might perturb the plasma. To test the technique, comparisons were made with dc measurements of ion current at a bare aluminum electrode, for argon discharges at 1.33 Pa, ion current densities of 1.3–13 mA/cm2, rf bias frequencies of 0.1–10 MHz, and rf bias voltages from 1 to 200 V. Additional tests showed that ion current measurements could be obtained by the rf technique even when electrically insulating wafers were placed on the electrode and when an insulating layer was deposited on the electrode.
    Materialart: Digitale Medien
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  • 2
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 638-640 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Thermally grown silicon nitride layers ≤30 A(ring) thick have been investigated as interfacial layers in silicon Schottky barrier structures. Current-voltage characteristics of these devices show modified barrier heights with near unity ideality factors, more ideal than those obtained using silicon dioxide films of the same thickness. By appropriate choice of metal or of nitride layer thickness barrier heights in any desired range can be produced. Barrier heights of different metals are "unpinned'': they differ by a fixed constant, independent of the thickness, indicating that interface trap states are not present in sufficient quantity to affect the barrier height. The barrier height varies roughly linearly with nitride thickness, for both as-grown and etched films, suggesting the presence of a constant quantity of positive fixed charge located at the silicon-silicon nitride interface.
    Materialart: Digitale Medien
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  • 3
    ISSN: 1089-7623
    Quelle: AIP Digital Archive
    Thema: Physik , Elektrotechnik, Elektronik, Nachrichtentechnik
    Notizen: A "reference cell'' for generating radio-frequency (rf) glow discharges in gases at a frequency of 13.56 MHz is described. The reference cell provides an experimental platform for comparing plasma measurements carried out in a common reactor geometry by different experimental groups, thereby enhancing the transfer of knowledge and insight gained in rf discharge studies. The results of performing ostensibly identical measurements on six of these cells in five different laboratories are analyzed and discussed. Measurements were made of plasma voltage and current characteristics for discharges in pure argon at specified values of applied voltages, gas pressures, and gas flow rates. Data are presented on relevant electrical quantities derived from Fourier analysis of the voltage and current wave forms. Amplitudes, phase shifts, self-bias voltages, and power dissipation were measured. Each of the cells was characterized in terms of its measured internal reactive components. Comparing results from different cells provides an indication of the degree of precision needed to define the electrical configuration and operating parameters in order to achieve identical performance at various laboratories. The results show, for example, that the external circuit, including the reactive components of the rf power source, can significantly influence the discharge. Results obtained in reference cells with identical rf power sources demonstrate that considerable progress has been made in developing a phenomenological understanding of the conditions needed to obtain reproducible discharge conditions in independent reference cells.
    Materialart: Digitale Medien
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  • 4
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1049-1051 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The ion current and sheath impedance were measured at the radio-frequency-powered electrode of an asymmetric, capacitively coupled plasma reactor, for discharges in argon at 1.33–133 Pa. The measurements were used to test the models of the radio frequency sheath derived by Lieberman [IEEE Trans. Plasma Sci. 17, 338 (1989)] and Godyak and Sternberg [Phys. Rev. A 42, 2299 (1990)], and establish the range of pressure and sheath voltage in which they are valid. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
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