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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4005-4007 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A sample of two-dimensional electron-gas material is stuck, face upward, onto two flat, Corbino-configuration metal electrodes, thereby providing capacitive coupling (a few pF) to the gas through the high-dielectric-constant substrate material. At high magnetic fields and low temperatures, the minima in σxx produce a high resistance in series with the two coupling capacitors, and this resistance can be measured with an audio-frequency (10 kHz) capacitance bridge. The resistance peaks in high-mobility samples are very sharply defined, and their periodicity in 1/B gives directly the electron concentration. At low fields, prior to the appearance of the peaks, the resistance is proportional to μB2/n, thus relative mobilities may be determined.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3570-3573 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A dc torsional magnetometer for use in high magnetic fields is described. It provides several significant advantages over an earlier device, both by its increased sensitivity and better damping, and also, in particular, because its design allows a torque to be introduced electrostatically. This makes it possible to compensate for monotonic background signals, and to provide a "transfer standard'' between calibration and operating conditions. An example is given of its use in the study of the de Haas–van Alphen effect in a single-quantum-well two-dimensional electron system.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence (PL) spectroscopy was used to estimate the compositional disordering induced by Ga focused-ion-beam implantation in a series of strained InGaAs/GaAs quantum wells (QW). A simple formalism was derived to estimate the indium concentration and the degree of interdiffusion of the QWs from the observed shifts in PL transition energies. A study of nanostructures indicated that the lateral extent of compositional disordering was significantly larger than predicted from the lateral spreading of the ion beam.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2309-2311 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface relief gratings with submicrometer periods have been fabricated in silica by ion implantation with a focused ion beam, followed by etching in diluted hydrofluoric acid. Implanted silica etches three times faster than unimplanted silica and groove depths of the order of 300 nm have been achieved. The method does not require photolithography or masking layers, allows arbitrary patterns to be defined, and may be used to fabricate diffractive optical elements or grating filters in optical waveguides.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Compositional disordering of strained InGaAs quantum wells by the implantation of Au ions has been examined as a function of the incident implantation angle. Together, photoluminescence and secondary ion-mass spectrometry demonstrate that mixing at depths significantly greater than the mean-implantation range is due to the creation of point defects by ions which have channeled into the crystal. Compositional disordering effects due to the rapid thermal diffusion of Au ions was negligible.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of strain on F+ and Si+ implantation-induced compositional disordering in InGaAsP strained layer multiple-quantum-well (MQW) heterostructures has been studied by investigating the temperature dependence of the photoluminescence (PL) spectra and spatial distribution of degree of polarization of PL for both compressive and tensile strained, and unstrained MQW heterostructures. It was found that under similar implantation and anneal conditions a spectral blueshift occurs which is largest in the compressively strained structure and the smallest in the tensile one. This behavior is explained in terms of implantation-enhanced interdiffusion, by taking into account the composition differences of elements between the wells and barriers. The development of strain related to the process of interdiffusion has been experimentally observed.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2412-2414 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have determined the threshold dose for 8 MeV Bi+ ions to induce intermixing of GaAs quantum wells in AlGaAs and InGaAs quantum wells in GaAs after rapid thermal annealing at 850 °C. Our measured threshold for the GaAs/AlGaAs system agrees well with previous work. The threshold for the InGaAs/GaAs system is much lower and explains, at least in part, earlier difficulties in the lateral patterning of nanostructures by focused-ion-beam lithography.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 9 (1969), S. 15-20 
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract De Haas-van Alphen experiments have been used to determine the scattering temperatures which characterize the [111] neck and belly extremal orbits in some dilute alloys of silver and gold. The relaxation time is anisotropic withτ N/τ B≃2 in both Ag(Au) and Au(Ag) when the scattering is dominated by the solute. This anisotropy is in the opposite sense to that observed in another homovalent alloy Ag(Cu) and to that observed in the presence of charged impurities.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 9 (1969), S. 21-22 
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We have used the de Haas-van Alphen (dHvA) effect to study the relaxation times of “neck” and “belly” electrons in copper containing a range of dilute heterovalent and transition-metal solutes. The scattering (Dingle) temperaturex is derived from the variation of signal amplitude with magnetic field at a fixed temperature. Values ofx are believed accurate to within 0.1°K in a range ofx N(neck) from ≃0.4°K to ≃6°K andx B(belly) from ≃0.2°K to ≃3°K. Our results may be summarized as follows:Heterovalent solutes (Zn, Cd, Al; up to 0.1 at. %) $$x_N \simeq 22^\circ K/at.{\mathbf{ }}\% {\mathbf{ }}for{\mathbf{ }}Zn,{\mathbf{ }}Cd;{\mathbf{ }} \simeq {\mathbf{ }}95^\circ K/at.{\mathbf{ }}\% {\mathbf{ }}for{\mathbf{ }}Al.{\mathbf{ }}x_N /x_B \simeq 1.2$$ .Transition-metal solutes (Ni, Co, Fe, Mn, Cr; up to 0.05 at.-%) $$x_N \simeq 22^\circ K/at.{\mathbf{ }}\% {\mathbf{ }}for{\mathbf{ }}Ni,{\mathbf{ }}Mn;{\mathbf{ }} \simeq {\mathbf{ }}95^\circ K/at.{\mathbf{ }}\% {\mathbf{ }}for{\mathbf{ }}Fe,{\mathbf{ }}Cr;{\mathbf{ }} \simeq {\mathbf{ }}70{\mathbf{ }}^\circ K/at.{\mathbf{ }}\% {\mathbf{ }}for{\mathbf{ }}Co.{\mathbf{ }}x_N /x_B \simeq 0.5{\mathbf{ }}for{\mathbf{ }}Ni,{\mathbf{ }}Mn;{\mathbf{ }} \simeq {\mathbf{ }}0.3{\mathbf{ }}for{\mathbf{ }}Fe,{\mathbf{ }}Cr;{\mathbf{ }} \simeq {\mathbf{ }}0.4{\mathbf{ }}for{\mathbf{ }}Co.$$ . An anomalous dependence of dHvA amplitude on magnetic field has been observed for belly oscillations in several very dilute Cu Cr alloys. This anomaly is both concentration and temperature-sensitive, and is probably related to the Kondo effect.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Journal of low temperature physics 1 (1969), S. 223-229 
    ISSN: 1573-7357
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The absolute de Haas-van Alphen (dH-vA) frequencies and the scaling effect of small hydrostatic pressures on extremal cross sections of the Fermi surface have been measured in freely mounted samples of K, Rb, and Cs. The dH-vA frequencies are in good agreement with those derived from currently accepted values for the low-temperature lattice constants of the three metals at (1.824±0.002), (1.603±0.003), and (1.365±0.002)×108 G, respectively. The low-temperature compressibilities derived from the pressure measurements at (2.577±0.013), (3.644±0.015), and (4.020±0.02)×10−2 kbar−1, respectively, show discrepancies of −5, −8, and −14% with those measured by more conventional techniques. The characteristic energyB 0 V 0 (bulk modulus × atomic volume) is found to be constant at about 1.67×105 J/mole in the three metals.
    Type of Medium: Electronic Resource
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