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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6378-6380 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multilayers of Cu10 A(ring)/(Co10 A(ring)/Cu10 A(ring))n, where n is the number of bilayers, shows a nonlinear increase of magnetoresistance ratio (MR%) with increasing n. For each value of n the resistivity decreases with applied field. MR values at 4.2 K are less than 2% for n≤16 but increase to 38% at n=128. Conduction electron mean free paths (l), calculated from film resistivity as a function of total film thickness, increase from l=150 to 470 A(ring) when the applied magnetic field changes from zero to 18 kOe. The values obtained for l indicate that for n≤16 MR is reduced by diffuse surface scattering while for n≥16 MR surface scattering is less important and the Co atomic moment ordering is the most important factor. About half the decrease in resistivity with field is associated with the final 2% increase in magnetization for fields above 5 kOe which we interpret in terms of Co interface disorder.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6112-6114 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of (U-As)100−xCox alloys are prepared by magnetron sputtering over the entire composition range x and the polar Kerr rotation and magnetization are measured. The absolute value of the maximum Kerr rotation decreases rapidly from −0.48° for Co (x=100) to −0.09° for x=66 at 300 K. A similar decrease is observed at 10 K but at a slightly slower rate. The Kerr rotation as well as the magnetization are negligible at x(approximately-equal-to)50, indicating a suppression of the magnetic moments in Co and U, simultaneously. This result is explained in terms of filling in the Co 3d conduction band. At x≤30, U develops a magnetic moment at 10 K but Co does not seem to contribute to the magnetization for these compositions.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4734-4737 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We find that sandwich films of the form Co50 A(ring)/Cu (t)/Co50 A(ring) with a CoO overlayer have large negative magnetoresistance [(MR)—up to 15% at T=4.2 K] for Cu thickness t(approximately-greater-than)10 A(ring). The MR correlates with a plateau in the magnetization curve which indicates antiparallel magnetization directions of the Co layers as caused by exchange coupling from the antiferromagnetic CoO overlayer. The addition of Co layers 2 or 4 A(ring) thick inserted midway in the Cu spacer can increase or decrease the MR depending on Cu spacer thickness. When comparing sandwich films with and without the insert layer, MR agrees in magnitude if 1/2 the total Cu thickness is used for the insert film. This means that it is only necessary to have a 2 or 4 A(ring) Co layer to scatter spin polarized electrons and implies that interface scattering at a boundary between Co and Cu may dominate over bulk scattering. For films with or without Co insert layers, a metallic Cu overlayer of 20 A(ring) thickness, causes the magnetization plateau to disappear and reduces the MR to less than 1%.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6537-6539 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Giant magnetoresistance (GMR) of 8% at 4.2 K is found in sandwich films having the composition Ni0.7Co0.3(50 A(ring))/Cu(t)/NiCo(50 A(ring))/NiCoO(40 A(ring)) where NiCoO is a mixed oxide overlayer that exchange couples with the NiCo alloy layer. These films show a MR temperature dependence quite similar to that previously reported for Co/Cu/Co/CoO where the MR becomes small above 200 K. When bilayers of CoO/NiO are placed on the NiCo layer, the temperature dependence of MR extends to 250 K. The magnitude of the MR at 4.2 K scales with the magnitude of the saturation magnetization in the NiCo and Co films.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6480-6482 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spin-valve structures, glass/NiFeI/Cu/NiFeII/a-TbCo/Cu, were prepared where the pinned Permalloy layer is exchanged biased by a 200 to 400 A(ring) thick a-Tb0.23Co0.77 layer. Exchange fields between 50 and 250 Oe were achieved with TbCo thicknesses below 400 A(ring), for a pinned Permalloy layer 150 A(ring) thick. The exchange fields are strongly dependent on substrate bias. The magnetoresistance of these structures reaches 4.5% when thin Co layers are added at the NiFe/Cu interfaces.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: NiFe/oxide/Co junctions were fabricated by magnetron sputtering for studies of polarized electron transport across the insulating barrier. Al2O3, Al-Al2O3, and MgO insulating barriers were prepared with junction resistances from 0.5 to 116 Ω. The I-V characteristics at room temperature are linear. For low barrier resistance, the magnetoresistance of the structure is dominated by the anisotropic magnetoresistance of the ferromagnetic electrodes. For the higher barrier resistances, a different magnetoresistance effect is observed, which is tentatively related to tunneling or spin-valve effects across the insulating junction.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6601-6603 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multilayer films of [Co 10 A(ring)/Cu(t)]64 with copper thicknesses from t=10 to 29 A(ring) annealed for 1 h at temperatures about 350 °C showed a decrease in sample resistivity at 4.2 K. The giant magnetoresistance (GMR) maximums for as-deposited films at t=10 A(ring) and t=23 A(ring) shifted with annealing. The GMR decreased for t=10 A(ring) and t=23 A(ring) but increased for t=19 A(ring) and t=29 A(ring) indicating a complex behavior with annealing. Similarities with granular films are discussed.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5541-5541 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The enhanced magnetoresistance (MR), also called "spin valve,'' found by Speriosu et al.1 in sandwich layers of the form Co(50 A(ring))/Cu(t)/Co(50) has been modified by addition of Co 2 and 4 A(ring) insert layers midway in the Cu(t) layer of thickness t. The insert was suggested by Slonczewski2 as a method to influence the exchange coupling between the Co layers. In addition, we have also studied the effect of Cu overlayers on the MR and magnetic properties. The films are prepared by computer controlled magnetron sputtering from Co and Cu targets with Cu(t) varied from 20 to 36 A(ring). For MR values above 1% there is a pronounced plateau and hysteresis in the magnetization (M) versus applied field (H) curve and a corresponding plateau and hysteresis in MR versus H. The effect of the Co insert layers on MR is dependent on the Co insert thickness and also the Cu thickness. For example, for Co(x) in Co(50 A(ring))/Cu(18)/Co(x)/Cu(18)/Co(50) there is an increase in MR of 11%–14% for x=0–4 A(ring). In contrast, Co(50 A(ring))/Cu(14)/Co(x)/Cu(14)/Co(50) showed a decrease of 14%–6% for x=0–4 A(ring). Measurement of the MR temperature dependence for Co(50 A(ring))/Cu(28)/Co(50) showed a Brillouin-like decrease going from 14% at 4.2 K to less than 1% at 185 K. Another method to cause large changes in MR for the sandwich structures, either with or without the Co insert layer, is the addition of an overlayer of Cu of 10 or 20 A(ring). For the 10 A(ring) overlay, there is up to a 50% decrease in the extent of the plateau as well as MR; for the 20 A(ring) Cu both the plateau and MR have been reduced to almost zero. At this time, we cannot fully interpret the Cu overlay mechanism but its understanding should lead to improved control over the properties.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4901-4903 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: U100−x−ySbxMny amorphous ferromagnets were prepared that have an anisotropic magnetoresistance (AMR) as high as 9.3% at 15 K and a 2-T field. This is a striking result, since the AMR of typical amorphous ferromagnets does not exceed 1%. These materials are random anisotropy ferromagnets, with large coercive fields (Hc =1.2 T, 15 K) following a thermally activated regime at low temperature. The Curie temperatures range from 95 to 112 K. Resistivity values vary from 200 to 400 μΩ cm and the Hall angle can reach 20° at 15 K. For T〉TC, the resistivity follows a field-independent ln T behavior with dρ/dT showing a sharp anomaly at TC. Below TC, both these quantities are strongly anisotropic, depending on the angle between the magnetization and the current. Magnetization reversal process are inferred from the magnetoresistance hysteresis cycles—both coherent rotation and 180° domain-wall motion occur.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4532-4534 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gd-Y-Gd multilayers were prepared that show a magnetoresistance enhancement for an Y layer separation of 30 A(ring). This magnetoresistance enhancement is an interface effect and occurs in samples where some degree of antiferromagnetic coupling is present.
    Type of Medium: Electronic Resource
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