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  • 1
    Electronic Resource
    Electronic Resource
    Excess volumes of binary mixtures of 1,2-dichlorobenzene with 1-alkanols (C4-C8) (1989)
    s.l. : American Chemical Society
    Journal of chemical & engineering data 34 (1989), S. 413-414 
    Details
    ISSN: 1520-5134
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/je00058a012
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  • 2
    Electronic Resource
    Electronic Resource
    Excess volumes of binary mixtures of 1,3-dichlorobenzene with 1-alkanols at 303.15 K (1990)
    s.l. : American Chemical Society
    Journal of chemical & engineering data 35 (1990), S. 338-339 
    Details
    ISSN: 1520-5134
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/je00061a031
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  • 3
    Electronic Resource
    Electronic Resource
    Plasma-assisted pulsed laser deposition of SrBi2Ta2O9 thin films of improved ferroelectric and crystalline properties (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3492-3494 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Significant effect of the introduction of O2-plasma discharge during pulsed laser ablative deposition of SrBi2Ta2O9 (SBT) films on improving the crystallite orientation and ferroelectric properties has been described. O2-plasma assists in the formation of highly crystalline films at a low 700 °C temperature over (111) oriented Pt films coated Si(100) single crystal substrates at a nominal pressure of 200 mTorr. Plasma excitation potential, applied at an auxiliary ring electrode placed near the substrate, has a profound effect on surface morphology, crystallite orientation, and remnant polarization, Pr values. At −350 V, SBT growth at 700 °C with predominant (a-b) orientation showing high Pr∼6.5 μC/cm2 in the as-deposited state has been obtained. In comparison, SBT films deposited identically but without the plasma show a low Pr of ∼1.7 μC/cm2. Ionized cationic species along with ionic and atomic oxygen present in the plasma improve thermodynamic stability of the film growth through enhanced chemical reactivity and thus eliminates the need for any severe postgrowth crystallization anneal step in the synthesis of SBT films. Impingement of energetic O2 ions and atomic oxygen helps lower the nucleation barrier for the growth of (a-b) crystallites and changes the c-axis orientation from normal to near parallel to the film plane. Quality of the film declines with the plasma excitation potential as enhanced kinetic energy of impinging O2 ions introduce defects and reduce nucleation density by resputtering from the substrate. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124140
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  • 4
    Electronic Resource
    Electronic Resource
    Highly c-axis oriented Pb(Zr, Ti)O3 thin films grown on Ir electrode barrier and their electrical properties (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1484-1486 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the structural and electrical properties of sol-gel derived Pb(Zr, Ti)O3 (PZT) thin films deposited on Ir electrode barrier (Ir/poly-Si/SiO2/Si). Owing to the interface-controlled growth, highly c-axis oriented perovskite PZT thin films were obtained for the postdeposition annealing temperature of 580 °C. Additionally, we found that the ferroelectric properties of IrO2/PZT/Ir/poly-Si capacitors were remarkably changed by the partial pressure of oxygen during the deposition of IrO2 top electrodes, which could be due to the enhanced reaction of IrO2 with PZT by the oxygen ion bombardments. Remanent polarization and coercive field of IrO2/PZT/Ir/poly-Si capacitor with the top electrodes deposited at PO2=1 mTorr was 20 μC/cm2 and 30 kV/cm, respectively, and showed negligible polarization fatigue up to 1011 switching repetitions. The leakage current density at a field of 80 kV was 5×10−8 A/cm2. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123588
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  • 5
    Electronic Resource
    Electronic Resource
    Excess volumes of binary mixtures of 1,2,4-trichlorobenzene with 1-alkanols (1992)
    s.l. : American Chemical Society
    Journal of chemical & engineering data 37 (1992), S. 368-369 
    Details
    ISSN: 1520-5134
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/je00007a026
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  • 6
    Electronic Resource
    Electronic Resource
    Role of bismuth precursor in crystallization of SrBi2Ta2O9 thin films (2000)
    Springer
    Applied physics 70 (2000), S. 253-259 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 71.20Nr; 71.20Ps; 71.55-i
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. Crystallization of SrBi2Ta2O9 (SBT) thin films was studied as a function of viscosity of bismuth precursor and baking temperature, in order to fabricate capacitors with improved ferroelectric properties. SBT thin films were deposited on to Pt substrates using a chemical solution deposition (CSD) technique. Post-deposition anneal at 750 °C for 1 h in oxygen atmosphere revealed a significant influence of baking temperature and the viscosity of bismuth precursor on the microstructure and the ferroelectric properties of SBT thin films. A high baking temperature (350 °C) and a low viscosity of bismuth precursor (8 cp) yielded larger amounts of Bi2O3 secondary phase, smaller SBT grains (104 nm), and lower remanent polarization (Pr=2.0 μc/cm2). Additionally, these films exhibited a very high rate of ageing (〉45% reduction in Pr after 7 days). A modified CSD process is suggested, which could suppress the formation of Bi2O3 secondary phase. Films fabricated using modified CSD technique exhibited a much larger grain size of 165 nm, higher Pr of 7.2 μc/cm2, and significantly improved ageing characteristics (〈1% reduction in Pr after 7 days). A qualitative model to describe the ageing in SBT-based capacitors is also suggested.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050044
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of Oxygen Plasma on Growth, Structure and Ferroelectric Properties of SrBi2Ta2O9 Thin Films Formed by Pulsed Laser Ablation Technique (2000)
    Springer
    Journal of electroceramics 5 (2000), S. 7-20 
    Details
    ISSN: 1573-8663
    Keywords: SBT ; plasma ; ferroelectric ; SrBi2Ta2O9 ; pulsed laser ablation ; film growth ; oxygen plasma ; film orientation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Growth of SrBi2Ta2O9 (SBT) thin films has been carried out in the presence of O2-plasma created by applying a potential at an auxiliary ring electrode placed near the substrate. Effect of plasma excitation potential and polarity, especially negative polarity, on the formation of a proper SBT phase at 700°C and in modifying crystallite orientation and microstructure of SBT films over (1 1 1) oriented Pt film coated over TiO2/SiO2/Si(1 0 0) substrates has been demonstrated. Preferred c-axis orientation of SBT films changes to (a–b) orientation with decrease in plasma excitation potential from −700 to −350 V and eliminates secondary Bi2Pt phase formation even at 600°C Microstructural study show a 2-dimensional large flat c-oriented crystallites formed at −700 V change to small crystallites in conformity with the changed aspect ratio for crystallites in (a–b) plane parallel to film plane. Spectroscopic ellipsometric results are in agreement with the microstructural data. These affects are attributed to O2-ion bombardment during film growth which reduces nucleation barrier for growth of crystallites in (a–b) plane. O2-plasma sustains the cationic species formed by laser ablation, which along with O 2 + ions, provide necessary activation energy and enhance the oxidation rates required for SBT phase formation even at 700°C. SBT films grown in O2-plasma show enhancement in remnant polarization value from 1.2 to 6.6 μC/cm2 and display ferroelectric properties superior to those formed without plasma. Further O2-plasma eliminates post deposition annealing step for observance of enhanced polarization values. This study shows O2-plasma excitation potential could be exploited as a new process parameter in laser ablation growth of ferroelectric oxide thin films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1009929109536
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