Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Transport anisotropy in spontaneously ordered GaInP2 alloys (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2425-2427 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Large anisotropy in minority carrier diffusion length and specific conductivity is observed in epitaxial layers of GaInP2 alloys with CuPtB-type ordering. Both the diffusion length and specific conductivity are enhanced, by factor of 10, in the [110] direction, parallel to the line of intersection of the ordered (1–11) and (−111) planes with the (001) growth surface. The reduction in transport length in the [1–10] direction is attributed to carrier scattering at domain boundaries. No transport anisotropy is observed in disordered GaInP2 epitaxial layers. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118864
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Electron beam induced current measurements of minority carrier diffusion length in gallium nitride (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2531-2533 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Minority carrier diffusion length in epitaxial GaN layers was measured as a function of majority carrier concentration and temperature. The diffusion length of holes in n-type GaN is found to decrease from 3.4 to 1.2 μm in the doping range of 5×1015–2×1018 cm−3. The experimental results can be fitted by assuming the Einstein relation and by the experimental dependence of hole mobilities on carrier concentration. The low injection carrier lifetime of ∼15 ns, used in the fit, is largely independent of the doping level. The diffusion length, measured for ∼5×1015 and 2×1018 cm−3 dopant concentrations, shows an increase with increasing temperature, characterized by an activation energy Ea of ∼90 meV, independent of the impurity concentration. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117729
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Raman analysis of light-emitting porous silicon (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2086-2088 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Porous silicon that strongly emits in the visible was analyzed using Raman scattering. The spectrum peaks near 508 cm−1, has a width of ∼40 cm−1, and is very asymmetric. Using a model of phonon confinement, this suggests that the local structure of porous silicon is more like a sphere than a rod and has a characteristic diameter of 2.5–3.0 nm. Polarization Raman measurements suggest that the structure does not consist of a series of parallel columns.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107097
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Effect of sulfur doping on optical anisotropy of CdSiAs2 (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2867-2869 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polarization dependent photoluminescence and photocurrent measurements were carried out on undoped and sulfur doped single crystals of CdSiAs2. For undoped crystal the interband transition A shows a 40 meV blueshift under perpendicular light polarization with respect to the parallel one. This shift is about twice as large for sulfur doped crystal. A pronounced photoabsorption band at 1.53 eV, related to the sulfur donor, is observed in the low temperature photocurrent spectrum. A significant enhancement of the optical anisotropy of donor-acceptor transition is seen in the low temperature photoluminescence spectra of CdSiAs2 doped with sulfur. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117345
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...