Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
83 (1998), S. 5159-5163
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The residual defects in medium energy (40 keV) and low dose (5.0×1014/cm2) Sb ion-implanted Si after annealing at 1000 °C for 10 and 30 min have been investigated by several advanced transmission electron microscopy techniques and secondary ion mass spectroscopy. These annealing conditions give rise to the formation of two new types of residual defects: irregular shape defects with amorphous structure, and rod-shaped defects surrounded by four {1 1 1} planes which are extended to 〈1 1 0〉 directions on both sides of an initial amorphous-crystalline interface, as well as well known hexagonal Sb precipitates, depending on annealing time. It seems likely that a rod-shaped defect is grown from an irregular shape defect as a result of long annealing. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.367334
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