Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
59 (1991), S. 3121-3123
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
Schottky barriers at Au and Ag/InP(110) interfaces with Sb interlayers show an unusually low Fermi level pinning position of about 0.52 eV above the valence-band maximum (VBM) at room temperature using photoemission spectroscopy. Thermal stability of these interfaces have been first studied. Strong clustering is observed by annealing these interfaces, suggesting less reaction between overlayers and substrates. Change in Fermi level positions due to annealing is 〈0.1 eV up to 300 °C at these interfaces including measurement errors. However, segregation of In atoms into the Ag overlayer is observed above 300 °C for 10 min at Ag/Sb/InP interfaces, and a small pinned component with a level 0.9 eV above the VBM appears above 200 °C for 10 min at Au/Sb/InP interfaces. These Schottky barriers are stable up to at least 200 °C.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.105758
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