ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract Samples of gallium arsenide from liquid encapsulated Czochralski grown ingots, doped with either tellurium or selenium to carrier concentrations ∼ 1018 cm−3 revealed shallow pits (S-pits) by etching. Although the S-pits were randomly distributed throughout the matrix, areas of high densities were associated with dislocations. This observation was utilized to identify the types of defects which became S-pits when etched. Transmission electron microscope specimens of etched material were examined in the dislocation regions, and showed directly that faulted loops with Frank partials b=1/3a 0 〈111〉 containing precipitate particles could become S-pits. It was further deduced from the combined optical and electron microscope observations that both faulted {111} and unfaulted {110} dislocation loops became S-pits provided they contained precipitate partices.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00541816
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