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  • 1
    Electronic Resource
    Electronic Resource
    Raman spectra of Si-implanted GaSb (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5584-5587 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The variations of Raman spectra for Si-implanted (100) GaSb with various doses and energies were investigated. Samples implanted at room temperature showed disorder or amorphous layer. In order to heal the damage layer, furnace annealing as well as rapid thermal annealing were used. We got a better structural recovery with increasing the annealing temperature or time, and rapid thermal annealing showed better results in comparison with conventional furnace annealing. The relative intensities of longitudinal optical phonons from Raman spectra by rapid thermal annealing samples were compared with those of unimplanted GaSb. It is found that a better recovery of damage layer is formed comparable to an unimplanted wafer when the annealing temperature is 600 °C for 30 s.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346994
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  • 2
    Electronic Resource
    Electronic Resource
    Oxide–GaAs interfacial electronic properties characterized by modulation spectroscopy of photoreflectance (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2857-2859 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Built-in electric fields and interfacial state densities (Dit) in a series of oxide–GaAs heterostructures fabricated by in situ molecular beam epitaxy were studied using room temperature photoreflectance. The samples investigated were air-, Al2O3–Ga2Ox–, and Ga2O3(Gd2O3)–GaAs. We found that the built-in electric fields are 48, 44, and 38 kV/cm for air-, Al2O3-, and Ga2Ox–GaAs samples, respectively. For the Ga2O3(Gd2O3)–GaAs sample, the built-in electric field is negligibly small, indicating a very low interfacial state density. Estimated by the low field limit criterion, Dit is less than 1×1011 cm−2 eV−1. Our results on the Ga2O3(Gd2O3)–GaAs sample are consistent with the data obtained previously using capacitance–voltage measurements in quasistatic/high frequency modes and photoluminescence measurements. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367047
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  • 3
    Electronic Resource
    Electronic Resource
    Study of surface Fermi level and surface state distribution in InAlAs surface-intrinsic-n+ structure by photoreflectance (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2350-2352 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The built-in electric field and surface Fermi level in the InAlAs surface-intrinsic-n+ structures were studied by room-temperature photoreflectance. The samples were grown by molecular beam epitaxy with an undoped layer thickness of 1000 A(ring). The undoped layer was subsequently etched to 800, 600, 400, and 200 A(ring). Different chemical solutions were used in the etching process and the built-in electric field is found independent of the etching process. While the surface Fermi level, in general, varies with the undoped layer thickness, there exists, for each Al concentration, a certain range of thicknesses within which the surface Fermi level is weakly pinned. From the dependence of electric field and surface Fermi level on the undoped layer thickness, we conclude that the surface states distribute over two separate regions within the energy band gap and the densities of surface states are as low as 1.02±0.05×1011 cm−2 for the distribution near the conduction band and 2.91±0.05×1011 cm−2 for the distribution near valence band. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114341
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  • 4
    Electronic Resource
    Electronic Resource
    Photoreflectance study of surface Fermi level in molecular beam epitaxial grown InAlAs heterostructures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3314-3316 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the band gaps and the surface Fermi level positions of a series of In1−xAlxAs surface-intrinsic-n+ structures at room temperature by photoreflectance. Experiments demonstrated that over aluminum concentrations of 0.42–0.57, the surface Fermi level is not pinned at midgap, as commonly believed, but instead varies, respectively, from 0.50±0.01 to 0.81±0.01 eV below the conduction band edge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111294
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  • 5
    Electronic Resource
    Electronic Resource
    Unambiguous photoreflectance determination of electric fields using phase suppression (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3452-3454 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance measurements have been performed on a δ-doped GaAs homojunction. Two Franz–Keldysh oscillation features originating from two different regions (a buffer layer and a top layer) of the structure superimpose with each other in the photoreflectance spectrum. By properly selecting the reference phase, one of the features can be suppressed, thus enabling us to determine the electric fields from the two regions unambiguously. The electric field in the top layer is 3.5±0.2×105 V/cm, which is in good agreement with theoretical calculation. The electric field in the buffer layer is 1.2±0.1×104 V/cm. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115790
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