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  • 1
    Electronic Resource
    Electronic Resource
    Advantages of two-step annealing for 1-MeV arsenic-ion-implanted layers in silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4116-4122 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of two-step annealing, rapid thermal annealing (RTA) followed by furnace annealing (FA), on the crystalline and electrical properties of buried n-type layers formed in (100) Si by As implantation at an incident energy of 1 MeV have been investigated. The crystalline properties have been examined by Rutherford backscattering measurements and by transmission electron microscopic observations. The electrical properties have been studied by differential Hall measurements. A comparison between the annealing process of two-step annealing and that of RTA or FA alone is made. The experimental results obtained from this work clearly show that buried n+ layers without residual defects can be formed by the use of RTA at 1050 °C followed by FA at 1000 °C, and that they are difficult to be formed by one-step annealing of FA or of RTA.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348424
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  • 2
    Electronic Resource
    Electronic Resource
    Rapid thermal annealing for 1-MeV arsenic-ion-implanted layers in silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6665-6673 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rapid thermal annealing (RTA) has been carried out by using a graphite strip heater for Si substrates which are implanted with As+ ions at an incident energy of 1 MeV to a high dose of 1×1015/cm2. Annealing characteristics for As-implanted Si substrates have been investigated by Rutherford backscattering measurements and by transmission electron microscopic observations. The electrical properties for the buried n-type layer formed in the substrate during RTA have been examined by differential Hall measurements. A comparison between the annealing process of RTA and that of furnace annealing is made. The experimental results obtained from this work show clearly that the growth of secondary defects in high-energy As+-implanted layers in Si can be effectively suppressed by the use of RTA at 1050 °C, which is not the case for furnace annealing under conventional conditions, e.g., at 1000 °C for 60 min. It has been also shown that a high electrical activation of implanted As atoms is achieved by RTA at 1050 °C, resulting in the formation of a buried n-type layer with a maximum carrier concentration of around 1.5×1019/cm3. Some anomalous electrical properties have been measured in the samples treated by RTA.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348883
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  • 3
    Electronic Resource
    Electronic Resource
    Annealing characteristics and electrical properties of 1-MeV arsenic-ion-implanted layers in silicon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5555-5563 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Arsenic ions have been implanted in (100)Si at an incident energy of 1 MeV to a dose of 1×1015/cm2. Rutherford backscattering measurements with a 1.5-MeV He-ion beam have shown that a buried amorphous layer is formed in the Si substrate which is implanted at a low ion-beam current of 0.8 μA and that considerable annealing occurs when implantation is carried out at a high ion-beam current of 2 μA. The implantation-induced amorphous layer recrystallizes after annealing above 550 °C, but a high density of lattice defects still remains in the substrate even after annealing at 1000 °C. Defect observations using a cross-sectional transmission electron microscope have revealed that those defects are located at the two depths corresponding to the initial transition regions where the crystallinity is changed from the amorphous to nonamorphized states in the substrate. In addition, secondary defects also exist in a particular region inside the initial buried amorphous layer. The recrystallization of the buried amorphous layer during post-implant annealing is initiated not only from the deeper part of the substrate but also from the nonamorphized surface layer. From a series of isothermal annealing studies, it has been shown that the recrystallization rates at 550 °C are 140 and 180 A(ring)/min on the frontside and backside of the buried amorphous layer, respectively. Electrical profile measurements, using the differential Hall method, have shown that a highly doped, buried conductive layer with a peak carrier concentration of around 2×1019/cm3 can be formed by annealing above 800 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347193
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  • 4
    Electronic Resource
    Electronic Resource
    Formation of ultrashallow p+ layers in silicon by thermal diffusion of boron and by subsequent rapid thermal annealing (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1748-1750 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron atoms are incorporated into (100)Si wafers by heating the substrates at 800 °C for 30 min in a (B2H6+H2) atmosphere and by subsequent rapid thermal annealing above 900 °C. Atomic and carrier-concentration profiles of boron-doped layers have been examined by a secondary-ion mass spectrometry and by differential Hall measurements, respectively. Experimental results have clearly shown that ultrashallow p+ layers, 300 A(ring) thick, with a surface carrier concentration of 7.26×1019/cm3 can be formed by diffusion of boron at 800 °C and by subsequent RTA at 100 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105104
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  • 5
    Electronic Resource
    Electronic Resource
    Changes in tracheal tube position during laparoscopic cholecystectomy (1996)
    Oxford, UK : Blackwell Publishing Ltd
    Anaesthesia 51 (1996), S. 0 
    Details
    ISSN: 1365-2044
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: The distance from the carina to the tip of the tracheal tube was measured with a fibreoptic bronchoscope in 21 consecutive patients undergoing elective laparoscopic cholecystectomy. After placement of an Eschmann tracheal tube with a printed intubation guide mark at the vocal cords, the distance was 28 (15) [5–54]mm (mean (SD) [range]). The tube was then repositioned so that the distance was 34 (3) [30–40]mm from tip of the tube to the carina. After creation of pneumoperitoneum, the distance was significantly decreased to 26 (5) [17–35] mm (p 〈 0.005), which was not significantly altered by subsequent moving of the patient to the reverse Trendelenburg and left lateral tilt position. The maximum distance of tube migration was 8 (4) [0–15]mm. Four out of 21 patients would have been at risk of bronchial intubation after pneumoperitoneum if the tube had not been repositioned. Placement of the tube according to the guide mark is not recommended for laparoscopic cholecystectomy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2044.1996.tb12609.x
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  • 6
    Electronic Resource
    Electronic Resource
    Are the two long prongs of the Mallinckrodt double-lumen endobronchial tube necessary? (1995)
    Oxford, UK : Blackwell Publishing Ltd
    Anaesthesia 50 (1995), S. 0 
    Details
    ISSN: 1365-2044
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2044.1995.tb06176.x
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  • 7
    Electronic Resource
    Electronic Resource
    Effects of nitrous oxide on haemodynamic and electroencephalographic responses induced by tetanic electrical stimulation during propofol anaesthesia (1999)
    Oxford : Blackwell Science Ltd
    Anaesthesia 54 (1999), S. 0 
    Details
    ISSN: 1365-2044
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: We studied the effect of nitrous oxide on haemodynamic and electroencephalographic responses caused by noxious stimulation during propofol anaesthesia. Thirty-four patients (ASA I–II) were anaesthetised with propofol 3 mgkg−1 and were randomly allocated to receive either 60% nitrous oxide in oxygen or 40% oxygen in air. Anaesthesia was maintained using propofol infusion of 10 mgkg−1.h−1 for the first 10 min, 8 mgkg−1.h−1 for the next 10 min and 6 mgkg−1.h−1 thereafter. Thirty minutes after the induction of anaesthesia, tetanic electrical stimulation (80 mA, 100 Hz) was applied to the ulnar nerve. Tetanic stimulation significantly increased blood pressure and heart rate in both groups (p 〈 0.005 or less), but did not induce any arousal pattern on the electroencephalograph. Nitrous oxide significantly attenuated the tetanic stimulation-induced increase in blood pressure (p 〈 0.05 or less), but not the heart rate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2044.1999.00752.x
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  • 8
    Electronic Resource
    Electronic Resource
    Effect of propofol and isoflurane anaesthesia on the immune response to surgery (2004)
    Oxford, UK : Blackwell Science Ltd
    Anaesthesia 59 (2004), S. 0 
    Details
    ISSN: 1365-2044
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: There are two major subpopulations of peripheral helper T lymphocytes: T helper 1 (Th1) and T helper 2 (Th2) cells. Surgical stress increases the number of Th2 cells, and decreases that of Th1 cells, resulting in a decrease in the Th1/Th2 ratio, and, consequently, in suppressed cell-mediated immunity. Since anaesthesia can suppress the stress response to surgery, it may inhibit the decrease in the Th1/Th2 ratio. Using flow cytometry, we studied whether propofol anaesthesia (n = 9) or isoflurane anaesthesia (n = 9) had more effect on the decrease in the Th1/Th2 ratio after surgery in patients undergoing craniotomy. The Th1/Th2 ratio decreased significantly after isoflurane anaesthesia (p = 0.011), while it did not change after propofol anaesthesia. The ratio was significantly lower with isoflurane than propofol (p = 0.009). Propofol anaesthesia attenuated the surgical stress-induced adverse immune response better than isoflurane anaesthesia.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2044.2004.03837.x
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  • 9
    Electronic Resource
    Electronic Resource
    A reply (2000)
    Oxford, UK : Blackwell Science Ltd
    Anaesthesia 55 (2000), S. 0 
    Details
    ISSN: 1365-2044
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2044.2000.01479-24.x
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  • 10
    Electronic Resource
    Electronic Resource
    Electroencephalographic arousal response during tracheal intubation and laryngeal mask airway insertion after induction of anaesthesia with propofol (1999)
    Oxford : Blackwell Science Ltd
    Anaesthesia 54 (1999), S. 0 
    Details
    ISSN: 1365-2044
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Laryngoscopy and tracheal intubation, or insertion of a laryngeal mask airway may lead to an arousal response on the electroencephalogram. We studied whether more intense stimulation (laryngoscopy and tracheal intubation) causes a greater arousal response than less intense stimulation (laryngeal mask airway insertion). Thirty-four patients (ASA I–II) were anaesthetised with propofol 3 mg.kg−1, followed by vecuronium 0.15 mg.kg−1 and a propofol infusion of 10 mg.kg−1.h−1. Three minutes after induction of anaesthesia, either laryngoscopy and tracheal intubation (n = 18), or laryngeal mask airway insertion (n = 16) was performed. Laryngoscopy and tracheal intubation caused a significantly greater increase in blood pressure (but not heart rate) than laryngeal mask airway insertion (p 〈 0.05). Electroencephalogram responses were not different. More intense stimulation does not cause a greater arousal response during propofol anaesthesia.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2044.1999.00944.x
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