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  • 1
    Electronic Resource
    Electronic Resource
    Temperature and composition dependence of the energy gap in Cd1−xFexSe (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3937-3939 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Wavelength modulated reflectivity spectra near the fundamental absorption edge of Cd1−xFexSe (0.01≤x≤0.07) solid solutions have been measured in the temperature range 8–300 K. A line-shape analysis of the structures observed allows us to determine the temperature and composition dependence of interband transition energies. The energy gap varies linearly with composition in the range studied. The temperature variation of the energy gap can be well fitted by the empirical Varshni relation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349203
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  • 2
    Electronic Resource
    Electronic Resource
    Photoconductivity studies in Cd1−xFexSe (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1479-1483 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoconductivity of the diluted magnetic semiconductors Cd1−xFexSe (0.01≤x≤0.07) has been measured at temperatures between 1.6 and 4.2 K in a magnetic field up to 5 T. Below the band-gap energy, the photoionization of Fe+2 (3d6) centers is responsible for the observed photocurrent. Near the band-gap energy the photocurrent spectra are interpreted in terms of free-exciton (exciton A and B) dissociation. As the magnetic field intensity is increased the photocurrent peaks shift towards lower energies. The observed red shift is larger for samples with higher Fe content. The large exchange interaction in the materials studied is responsible for the shift; their measured values allow us to estimate the exchange integrals for the Cd1−xFexSe valence band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347235
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  • 3
    Electronic Resource
    Electronic Resource
    Resistivity of RMn12−xFex alloys (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5632-5636 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical resistivity of RMn12−xFex (R=Er,Ho) polycrystalline system with x=0, 4, 5, and 6 was measured over the temperature range of 4 to 300 K. The resistivity increases sharply near the Néel temperature TN for x=4, 5, and 6 which, according to existing theories, can be ascribed to the formation of superzone gaps. Then, the resistivity increase should be proportional to the staggered magnetization m′ below TN, whereas we find experimentally that it is quadratic in m′. Thermal smearing of the gaps can lead to such a dependence. There is no evidence for superzone effects in x=0 compounds. A combination of spin disorder, phonon, and impurity scattering gives a good account for the experimental data. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1413496
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  • 4
    Electronic Resource
    Electronic Resource
    Exchange interaction constants in CdCoSe diluted magnetic semiconductors (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4628-4631 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoconductivity of diluted magnetic semiconductors Cd1−xCoxSe (0.011≤x≤0.041) has been measured at temperature of 1.6 K and in a magnetic field up to 6 T. The photocurrent spectra show two peaks near the band-gap energy. They shift towards lower energies as the magnetic field intensity is increased. We interpret these lines in terms of free-exciton (exciton A and B) dissociation. The large values of the observed shift arise from exchange interactions. A comparision of this shift with magnetization measurements done on the same samples allows us to estimate the exchange integrals for the CdCoSe system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355911
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  • 5
    Electronic Resource
    Electronic Resource
    Electroreflectance and wavelength-modulated reflectivity spectra of Zn1−xMnxSe alloys (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3300-3302 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-field electroreflectance (ER) and wavelength-modulated reflectivity (WMR) spectra have been obtained on Zn1−x Mnx Se single crystals in the whole range of composition, 0≤x≤0.57. An analysis of the ER data enabled us to determine the dependence of the fundamental energy gap on temperature (8 K≤T≤300 K) and Mn molar fraction x. In samples with x≥0.35, which crystallize in a wurtzite structure, two or three temperature-dependent features are observed in WMR spectra and in some ER spectra. We identify these peaks with the ground-state excitons for different valence bands in hexagonal Zn1−x Mnx Se. The observed crystal-field splitting is ∼20 meV for x=0.39 and decreases with increasing Mn content.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340817
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  • 6
    Electronic Resource
    Electronic Resource
    Electroreflectance and wavelength-modulated reflectivity measurements of Zn1−xMnxTe mixed crystals (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6815-6818 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electroreflectance and wavelength-modulated reflectivity data near the fundamental absorption edge of Zn1−xMnxTe solid solutions are presented as a function of temperature and Mn content. From these data the dependence of the energy gap on temperature and composition was determined. The broadening of electroreflectance and wavelength-modulated reflectivity structures is found to depend linearly on [x(1−x)]2 at low temperatures. This indicates that the broadening is produced primarily by the random distribution of Mn and Zn atoms in the lattice.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341995
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