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  • 1
    Electronic Resource
    Electronic Resource
    Investigation of deep levels in Zn-doped InSe single crystals (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2274-2279 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels in p-InSe single crystals doped with zinc have been investigated by resistivity, Hall-effect, photoinduced-current transient spectroscopy, and space-charge-limited-current measurements. Hole traps located about 0.59 eV above the valence band have been detected and the corresponding thermal capture cross sections evaluated. These trapping levels are probably associated with defects due to dopant atoms in the interlayer regions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351126
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  • 2
    Electronic Resource
    Electronic Resource
    Space-charge-limited currents in amorphous gallium sulfide thin films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 320-323 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The density N(E) of midgap states in vacuum-evaporated and thermally annealed amorphous GaS films has been deduced from space-charge-limited-current (SCLC) measurements. Specimens with an In/a-GaS/stainless-steel sandwich structure have been used to obtain current-voltage characteristics at room temperature. By using an analytical method the density N(E) over an energy range extending about 0.18 eV above the Fermi level at thermal equilibrium has been calculated. The conductivity data for variable-range hopping [log(σ)∝T−1/4] have also been studied, but the calculated values of N(E) are approximately one order of magnitude higher than those obtained by SCLC measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347715
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  • 3
    Electronic Resource
    Electronic Resource
    Investigation of the electrical properties of Cd-doped indium selenide (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6847-6853 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resistivity, Hall-effect, and deep-level transient spectroscopy measurements have been performed on Cd-doped InSe single crystals grown by the Bridgman–Stockbarger method. The temperature dependence of the hole mobility can be explained by combining the optical phonon and the ionized impurity scatterings. Two hole-trapping levels have been detected at 0.42 and 0.48 eV above the valence band with a capture cross section of about 10−17 cm2. Finally, we have found the latter trap to be a deep acceptor level, which is very probably associated with defects or defect complexes formed by the dopant atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349807
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  • 4
    Electronic Resource
    Electronic Resource
    Investigation of electronic properties of gallium sulfide single crystals grown by iodine chemical transport (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 138-142 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoinduced-current-transient-spectroscopy and space-charge-limited-current measurements have been performed on n-type GaS single crystals grown from vapor by iodine chemical transport. Three electron traps located at 0.17, 0.45, and 0.56 eV from the conduction band have been detected, with a thermal capture cross section of 2×10−19, 5×10−14, and 8×10−13 cm2, respectively. Moreover, by Hall-effect measurements, an impurity hopping conduction with an activation energy of 0.12 eV has been evidenced in the range of temperatures between 220 and 320 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347105
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  • 5
    Electronic Resource
    Electronic Resource
    Structural and electrical properties of In2O3–SeO2 mixed oxide thin films for gas sensing applications (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6571-6577 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In2O3–SeO2 mixed oxide thin films have been obtained by thermal evaporation of a stoichiometric In–Se starting charge and subsequent thermal annealing in an oxygen flow. High-resolution transmission electron microscopy, small area electron diffraction, and digital image processing have been employed in order to investigate the structure and the morphology of the films obtained. Hall effect and resistivity measurements in a vacuum and in a controlled atmosphere have been performed to obtain information about physical properties of these films. The experimental data show evidence that the electrical conductivity of these films undergoes a remarkable variation due to exposure to small concentrations of NO in dry synthetic air or argon. To interpret the behavior of such films, an adsorption kinetic model has been developed and the conductivity variation as a function of gas concentrations, time, and temperature has been derived. The fitting of the theoretical and experimental behavior allows us to determine the adsorption kinetic parameters. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1324703
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  • 6
    Electronic Resource
    Electronic Resource
    Hall effect and impurity levels in lead doped indium selenide (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3982-3986 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hall effect and deep hole level studies in indium selenide single crystal doped with lead are reported. The temperature dependence of the hole mobility can be interpreted by combining the homopolar optical phonon and the ionized impurity scatterings. Electrical properties above 180 K are dominated by an acceptor center at 0.48 eV from the valence band. Moreover, two hole traps of 0.49 and 0.63 eV depths have been evidenced by deep-level transient spectroscopy measurements. These centers are probably associated with defects or defect complexes due to lead atoms precipitated in the interlayers of the crystal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356019
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  • 7
    Electronic Resource
    Electronic Resource
    Deep levels in indium selenide single crystals doped with iodine (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5427-5430 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron trapping levels in indium selenide single crystals doped with iodine have been investigated by deep-level-transient spectroscopy measurements. Two traps located at about 0.60 and 0.21 eV have been detected below the conduction band and the corresponding thermal capture cross sections have been evaluated. The first trap is present both in undoped and doped InSe crystals, whereas the second trap appears in doped samples. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359724
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  • 8
    Electronic Resource
    Electronic Resource
    Kinetic behavior analysis of porphyrin Langmuir–Blodgett films for conductive gas sensors (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1416-1420 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Meso, meso′-buta-1,3-diyne-bridged Ni (II) octaethylporphyrin dimer thin films have been deposited by the Langmuir–Blodgett method and, for the first time, have been considered as the active layer in resistive gas sensors. In particular, the electrical conductivities of these films undergo a remarkable variation due to exposure to small concentrations of NO in air at an operating temperature of 50 °C. To interpret the behavior of such organic films, a model has been built up and the conductivity variation as a function of test gas concentrations and time has been derived. The fitting of theoretical and experimental behavior allows us to determine the number of adsorbed gas molecules per porphyrin dimer, response and recovery times, adsorption and desorption coefficients. The reliability of the model is proved by obtained results. In particular, the determined adsorption and desorption coefficients depend only on test gas species but are unaffected by other experimental conditions such as gas concentration. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368252
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  • 9
    Electronic Resource
    Electronic Resource
    Electrical properties of n-GaSe single crystals doped with chlorine (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2365-2369 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hall-effect and space-charge-limited-current (SCLC) measurements were performed on Cl-doped GaSe single crystals grown by the Bridgmann–Stockbarger method. The temperature dependence of the free electron density shows the characteristics of a partially compensated n-type semiconductor. The electrical properties are dominated by a deep donor level at about 0.57 eV below the conduction band. An electron trapping level between 0.56 and 0.62 eV below the conduction band has been observed by SCLC measurements. The trapping level concentration depends on the amount of dopant. Finally, the conduction band density-of-states effective mass was estimated to be 1.1 m0. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366046
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  • 10
    Electronic Resource
    Electronic Resource
    Thermal deposition and characterization of Se-Sn mixed oxide thin films for NO gas sensing applications (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3541-3546 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films made by a mixing of selenium and tin oxides have been obtained by high vacuum thermal evaporation. A detailed optical, electrical and structural characterization has been performed on all deposited films. Electron microscopy observations show that the films consist of nanosized grains of SeO2 and SnO2 homogeneously arranged. The NO gas sensing properties of this material have been tested in controlled atmosphere. In addition, the influence of oxygen in the test gas mixture was analyzed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366568
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