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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6382-6384 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spin dependent tunnel junctions were fabricated on top of buried word lines. This was achieved modifying an existent 1.2 μm complementary metal–oxide–semiconductor backend metalization process. The word lines are 0.2 μm thick and 4 μm wide. Roughness over the buried line was decreased to 0.2 nm (rms), performing a spin-on-glass local planarization step. Tunnel junctions with 9–13 Å plasma oxidized Al barriers were patterned on top of the word line with different aspect ratios from 3×2 μm2 to 7×1 μm2 areas. Magnetoresistance values reach over 20% for top free electrode configurations. In this inverted structure the magnetization of the free electrode can be fully reversed with the field from word line. The word line creates a field of 0.7 Oe per mA. Applying simultaneously two perpendicular fields reduces the threshold for magnetization switching. The fabricated structure can be used to assess the junction switching mechanism for tunnel junction magnetic random access memories. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5258-5260 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature and annealing effects on junctions with high (10–13 MΩ μm2) and low (25–30 kΩ μm2) resistance-area products were studied. Junction tunneling magnetoresistance (TMR) is almost unchanged and above 20% up to 200 °C. A sharp and reversible TMR decrease is observed between 200 and 220 °C and is due to the exchange loss in the pinning layer. Junction TMR increases from 22% to 26% in high resistance-area product samples (resistance decreases a factor of 2), and from 22% to 37% (resistance increases 30%) in low resistance-area product samples, upon anneal up to 200–230 °C. Rutherford backscattering (RBS) analysis of the oxygen distribution in as-deposited samples indicates oxygen asymmetry in the barrier. This asymmetry and asymmetry in barrier parameters, found in as-deposited samples, disappear after anneal at 200 °C. Two regimes for the TMR dependence on anneal are proposed. The first up to 200 °C, where TMR increases, as barrier is homogenized and polarization near the top electrode increases. The second, above 200 °C in low-resistance junctions, where TMR increase is related with barrier height increase. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper, spin-dependent tunnel junctions fabricated by shadow mask (junction area 0.25 mm2) and by lithography (junction area down to 9×2 μm2) were studied. The junctions have NiFe and CoFe electrodes and the insulating barrier Al2O3 is formed by depositing a 10–30 Å thick Al layer, followed by a 1–3 min plasma oxidation in an O2 atmosphere. The mm2-size junctions show tunneling magnetoresistances (TMR) of 10%–13.5% at room temperature (RT), with 50% decrease in TMR for a bias voltage of 220 mV. The junction resistances range from hundreds of Ω to tens of kΩ. The analysis of current distribution indicates that no geometrically enhanced magnetoresistance occurs in the cross-shaped mm2-size junctions when the measured junction resistance is five times larger than the electrode resistance over junction area. The μm2-size junctions show TMR of 17%–24% at RT, independent of the junction area, and have a resistance between 90 kΩ and 1 MΩ for the 9×2 μm2 size (resistance-area products of ∼3 MΩ×μm2). The μm2-size junctions show 50% decrease in TMR for a bias voltage of 430 mV, and high sensitivity (〉20%/Oe). © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3288-3290 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spin tunnel junctions with tunneling magnetoresistance of 36.5%±0.5%, resistance-area product of 35±6 kΩ×μm2, and junction area between 6 and 75 μm2 were fabricated. The barrier height is 2.5±0.3 eV and the barrier thickness is 7.7±0.3 Å. Large tunneling magnetoresistance (TMR) values are obtained by vacuum anneal (at temperatures from 100 to 240 °C for over 5 h) of junctions prepared with as-deposited TMR of 21%±1.7%, and an as-deposited resistance-area product of 25±6 kΩ×μm2. Two regimes occur during anneal. The first one occurs for anneals up to 200 °C where TMR and junction resistance increase, but the barrier parameters are unaltered. The second occurs above 200 °C, where TMR increases faster, together with an increase in barrier height. At 240 °C, TMR starts to decrease. Rutherford backscattering analysis indicates an asymmetry in the oxygen distribution in the as-deposited barrier. The oxygen distribution becomes homogeneous for anneals above 150 °C. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3893-3895 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work demonstrates integration of magnetic tunneling junctions with hydrogenated amorphous silicon (a-Si:H) diodes. In the finished device 11.4% current change is measured when the junction free layer is switched in an external magnetic field, for 0.86 V applied to the junction-diode series. In the integrated device, the measured individual tunneling magnetoresistance signal is 25.3% at 7 mV bias, demonstrating junction robustness and process compatibility. The junction-diode series is necessary for bit selectivity in magnetic random access memories. Vertical growth of these devices may allow higher density architectures. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [s.l.] : Nature Publishing Group
    Nature 279 (1979), S. 803-804 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The inhibition of sodium transport was mainly studied in frog skin, but similar results were obtained in toad bladder. Short circuit current (SCC) was taken as a measure of net sodium flux4'5. Addition of sodium metavanadate, NaVO3, with V in the +5 oxidised state, to the solution bathing the ...
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1432-2013
    Keywords: Frog skin ; Sodium transport ; Oxygen consumption ; Catecholamines ; Vasopressin
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary Experiments were designed to compare the effects of two hormones-vasopressin and norepinephrine-on the energetics of Na transport in frog skin. Simultaneous measurements of O2 consumption and net Na flux were performed in the same skins by means of O2 cathodes and the short circuit current technique. The results showed that both hormones induced similar increments in Na transport. In contrast, there was a conspicuous difference in O2 consumption values, norepinephrine having a very small stimulatory effect compared to the one induced by vasopressin. Thus, despite the fact that both hormones increase Na permeability of frog skin by similar mechanisms and to a similar extent, they appear to exert very different effects on cell metabolism.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    The journal of membrane biology 40 (1978), S. 77-94 
    ISSN: 1432-1424
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology
    Notes: Summary To determine if harmala alkaloids affect transport systems other than (Na +K)-ATPase, effects of harmaline on Na and water fluxes were studied in amphibian skins. Net Na flux was evaluated from short-circuit current, and water flux monitored with automatic, volumetric methods. At 2 to 5mm, harmaline consistently inhibited SCC and prevented the natriferic effects of oxytocin and norepinephrine. However, at 0.1 to 0.5mm, harmaline produced an increase in SCC inhibitable with amiloride. The stimulatory effects of harmaline and oxytocin were either nonadditive or additive depending on whether the hallucinogen was present in the inner solution or in the outer solution bathing the skin, respectively. Water flow was not modified by harmaline on the outer medium. In contrast, addition of the drug to the inner medium elicited a conspicuous, sustained, vasopressin-like, hydrosmotic effect, comparable to and competitive with those of vasopressin and norepinephrine. The ensemble of these results suggests that harmaline may affect three distinct transport systems: (i) the Na pump; (ii) the cyclic nucleotide system; (iii) the Na entry pathway at the outer membrane of the skin that is also activated by agents such as diphenylhydantoin, lanthanides and propranolol.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    The journal of membrane biology 23 (1975), S. 139-156 
    ISSN: 1432-1424
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology
    Notes: Summary Scanning electron-microscopy (SEM) was used to investigate the hydrosmotic effect of vasopressin on the apical surface of urinary bladders of toadsBufo marinus. Bladders were mounted on glass chambers and water fluxes were monitored with an optical method. Tissues were fixed in 2% glutaraldehyde and processed for SEM. Three types of cells were seen on the surface of control bladders: large polygonal (granular) cells, with blunt microvilli; smaller (mitochondria-rich) cells, with longer microvilli; goblet cells. Neither exposure of the bladders to a large osmotic gradient nor exposure to vasopressin in the absence of a gradient altered appreciably the epithelial surface. In contrast, the combination of vasopressin and an osmotic gradient resulted in a conspicuous diminution of the blunt microvilli. However, the small cells with longer microvilli remained unchanged. Identical results were seen with cAMP or theophylline in the presence of an osmotic gradient. These findings suggest that the hydrosmotic effect of vasopressin is mainly exerted on the granular cells of toad bladder and confirm observations made by others with the electron-microscope.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    The journal of membrane biology 46 (1979), S. 155-169 
    ISSN: 1432-1424
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology
    Notes: Summary Effects of amiloride analogues on Na transport were studied in isolated skins of the frogRana ridibunda. The pattern of structure-activity relationship of these compounds showed that both the −NH2 group at position 5 and Cl at position 6 of the pyrazine ring of the amiloride molecule were important for their biological activity. The paramount role of the groups at position 5 was further demonstrated by the striking properties of an analogue resulting from dimethylation of that −NH2 group. A stimulation of Na transport, opposite to the effect of amiloride itself, was observed in this instance. The increase in Na transport could already be seen at 10−6 m and was equivalent to the measured increase in Na influx, reversible, dose-dependent, and additive to the natriferic action of oxytocin. Such characteristics resemble those reported with “external” agents like propranolol and La3+. Furthermore, mutual inhibition was observed between the stimulatory effects of this analogue and those of propranolol or La3+. These results suggest that the analogue may be considered as another “external” agent acting at sites of the external membrane distinct from those activated by cAMP but similar to the Ca sites described by Herrera and Curran (Herrera, F.C., Curran, P.F. 1963.J. Gen. Physiol. 46:999).
    Type of Medium: Electronic Resource
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