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  • 1
    Electronic Resource
    Electronic Resource
    Effects of annealing InP(110) surfaces on Schottky barrier heights at Pd/InP(110) interfaces (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 314-317 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The InP(110) surface becomes phosphorus deficient with increasing annealing temperature up to 200 °C and recovers nearly the initial stoichiometry at about 350 °C. The Schottky barrier heights formed on these annealed surfaces using Pd show a good correlation with the phosphorus loss from the surface due to annealing. This band-bending study using photoemission spectroscopy suggests the following: (i) Annealing creates donor defects due to phosphorus loss from the surface with a level at about 0.6 eV above the valence-band maximum (VBM); (ii) Pd deposition on InP(110) creates some other defects at around 0.9 eV above the VBM as usual; (iii) the surface Fermi-level positions ranging from 0.62 to 0.9 eV above the VBM are determined by the balance of these interface defect-state densities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350708
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  • 2
    Electronic Resource
    Electronic Resource
    Large Schottky barrier heights on n-InP−A novel approach (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2701-2703 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An unusually high Schottky barrier height (SBH) of 0.82 eV has been observed at Au/n-InP(110) interfaces with one monolayer of Sb as an interlayer using photoemission techniques. For Au deposited on clean cleaved InP(110), Au-In alloying that occurs with increasing Au coverage destroys interfacial perfection. The resulting Fermi level position lies ∼ 0.5 eV below the conduction band minimum, as is common for metal interfaces with clean cleaved InP. However, for InP surfaces first passivated with one monolayer of Sb, this Au–In alloying is completely inhibited. An abrupt interface results in an increased possibility of a low interface defect density. This represents a possible way to control of SBH and produces high SBH for n-InP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104788
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of annealing Sb/InP(110) interfaces and Schottky barrier formation of Ag on annealed Sb/InP(110) surfaces (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2243-2245 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of annealing one monolayer of Sb on p-InP on the surface Fermi level position and the band bending due to Ag deposition on these well-ordered surfaces have been studied using photoemission spectroscopy. The adsorption of one monolayer of Sb on p-InP gives a Fermi level position 0.85 eV above the valence band maximum (VBM). However, with increasing annealing temperature, the band bending decreases and recovers to nearly the flatband condition above 200 °C. The Fermi level movement of annealed InP shows a correlation with the surface stoichiometry of phosphorus and indium. Ag deposition on these annealed Sb/p-InP interfaces gives an anomalously low band bending of 0.5 eV above the VBM.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104939
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  • 4
    Electronic Resource
    Electronic Resource
    One monolayer of Sb or Bi used as a buffer layer preventing oxidation of InP (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1413-1415 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: One monolayer of Sb or Bi has been used as a buffer layer to protect InP surfaces against the oxidation. We have used photoemission spectroscopy to estimate the oxide fraction of In and the surface Fermi level position. We find that one monolayer of Sb or Bi reduces the oxidation of underlying InP at least by more than two orders of magnitude. For passivated surfaces with one monolayer of Sb or Bi, the surface Fermi level remains pinned at the conventional pinning level 0.45 eV below the conduction-band minimum (CBM) even for oxygen exposures above 1×107 L, whereas without the Sb or Bi overlayers, the surface Fermi level is near the CBM for the same O2 exposure. Core-level studies indicate that the Sb or Bi overlayer must be itself oxidized before there is strong oxidation of the InP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105183
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Fermi level movement at the Cs/GaAs (110) interfaces (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1250-1252 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fermi level (Ef ) movement and overlayer metallization at room temperature (RT) and 110 K low-temperature (LT) Cs/GaAs (110) interfaces are studied using photoemission. Initial p-type GaAs band bending is attributed to the surface donor states that originate from Cs atom chemisorption. The Ef stabilization at RT and LT is interpreted in terms of defects and the metal-induced gap states and the interplay between them. For the latter to dominate, fewer defects and establishment of overlayer metallicity are necessary.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100730
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  • 6
    Electronic Resource
    Electronic Resource
    Thermal stability of Schottky barriers at Au and Ag/InP(110) interfaces with Sb interlayers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3121-3123 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky barriers at Au and Ag/InP(110) interfaces with Sb interlayers show an unusually low Fermi level pinning position of about 0.52 eV above the valence-band maximum (VBM) at room temperature using photoemission spectroscopy. Thermal stability of these interfaces have been first studied. Strong clustering is observed by annealing these interfaces, suggesting less reaction between overlayers and substrates. Change in Fermi level positions due to annealing is 〈0.1 eV up to 300 °C at these interfaces including measurement errors. However, segregation of In atoms into the Ag overlayer is observed above 300 °C for 10 min at Ag/Sb/InP interfaces, and a small pinned component with a level 0.9 eV above the VBM appears above 200 °C for 10 min at Au/Sb/InP interfaces. These Schottky barriers are stable up to at least 200 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105758
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