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  • 1
    ISSN: 0006-291X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 58 (1987), S. 1477-1486 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The detailed description, the experimental demonstration, and the design of single-mode microwave cavity applicators are presented. These microwave applicators utilize an internally tuned, single-mode (or selective multimode) cylindrical cavity to focus and match microwave energy into cylindrical rod, disk-, or slab-shaped material loads. The combination of mode focus control and variable, internal cavity matching allows the efficient coupling of microwave energy into a wide range of solid material loads. The experimental operation of these applicators is demonstrated for low loss to lossy materials, which include nylon, water, and semiconducting silicon wafers. Overall microwave coupling efficiencies of 70%–95% were measured and experiments demonstrated the ability to precisely control material heating. The single-mode fields can be used to heat and diagnose during processing, and on-line process diagnosis was experimentally demonstrated using cavity perturbation theory. When using these cavity applicators, many system variables such as tuning control, cavity electric field strength, input, and reflected power are available as potential process system feedback signals for automated intelligent processing. These applicators can be used to carefully study the fundamentals of electromagnetic interactions of many materials. Applications include the electromagnetic heating of foods, semiconducting and biological materials, and the heating and curing of epoxy and composite materials.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4035-4038 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance(PR) spectra of the graded InAlAs/InGaAs heterojunction bipolar transistor layers were investigated at various temperatures between 8 K and 300 K. The energy features of the PR spectra were fitted and identified as band-to-band transitions in the graded layers which were grown by pulsed molecular beam epitaxy (pulsed-MBE) and InGaAs as well as InAlAs layers. The temperature variation of energy gaps can be described by the Varshni and Bose-Einstein equations. A linear variation relationship of band gaps with Al composition (z) was observed and approximated to be E0(z)=0.809+0.769z eV at T=0 K. However, the parameters aB and aitch-thetaB derived from the Bose-Einstein expression do not change meaningfully in the whole range of Al composition. From the observed Franz-Keldysh oscillations (FKOs) we have evaluated the built-in dc electric fields in the i-InGaAs collector, i-InGaAs spacer and n-InAlAs emitter regions. The electric fields are in good agreement with the continuity condition of electric displacements in the interfaces between emitter and base. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 910-913 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution transmission electron microscopy in conjunction with autocorrelation function analysis have been applied to investigate the evolution of structural order in germanium ion-implanted amorphous silicon (a-Si) layers. A high density of Si nanocrystallites as small as 1 nm in size was detected in as-implanted a-Si layers. The density of embedded nanocrystalline Si was found to diminish in a-Si layers with annealing temperature first then increase. The results are discussed in the context of free energy change with annealing temperature. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3971-3973 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Enhanced dopant activation and elimination of end-of-range (EOR) defects in BF2+-implanted silicon-on-insulator (SOI) have been achieved by high-density current stressing. With the high-density current stressing, the implantation amorphous silicon underwent recrystallization, enhanced dopant activation and elimination of the (EOR) defects. The current stressing method allows the complete removal of EOR defects that has not been possible with conventional thermal annealing in the processing of high-performance SOI devices. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1256-1258 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron effective mass of InAlGaAs lattice matched to InP has been determined as a function of Al content. The electron effective mass is obtained from far-infrared optically detected cyclotron resonance (ODCR). In ODCR, the carriers are provided by optical pumping, and hence no doping is necessary. Unlike previous reports, we are able to detect the cyclotron resonance signal of a thin intrinsic epilayer at low temperature. Thus corrections of nonparabolicity are not required. In addition, from photoluminescence measurement, we determine the band-gap energy. Both the effective mass and band-gap energy show a nonlinear variation with Al composition. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2350-2352 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The built-in electric field and surface Fermi level in the InAlAs surface-intrinsic-n+ structures were studied by room-temperature photoreflectance. The samples were grown by molecular beam epitaxy with an undoped layer thickness of 1000 A(ring). The undoped layer was subsequently etched to 800, 600, 400, and 200 A(ring). Different chemical solutions were used in the etching process and the built-in electric field is found independent of the etching process. While the surface Fermi level, in general, varies with the undoped layer thickness, there exists, for each Al concentration, a certain range of thicknesses within which the surface Fermi level is weakly pinned. From the dependence of electric field and surface Fermi level on the undoped layer thickness, we conclude that the surface states distribute over two separate regions within the energy band gap and the densities of surface states are as low as 1.02±0.05×1011 cm−2 for the distribution near the conduction band and 2.91±0.05×1011 cm−2 for the distribution near valence band. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2543-2545 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an investigation of optical and electronic properties in InAlAs/InGaAs heterojunction bipolar transistor layers by optical detection of cyclotron resonance (ODCR). Strong ODCR spectra structured by quantum oscillations have been observed, from which the effective mass and the carrier concentration of the two-dimensional electron gas can be obtained. The measured cyclotron mass is heavier than the conduction-band-edge mass in bulk InGaAs. We find that the carrier concentration increases with the spacer thickness. Quite unexpectedly, we also find that the effective mass increases with decreasing the carrier concentration. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1595-1601 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InGaAs/GaAs (111)B quantum well p-i-n structures grown by gas source molecular beam epitaxy have been investigated with a photoreflectance technique. Using the reduced mass deduced from experiments, the built-in electric field is obtained from the above band-gap Franz–Keldysh oscillations (FKOs). The strain-induced piezoelectric field is then determined directly from the comparison of the periods of FKOs in different samples. Numerical solutions for exciton transition energies with the experimentally derived potentials are in good agreement with experimental results. Hence, the piezoelectric constant can be determined using the piezoelectric field. The temperature dependences of the quantized energy levels indicate that the influence of temperature on exciton transitions is essentially the same as that of the gaps of the relevant bulk constituent materials. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3314-3316 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the band gaps and the surface Fermi level positions of a series of In1−xAlxAs surface-intrinsic-n+ structures at room temperature by photoreflectance. Experiments demonstrated that over aluminum concentrations of 0.42–0.57, the surface Fermi level is not pinned at midgap, as commonly believed, but instead varies, respectively, from 0.50±0.01 to 0.81±0.01 eV below the conduction band edge.
    Type of Medium: Electronic Resource
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