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  • 1
    Electronic Resource
    Electronic Resource
    Electron-beam-induced pattern etching of AlGaAs using an ultrathin GaAs oxide as a resist (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3630-3634 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron-beam (EB)-induced pattern etching of AlxGa1−xAs (0≤x≤0.7) is described. An ultra-thin GaAs oxide at the surface of a GaAs/AlGaAs heterostructure wafer is used as a resist film. The GaAs oxide resist can be selectively removed by EB irradiation in a Cl2 ambient, which results in pattern etching of GaAs/AlGaAs. The etch rate of AlGaAs is examined as functions of substrate temperature, AlAs mole fraction, and EB flux. The results indicate that pattern etching is realized in the AlAs mole fraction range of 0≤x≤0.7
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346325
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Reduction of induced damage in GaAs processed by Ga+ focused-ion-beam-assisted Cl2 etching (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2392-2399 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Damage in GaAs induced by Ga+ focused-ion-beam-assisted Cl2 etching is studied by photoluminescence (PL) intensity measurements as functions of ion energy, ion dose, and substrate temperature. By decreasing the ion energy from 10 to 1 keV, the damage depth decrease to 1/5, where damage depth is taken as the thickness at which the PL intensity recovers by wet etching. The damage depth is shallower when the etching yield is larger with the same ion energy. By increasing the ion dose, the normalized PL intensity decreases, but damage depth is nearly constant. Over 1015 ion dose, the normalized PL intensity shows a constant value. By increasing the sample temperature, the damage depth becomes shallower. At 150 °C with ion energy of 1 keV, the damage depth is less than 0.5 μm, which is the detection limit of the PL measurement in GaAs substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346497
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    GaAs pattern etching with little damage by a combination of Ga+focused-ion-beam irradiation and subsequent Cl2 gas etching (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6415-6419 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pattern formation on GaAs by Ga+ focused-ion-beam (FIB) irradiation and subsequent Cl2 gas etching was carried out. A higher etch rate at the FIB-irradiated area compared with that not irradiated under Cl2 gas allows pattern construction without a mask process. The degree of residual crystal damage was evaluated using photoluminescence (PL) intensity measurements. The PL intensity in the etched region was one order of magnitude stronger than that of FIB sputtering, and was several times stronger than that of Ga+ FIB-assisted Cl2 etching. Etch depths of the order of 100 nm, which is five times deeper than that obtained by FIB sputtering, were efficiently performed using moderate Ga+-ion doses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346862
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Novel electron-beam lithography for in situ patterning of GaAs using an oxidized surface thin layer as a resist (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4297-4303 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first demonstration of in situ electron-beam (EB) lithography is reported, where a photo-oxidized surface thin layer of GaAs is used for a resist. The in situ EB lithography sequence consists of five processes, i.e., preparation of a clean GaAs surface, photo-oxidation for a resist film formation, direct patterning of the oxide resist by EB-induced Cl2 etching, Cl2 gas etching of GaAs surface for pattern transfer, and thermal treatment in an arsenic ambient for resist removal and surface cleaning. The GaAs wafer is never exposed to air throughout all of the above processes to avoid an unintentional surface contamination. The minimum electron dose required for patterning of the GaAs oxide resist is about 5×1016 cm−2. An overgrown layer on the patterned GaAs surface shows a good surface morphology, which strongly indicates that this technology makes it possible to repeat crystal growth and surface patterning.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344945
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Novel in situ pattern etching of GaAs by electron-beam-stimulated oxidation and subsequent Cl2 gas etching (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2725-2727 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new method for in situ pattern etching of GaAs was demonstrated by using an electron-beam (EB)-stimulated-oxidized surface layer as a mask for subsequent Cl2 gas etching. This process is based on the experimental results that GaAs oxide prepared by EB irradiation under an oxygen atmosphere is resistive to Cl2 gas etching, whereas GaAs oxide without an EB can be easily etched. The resistance of the oxide mask against Cl2 gas etching varies depending on the EB dose with which the oxide of GaAs is formed. A fine pattern, such as a 1 μm linewidth in a 5-μm pitch line-and-space, is obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348626
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  • 6
    Electronic Resource
    Electronic Resource
    A multichamber system for in situ lithography and epitaxial growth of GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 1828-1835 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A novel multichamber system for beam-assisted etching, in situ lithography, and molecular-beam epitaxy (MBE) has been constructed and proved to be usable with full functions. This system comprises seven ultrahigh-vacuum (UHV) chambers connected by UHV tunnels. A specially designed gun column, which can be used for a focused-ion-beam (FIB) gun or an electron-beam gun, and an introduction system of Cl2 gas have been installed in a UHV chamber for beam-assisted Cl2 gas etching. In order to evaluate the induced damage by ion irradiation, the FIB gun with a novel retarding system was installed. An in situ Auger electron spectroscopy apparatus and an in situ photoluminescence unit were attached to the analysis chamber in order to evaluate the surface composition and the induced damage, respectively. Examples of GaAs/AlGaAs heterostructure grown on in situ patterned substrates showed good surface morphology, indicating the usefulness of this technique for microfabrication.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142429
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  • 7
    Electronic Resource
    Electronic Resource
    Photo-oxidation of GaAs for in situ patterned-mask formation prior to chlorine gas etching (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 98-100 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This is the demonstration of "in-situ masking'' concept. In situ patterning of GaAs is carried out by using a photo-oxidized surface layer as a mask for subsequent Cl2 etching. Clean GaAs surface provided by molecular beam epitaxy is exposed to pure oxygen and is simultaneously irradiated with an Ar+ ion laser of the 514.5 nm line for photo-oxidation of the surface. Subsequent Cl2 gas etching of the photo-oxidized sample reveals that the GaAs oxide fills the role of an etching mask. The resistance of the oxide mask against Cl2 etching varies depending on the laser fluence with which the oxide of GaAs is formed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102616
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  • 8
    Electronic Resource
    Electronic Resource
    Submicron pattern etching of GaAs by in situ electron beam lithography using a pattern generator (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1012-1014 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pattern etching of GaAs at submicron size is carried out by in situ electron beam (EB) lithography using a computer-controlled pattern generator. GaAs oxide on the wafer surface is used as a resist film in EB-induced Cl2 etching. A 0.5 μm linewidth in a 1 μm pitch line-and-space pattern with flat top surface is obtained. Observations of the pattern edge with a scanning electron microscope show that the boundary between the etched area and the oxide mask area is abrupt and that the undulation of the pattern edge is less than about 30 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103551
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  • 9
    Electronic Resource
    Electronic Resource
    Stable supermode operation in phase-locked laser diode arrays with three index waveguides (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2783-2785 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A phase-locked laser diode array with three index waveguides is described. The array has a novel structure which prevents channels from being etched back. As the result, the waveguide elements in the array are very uniform. A stable 180° phase mode oscillation is obtained up to 50-mW output power in the single longitudinal mode and three supermodes are observed simultaneously above 50-mW output power. The near-field patterns and the far-field patterns of these supermodes are in good agreement with the theoretical results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335872
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    Paper (German National Licenses)
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  • 10
    Electronic Resource
    Electronic Resource
    Characterization of subsurface damage in GaAs processed by Ga+ focused ion-beam-assisted Cl2 etching using photoluminescence (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1375-1381 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Subsurface damage in GaAs processed by a Ga+ focused ion-beam-assisted Cl2 etching is studied by photoluminescence (PL) measurement. The PL intensity of the processed sample decreased to (1)/(30) – (1)/(40) compared to that of the unprocessed sample. The recovery of PL intensity by a step removal of the damaged layer is observed as a function of the removed layer thickness. The removal of a 0.7-μm-thick surface layer enables the PL intensity to be recovered perfectly, which leads to the postulate that the damaged layer thickness is 0.7 μm at least, which is much larger than the ion range (about 0.01 μm). The recovery of PL intensity is analyzed on a one-dimensional model in the direction normal to the sample surface. Computer simulations of PL intensity are carried out. The calculated result fully explains the experimental PL intensity recovery as a function of the removed layer thickness, which gives the profile of subsurface damage in the sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344439
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    Paper (German National Licenses)
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