Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
77 (1995), S. 4463-4466
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Hot carrier transport processes in GaAs with δ-like high Si doping have been investigated. In the high electric field region the current density decays with time by as much as 20%, an indication of electron trapping. The electron traps are metastable and the electrons can be released by light or thermal excitation. DX− centers can explain the observations, however, other types of localized electron states cannot be unambiguously excluded. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.359476
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