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  • 1
    Electronic Resource
    Electronic Resource
    MeV Be implantation in GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6165-6170 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-energy Be implantation was performed at 1, 2, and 3 MeV for a dose of 1×1013 cm−2 and at 2 MeV in the dose range of 4×1012–1×1014 cm−2. Range statistics from as-implanted secondary ion mass spectrometry profiles were calculated. The implanted wafers were activated by either conventional furnace or rapid thermal annealing. For the same implant dose, 1×1013 cm−2, the dopant electrical activation decreased with increasing ion energy. For the 2-MeV implants, the dopant electrical activation increased with the implant dose, in the range used in this study. An activation as high as 98% was measured for the 2-MeV/1×1014-cm−2 Be implant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345179
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  • 2
    Electronic Resource
    Electronic Resource
    Atomic and carrier profiles of 1-, 2-, 4-, and 6-MeV 30Si implanted into GaAs (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2986-2990 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 30Si has been implanted in GaAs at energies of 1, 2, 4, and 6 MeV. We have measured atomic concentration profiles using secondary ion mass spectroscopy (SIMS) and carrier concentration profiles using an electrolytic capacitance-voltage procedure. Theoretical atomic profiles have been calculated using the computer code TRIM-86. The range statistics and profile shape factors: Rm, Rp, ΔRp, skewness (γ1), kurtosis (β2), and maximum Si density (Nmax) have been determined from the SIMS data. The first two moments (Rp and ΔRp) were also obtained from the carrier profiles and the theoretical profiles. The range and standard deviation obtained by the separate techniques have a maximum difference of only 15%, and the difference is usually less than 10%. This is less than the mutual experimental uncertainty of 17%. The samples were activated using a furnace anneal (800 °C, 15 min) with a Si3N4 cap and using rapid thermal anneal (1000 °C, 10 s) with and without a cap. No redistribution of Si was observed for any of the anneal conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342715
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  • 3
    Electronic Resource
    Electronic Resource
    Fe implantation in In0.53Ga0.47As/InP (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 481-485 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single and multiple energy Fe+ implants are performed in n-type InGaAs. Rapid thermal and furnace annealings are used to activate the implanted material. Surface Fe accumulation, multiple Fe peaks, and deep in-diffusion of Fe are observed in the secondary ion mass spectrometry profiles of the implanted material. The crystal lattice perfection of the annealed material is evaluated qualitatively by photoreflectance measurements. A maximum resistivity of 4750 Ω cm is measured in the implanted material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343129
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  • 4
    Electronic Resource
    Electronic Resource
    Light-ion-bombarded p-type In0.53Ga0.47As (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4755-4759 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multiple-energy H-, He-, and B-ion bombardments were performed to obtain uniform high resistivity over the entire thickness of p-type In0.53Ga0.47As. High resistivity, 580 Ω cm, which is close to the intrinsic resistivity limit of ≈103 Ω cm in InGaAs, is observed. The thermal stability of the high-resistance layers depended upon the mass of the implanted ion. The B-ion-implanted layers maintained high resistivity up to ≈200 °C. Photoluminesence measurements were used to obtain the energy of compensating levels produced by light-ion bombardment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341191
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  • 5
    Electronic Resource
    Electronic Resource
    Deep radiative levels in as-grown and implanted rapid thermal annealed InP (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2426-2433 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep radiative levels in as-grown and Si-, Be-, and Hg-implanted InP:Fe activated by rapid thermal annealing are studied by photoluminescence measurements. A broadband centered at 1.07 eV is observed in unimplanted InP:Fe. The 1.17- and 0.775-eV peaks in the spectra of Si-implanted InP:Fe, and the 0.861-eV peak in the spectra of Be-implanted InP:Fe are believed to be due to the dopant-defect complexes. In Hg-implanted samples HgIn acceptor related peak is observed at 1.329 eV with longitudinal optical phonon peaks at 1.286 (1-LO) and 1.244 eV (2-LO). A peak at 0.919 eV is observed as an intrinsic peak in all InP samples. A single peak or several peaks with shoulders are also observed in the range 0.65–0.725 eV in many InP samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341677
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  • 6
    Electronic Resource
    Electronic Resource
    Be, S, Si, and Ne ion implantation in InSb grown on GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4228-4233 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single- and multiple-energy Be, S, Si, and Ne ion implantations were performed at room temperature in InSb grown on semi-insulating GaAs substrates. The implanted material was subjected to both isochronal and isothermal annealing schemes. The as-implanted and annealed material was characterized by Hall, secondary ion mass spectrometry, and x-ray rocking curve measurements. The as-implanted material is highly n-type for all implant species used in this study. A maximum p-type activation of 90% and n-type activation of 16% was achieved for Be and S implants, respectively. Be activation depends on the thickness of the InSb layer. No in-diffusion of Be and S was observed even after 500 °C anneal. The Si implant has an amphoteric doping behavior.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348394
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  • 7
    Electronic Resource
    Electronic Resource
    Atomic profiles and electrical characteristics of very high energy (8–20 MeV) Si implants in GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1262-1265 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-energy Si implantation into GaAs is of interest for the fabrication of fully implanted, monolithic microwave integrated circuits. Atomic concentration profiles of 8, 12, 16, and 20 MeV Si have been measured using secondary ion mass spectroscopy (SIMS). The range and shape parameters have been determined for each energy. The theoretical atomic concentration profile for 12 MeV Si calculated using TRIM-88 corresponded to the SIMS experimental profile. No redistribution of the Si was observed for either furnace anneal, 825 °C, 15 min, or rapid thermal anneal, 1000 °C, 10 s. The activation of the Si improved when coimplanted with S. The coimplanted carrier concentration profiles did not show dopant diffusion. Peak carrier concentration of 2×1018/cm3 was obtained with a Si and S dose of 1.5×1014/cm2 each.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345701
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  • 8
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxy growth of InSb films on GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2235-2237 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InSb films have been grown by molecular beam epitaxy on GaAs substrates. The procedure incorporated a low-temperature (300 °C) growth of a thin (300 A(ring)) InSb interface layer prior to the InSb active layer growth at 380 °C. A beam equivalent pressure ratio of Sb4 to In of 4 led to samples with the highest 77 K Hall mobilities. Hall mobilities in excess of 35 000 cm2 /V s at 77 K and x-ray rocking curve widths less than 250 arcsec are routinely achieved in films 2–5 μm thick. The 77 K Hall electron mobilities are a factor of 4 greater than recently reported results. The x-ray rocking curve widths are also substantially less. Possible explanations for the improved film properties are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101134
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  • 9
    Electronic Resource
    Electronic Resource
    High-speed planar GaAs photoconductors with surface implant layers (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 313-315 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective implantation of silicon into GaAs is demonstrated as a simple method for modifying the response characteristics of low-doped planar GaAs photoconductors for optoelectronic circuits with varying requirements. Response times and sensitivities of the photoconductors were strongly dependent on the implantation dose and energy. Rise times and full width at half-maximum (FWHM) values of devices receiving low-dose implants were of the order of 40–150 ps. Rise times and FWHM values of devices which received higher dose implants were in the ranges 50–140 ps and 1–5 ns, respectively. The sensitivity of devices which received higher dose implants was about a factor of 100 (20 dB in optical power) greater than that of devices which received lower dose implants.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99905
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  • 10
    Electronic Resource
    Electronic Resource
    Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1308-1310 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si resonant interband tunnel diodes that demonstrate negative differential resistance at room temperature, with peak-to-valley current ratios greater than 2, are presented. The structures were grown using low-temperature (320 °C) molecular-beam epitaxy followed by a postgrowth anneal. After a 650 °C, 1 min rapid thermal anneal, the average peak-to-valley current ratio was 2.05 for a set of seven adjacent diodes. The atomic distribution profiles of the as-grown and annealed structures were obtained by secondary ion mass spectrometry. Based on these measurements, the band structure was modeled and current–voltage trends were predicted. These diodes are compatible with transistor integration. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124677
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