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  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 51-52 (May 1996), p. 261-270 
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 130-136 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an application of nuclear magnetic resonance (NMR) spectroscopy to the study of fluorine-doped silicate glass prepared by the modified chemical vapor deposition process, prior to drawing the rod into fibers. The silica contains 1.03-wt. % fluorine, as determined by the calibrated intensity of the 19F NMR spectrum. The isotropic chemical shift of the 19F spectrum shows that fluorine bonds only to silicon; there is no evidence of oxyfluorides. Analysis of the distribution of nuclear dipolar couplings between fluorine nuclei reveals that the relative populations of silicon monofluoride sites [Si(O–)3F] and species having near-neighbor fluorines, such as silicon difluoride sites [Si(O–)2F2], are nearly statistically random. That is, to a good approximation, the fluorine substitutes randomly into the oxygen sites of the silica network. There is no evidence of local clusters of fluorine sites, silicon trifluoride sites [Si(O–)F3], or silicon tetrafluoride (SiF4).
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 197-203 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study, 31P nuclear magnetic resonance spectra of phosphorus-doped silica have been analyzed to determine the concentration, chemical bonding and spatial distribution of phosphorus. The silica samples were prepared as performs for optical waveguide fibers. The two samples examined contained 1.12±0.02 and 0.06±0.02 wt. % phosphorus. Comparison with the profile of the refractive index shows that a nominal 1.0 wt. % phosphorus increases the refractive index 0.055% relative to pure fused silica. A single, well-defined 31P chemical shielding powder pattern is observed which implies that one species of phosphorus is dominant. Based on the 31P isotropic chemical shift and the magnitude and orientation of the shielding anisotropy, the phosphorus species is interpreted to be P(O) (O−)3. That is, the phosphorus is pentavalent and forms one terminal P=O bond and three bridging P-O− bonds. The distribution of phosphorus-phosphorus internuclear distances, determined from the 31P spin-echo data, indicates that phosphorus is randomly substituted into the silica network: there is no evidence of phosphate clusters.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystal thin films of Pb(ZrxTi1−x)O3 (PZT) covering the full compositional range (0≤x≤1) were deposited by metal-organic chemical vapor deposition. Epitaxial SrRuO3(001) thin films grown on SrTiO3(001) substrates by rf-magnetron sputter deposition served as template electrode layers to promote the epitaxial growth of PZT. X-ray diffraction, energy-dispersive x-ray spectroscopy, atomic force microscopy, transmission electron microscopy, and optical waveguiding were used to characterize the crystalline structure, composition, surface morphology, microstructure, refractive index, and film thickness of the deposited films. The PZT films were single crystalline for all compositions exhibiting cube-on-cube growth epitaxy with the substrate and showed very high degrees of crystallinity and orientation. The films exhibited typical root mean square surface roughness of ∼1.0–2.5 nm. For tetragonal films, the surface morphology was dominated by grain tilting resulting from ferroelectric domain formation. We report the systematic compositional variation of the optical, dielectric, polarization, and electronic transport properties of these single-crystalline PZT thin films. We show that the solid-solution phase diagram of the PZT system for thin films differs from the bulk due to epitaxy-induced strains and interfacial defect formation. High values of remanant polarization (30–55 μC/cm2) were observed for ferroelectric compositions in the range of 0.8≤x≤0.2. Unlike previous studies, the dielectric constant exhibited a clear dependence on composition with values ranging from 225 to 650. The coercive fields decreased with increasing Zr concentration to a minimum of 20 kV/cm for x=0.8. The undoped films exhibited both high resistivity and dielectric-breakdown strength (1013–1014 Ω cm at 100 kV/cm and 300–700 kV/cm, respectively). © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Core-level photoabsorption has been used to determine the sp2 and sp3 bonding content of nanocrystalline diamond thin films grown using C60 or CH4 precursors. The C(1s) absorption spectra show clear bulk diamond excitonic and sp3 features with little evidence of sp2 bonding, while the Raman spectra measured from these same films are ambiguous and indeterminate. This result can be attributed to the local structure (near-neighbor bonding) sensitivity of core-level photoabsorption that is insensitive to domain size, unlike Raman spectroscopy. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Ultramicroscopy 23 (1987), S. 421-431 
    ISSN: 0304-3991
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Natural Sciences in General , Physics
    Type of Medium: Electronic Resource
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