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  • 1
    Electronic Resource
    Electronic Resource
    Temperature evolution of domains in potassium niobate single crystals (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 376-381 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The behavior of domain walls in KNbO3 single crystals with temperature variation from room temperature to 300 °C has been investigated in situ by a heating visualization system. It has been observed that domain walls show active behavior in a small temperature range from the phase transition temperature of 225 °C, the range being about 10 °C in the orthorhombic phase and 15 °C in the tetragonal phase. The 90° domain walls are generated randomly and extend themselves rapidly within the crystal in high density. The 60° domain walls, which are only observed in orthorhombic phase, do not appear randomly but are formed along the boundary of intersecting 90° domain walls. The results suggest that the 90° domain walls are most likely caused by microdefects within the crystal, and that dislocations at the junction of intersecting 90° domain walls supply nucleation sites for the 60° domain walls. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362792
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  • 2
    Electronic Resource
    Electronic Resource
    Dependence of charging on crystallographic orientations of an as-grown α-quartz (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1352-1354 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The scanning electron microscope copper-detector technique introduced most recently by H. Gong and C. K. Ong [J. Appl. Phys. 75, 449 (1994)] is employed for the investigation of charging on faces m {101¯0}, R {101¯1}, and χ {516¯1} of single-crystalline α-quartz. It is found that the charging ability decreases in the order of m, R, and χ, revealing the dependence of charging on crystallographic orientations, and these results are confirmed by the well-established mirror-image method. In addition, the experimental results also suggest that not only electron-irradiation-induced defects but also intrinsic defects are responsible for charge trapping.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357803
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  • 3
    Electronic Resource
    Electronic Resource
    Effects of impurity concentration on dielectric loss in Zn-doped InP at microwave X-band frequencies (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7444-7447 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microwave dielectric measurements have been performed on various Zn-doped InP crystals using a vector network analyzer. There are two kinds of dielectric response in Zn-doped InP crystals depending on their Zn concentration. The general dielectric response in InP in the microwave frequency region is dielectric relaxation, which is related to the dipolar species formed from the ionized substitutional ZnIn−. The other dielectric response of InP crystals doped with a higher Zn concentration is dielectric loss. The crystal doped with Zn to a concentration of 2.14×1018 cm−3 shows a strong dielectric loss at 11 GHz, but no dielectric loss peaks are found in crystals doped with a lower Zn concentration of 4.36×1017 cm−3. The dipolar species, which gives rise to the dielectric loss in Zn-doped InP crystals, is believed to be a result of vacancy complex defects of neutral substitutional ZnIn and two P vacancies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356638
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  • 4
    Electronic Resource
    Electronic Resource
    Microwave dielectric resonance of a fluoride glass (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 8219-8221 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dielectric properties of a fluorozirconate glass are investigated in the frequency range from 0.5 to 13.5 GHz using a microwave vector network analyzer. A prominent dielectric resonance is observed around 7.0 GHz. The resonance may be due to a fundamental interunit vibrational mode of the basic structural ZrFn polyhedral units of the fluorozirconate glass.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357028
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of impurities on dielectric properties of fluorozirconate glasses at microwave frequencies (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 1177-1182 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dielectric properties of fluorozirconate glasses doped with different impurities have been investigated in the frequency region of 3.0–12.5 GHz using a microwave network analyzer. For glasses containing oxide impurities such as PbO, SiO2, and TiO2, the position of the dielectric resonance, which is observed in the pure fluoride glass, shifts to higher frequencies. Amplitudes of the resonance peaks also become much smaller. The oxide impurities are observed to exist as large numbers of tiny precipitates in the glasses. When the glasses are doped with InF3, the position of the resonance peak shifts to a higher frequency but the amplitude of the peak remains unchanged. The InF3 may be substituted for AlF3 in the glasses. A higher half-resonance width is observed in the doped fluorozirconate glasses. The changes in the dielectric properties are attributed to the different behaviors of the impurities, which affect the structural interunit vibration in the fluoride glasses. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366813
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  • 6
    Electronic Resource
    Electronic Resource
    Structure of Brazil twin boundaries in amethyst showing brewster fringes (1990)
    Springer
    Physics and chemistry of minerals 17 (1990), S. 207-211 
    Details
    ISSN: 1432-2021
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: Abstract Optical investigations of Brewster fringes in natural amethyst crystals have indicated that the fringes are Brazil twin boundaries consisting of McLaren and Pitkethly type zig-zag structures and closed parallelograms. The two types of Brazil twin boundaries appear alternately in the successive fringes and in different orientations in one fringe. The Brewster fringes develop by a process of incorporation of many Brazil twin lamellae, when growth conditions are stabilized after this process. If perturbation occurs in growth conditions, distinct growth banding with and without Brazil twin lamellae will develop, and not Brewster fringes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00201451
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  • 7
    Electronic Resource
    Electronic Resource
    Generation of Brazil and Dauphiné twins in synthetic amethysts (1990)
    Springer
    Physics and chemistry of minerals 17 (1990), S. 320-325 
    Details
    ISSN: 1432-2021
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: Abstract The generation of both Brazil and Dauphiné twins is triggered by strain fields associated with the fluctuation of growth parameters when solid inclusions of goethite (?) are precipitated on to a growth surface. Brazil twins are generated either directly from solid inclusions of smaller size or dislocations originating therefrom, whereas Dauphiné twins are generated only directly from solid inclusions of larger size. Precipitation of polymerized embryonic particles of SiO2 on the surface of solid inclusions is considered to be responsible for the generation of Brazil twins, whereas for Dauphiné twins it is necessary that embryonic particles precipitated in twin orientation on the surface of solid inclusions grow beyond a critical size.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00200127
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