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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 7918-7931 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: High-resolution (∼0.1 eV) Si 2p gas phase photoelectron spectra of the following twenty-three silicon compounds have been recorded: SiHXD4−X; Si(CH3)X(OCH3)4−X; Si(CH3)X[N(CH3)2]4−X; SiHX[Si(CH3)3]4−X (where x=0–4), and SiH3–CH3, SiH3–SiH3, SiH3–SiH2–SiH3, Si(CH3)3–Si(CH3)3, Ge[Si(CH3)3]4, and [Si(CH3)2]6. Vibrational fine structure has been resolved in the Si 2p spectra of the five SiHXD4−X (x=0–4) compounds, methyl silane (H3C–SiH3), disilane (H3Si–SiH3), and trisilane (SiH3–SiH2–SiH3). For the five mixed hydrogen/deuterium compounds and methyl silane, the Si 2p vibrational structure is determined by the totally symmetric Si–H, Si–D, or Si–C stretching vibrational mode. In contrast, the spectra of disilane and trisilane are dominated by the nontotally symmetric Si–H bending vibrations—the first example of this in core-level photoelectron spectroscopy. This unusual vibrational effect is interpreted in terms of vibronic coupling that results from core-hole localization in the ion states of molecules such as disilane and trisilane which have equivalent cores. In the remaining compounds the vibrational effects are not well resolved. However, the Si 2p peak widths increase in the order Si(CH3)4≤Si[Si(CH3)3]4≤Si[N(CH3)2]4≤Si(OCH3)4≤SiF4 showing that the size of the vibrational manifold increases in the same order. The Si 2p photoelectron spectra of the series SiHx[Si(CH3)3]4−x mimic the chemical shift effects of zero, one, two, and three hydrogens bonded to a silicon surface. Vibrational effects must now be considered for adsorbate systems such as H adsorbed on a silicon surface. The Si 2p spectra are also used to predict the overall C 1s linewidth of organic analogs in the gas phase and in polymers.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Synchrotron-based O 1s and N 1s photoabsorption spectroscopy, O 1s, N 1s, Si 2p, and valence-band photoelectron spectroscopy (PES), and medium energy ion scattering (MEIS) have been used to determine the composition and thickness of oxynitride films grown in N2O on a Si(100) surface. Core-level photoabsorption spectroscopy is shown to be a very sensitive probe capable of measuring surface coverages lower than 0.1 monolayers of N (6.5×1013 N atoms/cm2). Film composition was monitored as a function of growth to demonstrate the stoichiometry reversal from primarily N-terminated surfaces in thin films to nearly pure SiO2 in films thicker than ∼20 A(ring). A sample with a 60 A(ring) oxynitride film was depth profiled by etching in HF and was shown, via N 1s absorption spectroscopy, to have N segregation within 10 A(ring) above the Si/SiO2 interface. Core-level PES and MEIS were used to study the growth mechanisms of oxynitrides on Si(100) and these data were used to create a schematic phase diagram showing three distinct regions of oxide formation. A critical N2O pressure was discovered at which oxide growth proceeds at over 1000 times its normal rate. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3567-3571 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The chemisorption of bis(trimethylsilyl)methane (BTM, CH2[Si(CH3)3]2) and dodecamethylcyclohexasilane (DCS, Si6(CH3)12) on clean Si(100) surfaces has been studied by C 1s core-level and valence-band photoemission spectroscopy. Our model for the deposition of carbon by BTM involves decomposition into a –CH2Si(CH3)3 surface moiety for room-temperature adsorption, which further decomposes upon annealing to 550 °C to form a surface terminated primarily by CHx units. DCS deposits almost three times as much C on the surface as BTM. The data are consistent with DCS undergoing a ring opening and bonding to the surface as polydimethylsilane chains. Annealing both adsorbates to 950 °C causes a large decrease in the C 1s signal due to the fact that Si segregates to the surface at temperatures above 900 °C. The valence-band photoemission of Si(100) dosed with DCS at 950 °C is in good agreement with that of β-SiC, whereas the analogous BTM spectrum deviates significantly.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Near-edge x-ray absorption fine structure (NEXAFS) has been used to study the defect content and the bonding modifications induced in BN thin films by ion implantation. The initial films were hexagonal-like BN grown on Si(100) by pulsed laser deposition. Subsequent ion implantation with N2+ at 180 keV induces the formation of a significant proportion of sp3 bonding (cubic-like), and the formation of nitrogen void defects in the remaining sp2 BN. These modifications in the bonding of a film lacking long range order can only be distinguished with a local order technique like NEXAFS. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The C 1s and O 1s core-level photoabsorption spectra of poly[2-methoxy,5-(2′-ethyl- hexoxy)-1,4-phenylene vinylene] (MEH-PPV) before and after exposure O2 and broadband visible light were recorded to determine the degradation pathway for this polymer. The change in the O 1s spectra as a function of exposure demonstrates that the O adds to the polymer chain to form a carbonyl group. Exposure to only O2 or only light causes no change in the C 1s or O 1s spectra. In the C 1s spectra, the change in the dependence on the photon angle of incidence after exposure demonstrates that O attacks the polymer at the double bond in the vinyl group thereby altering the extended conjugation of the polymer. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Core-level photoabsorption has been used to determine the sp2 and sp3 bonding content of nanocrystalline diamond thin films grown using C60 or CH4 precursors. The C(1s) absorption spectra show clear bulk diamond excitonic and sp3 features with little evidence of sp2 bonding, while the Raman spectra measured from these same films are ambiguous and indeterminate. This result can be attributed to the local structure (near-neighbor bonding) sensitivity of core-level photoabsorption that is insensitive to domain size, unlike Raman spectroscopy. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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