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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4023-4025 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sputtered Co94−xZr6Mox (4.4≤x≤17 at. %) films have been investigated as a soft-adjacent-layer (SAL) material for trilayered magnetoresistive (MR) sensors with a MR element layer, a current shunt layer, and a SAL for biasing layer. The saturation magnetization 4πMs linearly decreases from 14 to 3 kG with an increase in Mo content. The magnetic anisotropy field Hk decreases to a low value, equivalent to that for NiFe MR films, as the Mo content is increased. The magnetoresistance ratio Δρ/ρ is negative, but sufficiently small, namely one-hundredth of that for NiFe films, while the electrical resistivity ρ, about 140 μΩ cm, is 5.6 times greater than that for NiFe films. The films also have a small magnetostriction coefficient λs on the order of 10−7. A 500-A(ring)-thick CoZrMo film with 12 at. % Mo content is selected as the SAL, because a lesser thickness causes an extreme increase in Hk. Higher Mo content degrades the temperature characteristics of the magnetic properties, due to the lower Curie temperature. Trilayered MR-sensors, 100 μm in length and 10 μm in width, are fabricated with a 400-A(ring)-thick NiFe MR layer, a 400-A(ring)-thick Ti layer, and a SAL using this CoZrMo film. An excellent biasing level is achieved with a 15-mA sense current on the MR sensors. CoZrMo amorphous films have a superior capability as a SAL material, especially for the trilayered MR sensors.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4847-4850 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A narrow-gap shielded magnetoresistive (MR) head with a 8-μm track width has been constructed for high-density magnetic recording. The head consists of a pair of NiFe shields and a trilayered MR element between the shields. In the MR element NiFe, Ti, and amorphous CoZrMo films are used. The thickness of the three layers and the shields, as well as the shield gap length, are optimized with a one-dimensional self-consistent calculation. The shielded MR head has been fabricated using calculated thickness parameters for individual layers: 60 nm for CoZrMo with 40 nm NiFe and 20 nm Ti, 1-μm shields, and 0.5 μm for the total shield gap. The reproduced characteristics from the MR head are evaluated with a plated disk. Neither Barkhausen noise nor distortion is observed in the output waveform. The output voltage is 600 μVpp at a 4 mA/μm sense current with 30 kFCI transition density. The D50 transition density is 40 kFCI. These values are in good agreement with the calculated values. Assuming a 12-μm track pitch, crosstalk is −29 dB from off-track crosstalk characteristics. This shielded MR head has a potential to achieve high recording density with 40 kBPI and 2000 TPI for small-size disk drives.
    Type of Medium: Electronic Resource
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