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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Analytical chemistry 37 (1965), S. 486-489 
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Analytical chemistry 37 (1965), S. 490-495 
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 43 (1978), S. 0 
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: A nutritional evaluation was carried out on corn or sorghum blended with soy or cottonseed and processed using a Brady Crop Cooker. Protein efficiency ratios (PER's) and levels of antitrypsin activity and free or bound gossypol were determined. The extrusion process inactivated 52% of antitrypsin activity and resulted in a full-fat soy flour with corrected PER of 2.0 (casein = 2.5). The PER's for extruded corn-soy blends (CSB) were comparable to casein. Extrusion reduced free gossypol 68% and yielded a corrected PER for glanded cottonseed for 1.9. However, the PER's of extruded cereal-cottonseed blends were significantly inferior to CSB, especially at higher extrusion temperatures. The results suggest the utility of this extrusion system in producing low-cost nutritious blended foods for use in supplemental feeding programs.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 56 (1991), S. 0 
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: A fractional factorial experiment of a 34 second order orthogonal design was used to study properties of extrusion processed corn/soybean (70/30%, w/w) mixtures in presence of thermostable α-amylase. The viscosity of gruels made from extrudates of corn/soybean mixtures with no added α-amylase was more than 1000-fold higher than that of products extruded with added enzyme. Changes in viscosity and water solubility and absorption indices of slurries from extrudates made under different conditions, indicated enzymatic starch hydrolysis was increased in the extruder when a-amylase was included. The results should be useful in selecting extrusion conditions to yield low viscosity-high nutrient density gruels from extruded products.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 6409-6415 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of C54 TiSi2 using Ti–Nb alloys deposited on polycrystalline Si substrates was studied by means of in situ x-ray diffraction and resistance measurements during temperature ramping. Alloys with Nb contents ranging from 0 to 13.6 at. % were used. The formation temperature of C54 TiSi2 was reduced in the presence of Nb. However, the addition of Nb in Ti did not cause fundamental changes in the evolution of resistance versus temperature. This latter observation suggests that the mechanism for the formation of C54 TiSi2 remained the same in spite of the enhancement effect. For alloys with up to 8 at. % of Nb, the C49 TiSi2 phase formed first, as with pure Ti. When annealing the alloy with 13.6 at. % Nb, neither C49 TiSi2 nor C54 were found in the usual temperature ranges, instead, C40 (Nb,Ti)Si2 was observed. This phase transformed to C54 (Nb,Ti)Si2 above 950 °C. The apparent activation energy associated with the formation of C54 TiSi2 was obtained by annealing the samples at four different ramp rates from 3 to 27 K/s; it decreased continuously from 3.8 to 2.5 eV with increasing Nb content from 0 to 8 at. %. The apparent activation energy for the formation of C40 (Nb,Ti)Si2 was found to be 2.6 eV. The possible physical meaning, or lack thereof, of the high activation energies derived from experimental measurements is extensively discussed. A qualitative model is proposed whereby nucleation would be rate controlling in pure TiSi2, and interface motion in samples with 8 at. % Nb. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Materials Research 13 (1983), S. 413-439 
    ISSN: 0084-6600
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that depositing Ta diffusion barriers under ultra-high vacuum conditions without in situ oxygen dosing allows for variations both in microstructure and in the concentration of chemical impurities that severely degrade barrier performance. The effects of deposition pressure, in situ oxygen dosing at interfaces, hydrogen and oxygen contamination, and microstructure on diffusion barrier performance to Cu diffusion for electron-beam deposited Ta are presented. 20 nm of Ta diffusion barrier followed by a 150 nm Cu conductor were deposited under ultra-high vacuum (UHV, deposition pressure of 1×10−9 to 5 ×10−8 Torr) and high vacuum (HV, deposition pressure of 1×10−7 to 5×10−6 Torr) conditions onto 〈100〉 Si. In situ resistance furnace measurements, Auger compositional depth profiling, secondary ion mass spectrometry, and forward recoil detection along with scanning and transmission electron microscopy were used to determine the electrical, chemical, and structural changes that occurred in thin-film Ta diffusion barriers upon annealing. Undosed HV deposited Ta barriers failed from 560 to 630 °C, while undosed UHV barriers failed from 310 to 630 °C. For UHV Ta barriers, in situ oxygen dosing during deposition at the Cu/Ta interface increased the failure temperatures by 30–250 °C and decreased the range of failure temperatures to 570–630 °C. Undosed UHV Ta barriers have no systematic relationship between failure temperature and deposition pressure, although correlations between breakdown temperature, oxygen and hydrogen concentrations, and microstructural variations were measured.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Materials Research 30 (2000), S. 523-543 
    ISSN: 0084-6600
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Three methods have recently been developed to enhance the formation of the low-resistivity C54 phase of TiSi2, the most widely used silicide contact in ultra-large-scale integration devices. These methods are (a) ion implantation of a transition metal into the Si before Ti deposition; (b) deposition of a thin transition metal interlayer between the Si and Ti; and (c) codeposition of Ti alloyed with a transition metal. Each of these methods decreases the C49-to-C54 transformation temperature by 〉100oC and improves the probability of phase formation in narrow lines by increasing the nucleation site density. In this paper, we identify the aspects of phase formation that are shared by these three methods, review the methodology by which they were developed, and summarize the applications to silicon devices. Mechanisms that are responsible for the enhanced formation of C54 TiSi2 are reviewed, based on a combination of temperature-controlled in situ measurements of resistance, X-ray diffraction, and optical scattering, coupled with ex situ studies of phase formation and morphology. The main mechanisms are identified as enhanced nucleation of the C54 phase by a reduction of grain size in the C49 phase and the creation of crystallographic templates of the C40 disilicide phase and the metal-rich Ti5Si3 phase.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5161-5170 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ resistance measurements, x-ray diffraction, Rutherford backscattering spectrometry, transmission electron microscopy, isothermal and constant heating rate differential scanning calorimetry and Auger electron spectrometry depth profiles have been used to investigate the interactions in copper and magnesium thin films leading to the growth of Cu2Mg and CuMg2 intermetallics. The effect of exposing the reacting interfaces to controlled exposure of oxygen on the nucleation and growth kinetics of such intermetallics was also investigated. It is found that the first phase to form is CuMg2, at about 200–215 °C. It is determined that the formation of CuMg2 occurs by a two step process consisting of nucleation and growth. The nucleation of CuMg2 takes place in a region composed of a Cu/Mg solid solution. The nuclei form at certain preferred sites and grow in directions both parallel and perpendicular to the surface, eventually leading to a continuous CuMg2 layer. The growth of CuMg2 nuclei in the plane of the original interface occurs at a constant rate, whereas the growth in a direction perpendicular to the original interface is found to be diffusion limited. In the presence of excess copper Cu2Mg forms at higher temperatures, with complete conversion to Cu2Mg occurring at about 380 °C. When the Cu surface is dosed with oxygen prior to Mg deposition, ramp rate differential scanning calorimetry (DSC) shows that the nucleation and growth of CuMg2 as well as the growth of Cu2Mg are not disturbed. Dosing the Mg surface with oxygen results in significant changes in the growth of the two phases. In this case a thin MgO layer is formed at the oxygen dosed surface, lateral growth of CuMg2 is unaffected, but vertical growth of CuMg2 across the oxygen dosed interfaces is delayed by 25–30 °C. The growth of Cu2Mg is also shown to be delayed, by 22–54 °C due to the interfacial oxygen dose.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4319-4326 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that dramatically different in-plane textures can be produced in body centered cubic (bcc) metal thin films deposited on amorphous substrates under different deposition conditions. The crystallographic orientation distribution of polycrystalline bcc metal thin films on amorphous substrates often has a strong 〈110〉 fiber texture, indicating that {110} planes are parallel to the substrate plane. When deposition takes place under bombardment by energetic ions or atoms at an off-normal angle of incidence, the 〈110〉 fiber texture develops an in-plane texture, indicating nonrandom azimuthal orientations of the crystallites. Three orientations in Nb films have been observed under different deposition geometries, in which the energetic particle flux coincides with channeling directions in the bcc crystal structure. In-plane orientations in Mo films have also been obtained in magnetron sputtering systems with various configurations. These are described, and an example is given in which the in-plane orientation of Mo films deposited in two different in-line magnetron sputtering systems differs by a 90° rotation. In these two cases, there is a strong 〈110〉 fiber texture, but the in-plane 〈100〉 direction is oriented parallel to the scan direction in one system, and perpendicular to the scan direction in the other system. The conditions which produce such different in-plane textures in two apparently similar sputtering systems are discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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