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  • 1
    Electronic Resource
    Electronic Resource
    Molecular-beam-epitaxial growth and characterization of In2Te3 (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1936-1941 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report studies of the molecular-beam-epitaxial growth of In2Te3. The unique structure of In2Te3, with 1/3 of the In sublattice sites vacant, is of fundamental interest for molecular-beam-epitaxial growth dynamics. We show that thin-film (500–7000 A(ring)) single-crystal In2Te3 can be grown successfully on InSb(100) homoepitaxial layers at substrate temperatures of 300–350 °C and Te/In flux ratios of 3/2 to 5/2. Epitaxy has been monitored by reflection high-energy electron diffraction and the stoichiometry of the grown layers assessed by Auger spectroscopy and energy dispersive x-ray analysis. Raman studies of the layers are presented and compared with a bulk In2Te3 standard. Crystal structure has been determined by x-ray diffraction using Weissenburg and oscillation photographs, confirming that the layers have a fcc crystal structure with a lattice parameter of 18.50 A(ring), in excellent agreement with the bulk value. Band-gap measurements have been performed on the layers by photoreflectance. We report a value for the α-In2Te3 band gap of 1.19 and 1.31 eV at 300 and 77 K, respectively. Molecular-beam-epitaxial growth of InSb and CdTe on epitaxial In2Te3 films for fabrication of InSb/In2Te3/InSb and InSb/In2Te3/CdTe multilayers has been studied. Auger depth profiling of the resulting layers shows severe intermixing into the In2Te3. These results are supported by thermodynamic considerations of the InSb-In2Te3 interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342881
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  • 2
    Electronic Resource
    Electronic Resource
    Fe implantation in In0.53Ga0.47As/InP (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 481-485 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single and multiple energy Fe+ implants are performed in n-type InGaAs. Rapid thermal and furnace annealings are used to activate the implanted material. Surface Fe accumulation, multiple Fe peaks, and deep in-diffusion of Fe are observed in the secondary ion mass spectrometry profiles of the implanted material. The crystal lattice perfection of the annealed material is evaluated qualitatively by photoreflectance measurements. A maximum resistivity of 4750 Ω cm is measured in the implanted material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343129
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  • 3
    Electronic Resource
    Electronic Resource
    Interface roughness of short-period AlAs/GaAs superlattices studied by spectroscopic ellipsometry (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7739-7746 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectroscopic ellipsometry (SE) has been used to study the effects of interface roughness on the optical properties of ultrathin short-period 3×3 GaAs/AlAs superlattices grown by molecular-beam epitaxy (MBE). The complex dielectric function and thickness of the whole superlattice and the thickness of the native oxide overlayer were simultaneously determined by an inversion technique from data in the 1.5–5.0 eV region. The main optical critical points E0, E0+Δ0, E1, E1+Δ1, and E2 were deduced by line-shape fitting of the second derivative of the complex dielectric function of the superlattice to the analytical line-shape expression. The interface roughness is found to shift the optical transitions, except E2, to higher energy and broaden their line shapes. A simple interpretation of the shift and broadening is given. The interface roughness and layer thicknesses obtained by SE are found to be consistent with the results of x-ray diffraction and Raman scattering studies previously reported. The results in this study demonstrate the capability of the post-growth nondestructive characterization by SE to provide useful information about the interface quality of superlattice structures, and consequently to optimize the MBE growth conditions in order to achieve the desired structural parameters.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353972
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  • 4
    Electronic Resource
    Electronic Resource
    Lattice dynamics of II-VI based diluted magnetic semiconductors (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4332-4334 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of far infrared reflectivity and Raman scattering spectra reported recently in Hg1−xMnxTe samples with low composition of Mn impurities are analyzed theoretically. The Kramers–Kronig analysis in the spectral range (50–350 cm−1 ) is employed to obtain the proper energetic positions of the two optical phonons and a weak peak near ∼98 cm−1 (above the longitudinal acoustic-phonon band of HgTe). Simple schemes, based on the so called "oscillator fit'' and modified random element isodisplacement models, are chosen with appropriate values of transition energies and strengths to reproduce the observed reflectivity spectra. A comprehensive calculation of the lattice dynamics in terms of semi-empirical Green's function theory has provided convincing arguments that the feature near 98 cm−1 is a gap mode of Mn in HgTe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346206
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  • 5
    Electronic Resource
    Electronic Resource
    Photoluminescence quenching in Si1−xGex/Si multiple quantum wells grown with atomic hydrogen (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 2875-2880 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We compare the photoluminescence spectra from a series of Si1−xGex/Si (0.1≤x≤0.3) multiple quantum well (MQW) samples grown with atomic hydrogen to a series of similar samples grown without atomic hydrogen. All of the samples were grown at 710 °C. We observe intense quantum confined photoluminescence in the Si1−xGex/Si MQW samples grown without atomic hydrogen. No quantum confined photoluminescence was observed in the Si1−xGex/Si MQW samples grown with atomic hydrogen. This was unexpected, since quantum confined photoluminescence has been observed in the hydrogen-assisted growth of Si1−xGex/Si quantum well structures grown at lower temperatures by other researchers. We believe that this is caused by defects, introduced into the samples during growth with atomic hydrogen, which lead to efficient nonradiative centers that compete with the radiative centers. These defects lead to a reduction of the photoluminescence of the samples grown with atomic hydrogen. Since hydrogen is used as a surfactant to reduce the deleterious effects due to Ge segregation, understanding its role is an important step in SiGe materials development.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369632
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  • 6
    Electronic Resource
    Electronic Resource
    Near-band-edge photoluminescence from chemically treated CdTe surfaces (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3107-3110 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of chemical etching and aging under atmospheric conditions have been investigated in In doped, bulk CdTe using photoluminescence (PL) spectroscopy. The etchants studied included Br2/CH3OH, KOH/CH3OH, Na2S2O4 /NaOH, and K2Cr2O7 /HNO3. The results indicate a large enhancement of the 1.5896-eV excitonic feature due to chemical treatment and aging. The 1.5896-eV peak was previously shown to originate from a native defect involving a Cd vacancy. On this basis, we interpret the primary perturbation to be a small loss of Cd within the sampling region. Previous studies have reported substantial loss of Cd in the near-surface region, within ∼25 A of the surface, as a result of etching in Br2/CH3OH. In contrast, a much smaller loss over a possibly larger depth is observed here. The Cd loss is, most likely, substantial nearest to the surface and extends deeper in but with less severity. The implications of these results on interpreting PL spectra, device processing, and long term stability are considered.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346091
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  • 7
    Electronic Resource
    Electronic Resource
    Spectroscopic ellipsometry determination of the properties of the thin underlying strained Si layer and the roughness at SiO2/Si interface (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2688-2690 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The existence of both the strain and microroughness at the interface of thermally grown SiO2 films on Si was ascertained unambiguously for the first time by high accuracy spectroscopic ellipsometry. The dielectric function of the interface was determined by a comprehensive data analysis procedure. By carefully examining the dielectric function obtained by our model, the strain was seen to cause a red shift of 0.042 eV of the interband critical point E1 compared with the bulk silicon value. The thickness of the interface region was found to be 2.2 nm of which a significant part is due to the strain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111492
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