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  • 1
    Electronic Resource
    Electronic Resource
    DNA Vaccination Using Bacillus Calmette-Guerin-DNA as an Adjuvant to Enhance Immune Response to Three Kinds of Swine Diseases (2005)
    Oxford, UK; Malden, USA : Blackwell Science Ltd
    Scandinavian journal of immunology 62 (2005), S. 0 
    Details
    ISSN: 1365-3083
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: In order to enhance the immune efficacy of DNA vaccination, experiments were conducted to investigate the regulating effects of Bacillus Calmette-Guerin (BCG)-DNA as an adjuvant on immune responses of mice against foot-and-mouth disease (FMD), Aujeszky's disease (AjD) and classical swine fever (CSF). BCG-DNA was purified from BCG by ion-exchange chromatography. Three DNA vaccines (pVSG, pVgD and pVE2) against the respective infection were constructed, and BCG-DNA was coimmunized to mice by muscle injection. The results showed that titres of specific immunoglobulin (Ig)G to the vaccines mounted remarkably in the sera of the adjuvant covaccinated mice (P 〈 0.01). Antibody isotype IgG2a and IgG1 also increased, respectively, in mice coimmunized with BCG-DNA compared with those of the control groups (P 〈 0.01). Cellular immune cytokine interferon-γ and cytotoxic T lymphocytes were detected in coimmunized BCG-DNA groups (P 〈 0.05). Whereas interleukin-4, humoral immune cytokine, was not significant (P 〉 0.05). These results suggest that codelivery of BCG-DNA with DNA vaccines against FMD, AjD and CSF can enhance the induction of antigen-specific, especially, cell-mediated immunity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-3083.2005.01674.x
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  • 2
    Electronic Resource
    Electronic Resource
    Instability of a GexSi1−xO2 film on a GexSi1−x layer (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4444-4446 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stability of an amorphous GexSi1−xO2 in contact with an epitaxial (100)GexSi1−x layer obtained by partially oxidizing an epitaxial GexSi1−x layer on a (100)Si substrate in a wet ambient at 700 °C is investigated for x=0.28 and 0.36 upon annealing in vacuum at 900 °C for 3 h, aging in air at room temperature for 5 months, and immersion in water. After annealing at 900 °C, the oxide remains amorphous and the amount of GeO2 in the oxide stays constant, but some small crystalline precipitates with a lattice constant similar to that of the underlying GeSi layer emerge in the oxide very near the interface for both x. Similar precipitates are also observed after aging for both x. The appearance of these precipitates can be explained by the thermodynamic instability of GexSi1−xO2 in contact with GexSi1−x. In water at RT, 90% of GeO2 in the oxide is dissolved for x=0.36, while the oxide remains conserved for x=0.28.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352211
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  • 3
    Electronic Resource
    Electronic Resource
    Study of Si/GeSi p-n heterostructures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6674-6678 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The experimental results of a molecular-beam epitaxy grown Si/GeSi p-n heterojunction are reported. It is found that the current flow in these p-n heterojunctions shows a nonideality factor of about 1.5 at room temperature and 2.35 at liquid nitrogen temperature. The nonideal behavior of the Si/GeSi p-n heterojunction is attributed to the charges that are trapped at the heterointerface. Annealing the samples at temperatures higher than the growth temperature results in an increase in the density of defects as well as an increase in the nonideal current. C-V measurements were employed to further investigate the behavior of the charges that are trapped in the interface. From C-V measurements under reverse bias it is found that increasing the annealing time and temperature increases the density of interface traps. In addition, a charge density of about 1012 cm−2 is found to be present at the Si/GeSi interface for the as-grown sample and increases with increasing annealing time and temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348884
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  • 4
    Electronic Resource
    Electronic Resource
    Ion-beam-assisted deposition of ferroelectric PbTiO3 films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2896-2899 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric PbTiO3 films were deposited by ion-beam-assisted deposition (O2+Ar 75–150 eV). The effects of ion bombardment on the Pb/Ti ratio and the structures of the film are discussed. For a given target-substrate distance and substrate temperature, the Pb/Ti ratio decreased with increasing bombarding beam energy. Compared with the films deposited without ion bombardment, the deposition rate was increased under ion bombardment, which is attributed to an increase in the surface reaction rate. The crystal grains are larger for films deposited under ion bombardment, which implies that ion bombardment enhances the surface mobility of adatoms and hence the growth kinetics of the growing films. Dielectric and ferroelectric properties of the as-deposited films are also reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354644
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  • 5
    Electronic Resource
    Electronic Resource
    Structural characterization of SimGen strained layer superlattices (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4305-4313 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SimGen strained layer superlattice (SLS) structures were grown by molecular beam epitaxy on GexSi1−x buffer layers on 〈100〉 Si substrates to determine the effects of buffer layer composition, SLS thickness ratio, and superlattice periodicity, on the overall quality of these structures. X-ray diffraction methods were used to determine how closely actual periodicities and compositions met targeted values, and to evaluate the quality of these samples. In most instances the as-grown structures matched the targeted values to within 10%, though in some instances deviations of 20–25% in either the period or composition were observed. The quality of the SLS structures was greatly dependent on the composition of the buffer layer on which it was grown. SimGen SLS structures grown on Si- and Ge-rich buffer layers were of much higher quality than SimGem SLSs grown on Ge0.50Si0.50 layers, but the x-ray rocking curves of the SimGen samples indicated that they were far from perfect and contained moderate levels of defects. These results were confirmed by cross sectional transmission electron microscopy, which showed that the SimGem structures contained significant numbers of dislocations and that the layers were nonuniform in thickness and wavy in appearance. SimGen structures, however, displayed fewer defects but some dislocations and nonparallelism of layers were still observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350812
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  • 6
    Electronic Resource
    Electronic Resource
    Importance of sample preheating in oxidation of GexSi1−x (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3626-3627 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Wet thermal oxidation at 1000 °C of a 470-nm-thick epitaxial Ge0.36Si0.64 layer on (100)Si produces oxides of different composition depending on the details of the oxidation procedure. When a cold sample is directly exposed to the hot steam, the surface layer of the oxide contains both Ge and Si. Only SiO2 forms if a preheated sample is exposed to the hot steam. The effect is not present for dry oxidation and is attributed to the known enhancement of the wet oxidation rate by Ge, coupled with the transient warm up of a sample when it is immersed cold in hot steam.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350922
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  • 7
    Electronic Resource
    Electronic Resource
    Amorphous phase transition mechanism by the mechanical alloying of the Fe–W system (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1967-1971 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Fe–W binary system exhibits a zero heat of mixing in the amorphous state. Thus, there is no chemical driving force for the crystal-to-amorphous transformation. However, the crystal-to-amorphous transition was observed in a mechanically alloyed mixture of pure Fe and W powders. A structural study by x-ray diffraction showed that supersaturated solid solutions of W in Fe [Fe(W) SSS] and Fe in W [W(Fe) SSS] were produced during the early stage of the mechanical alloying. Iron atoms were already totally involved in the solid-state amorphization reaction after 24 h of milling. The end products were W(Fe) SSS and amorphous Fe–W alloy. The amorphization by mechanical alloying of the Fe–W system is attributed to a solid-state amorphization reaction in which lattice distortion induced by supersaturation of W in Fe and a refinement of grain size may raise the free energy of Fe(W) SSS above that of the amorphous phase and make the Fe(W) SSS destabilize.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351192
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  • 8
    Electronic Resource
    Electronic Resource
    Investigation of crystallization of a mechanically alloyed Sm-Fe alloy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 6146-6149 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystallization of a mechanically alloyed Sm-Fe alloy was investigated. The results show that the Sm-Fe alloy prepared by mechanical alloying consists of amorphous Sm-Fe phase and crystalline α-Fe phase. The composition of the alloy is inhomogeneous, i.e., the surface of the as-milled powder is relatively poor in iron. The crystallization process involves the long-range diffusion of iron atoms and solid state reaction. After proper crystallization, the as-milled powder transforms into a Sm2Fe17 phase completely; no distinguishable crystalline α-Fe phase can be found. A metastable phase, which may be a Sm2Fe17 phase with the structure of hexagonal Th2Ni17 type, appears during the crystallization process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350423
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  • 9
    Electronic Resource
    Electronic Resource
    Investigation of the amorphization reaction induced by amorphous phase through mechanical milling (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7158-7160 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the study of the amorphization reaction induced by the amorphous phase through mechanical milling (MM). The amorphous iron-based powders (Fe78Si12B10) and elemental Al powders were mechanically milled in a planetary ball mill. X-ray diffraction, differential scanning calorimetry, and transmission electron microscopy were used to investigate the MM processes. Results showed that the Al atoms dissolved into the amorphous iron-based phase (Fe78Si12B10) and an Al-rich amorphous phase was produced.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350366
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  • 10
    Electronic Resource
    Electronic Resource
    Damage and strain in epitaxial GexSi1−x films irradiated with Si (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6039-6045 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The damage and strain induced by irradiation of both relaxed and pseudomorphic GexSi1−x films on Si(100) with 100 keV 28Si ions at room temperature have been studied by MeV 4He channeling spectrometry and x-ray double-crystal diffractometry. The ion energy was chosen to confine the major damage to the films. The results are compared with experiments for room temprature Si irradiation of Si(100) and Ge(100). The maximum relative damage created in low-Ge content films studied here (x=10%, 13%, 15%, 20%, and 22%) is considerably higher than the values obtained by interpolating between the results for relative damage in Si-irradiated single crystal Si and Ge. This, together with other facts, indicates that a relatively small fraction of Ge in Si has a significant stabilizing effect on the retained damage generated by room-temperature irradiation with Si ions. The damage induced by irradiation produces positive perpendicular strain in GexSi1−x, which superimposes on the intrinsic positive perpendicular strain of the pseudomorphic or partially relaxed films. In all of the cases studied here, the induced maximum perpendicular strain and the maximum relative damage initially increase slowly with the dose, but start to rise at an accelerated rate above a threshold value of ∼0.15% and 15%, respectively, until the samples are amorphized. The pre-existing pseudomorphic strain in the GexSi1−x film does not significantly influence the maximum relative damage created by Si ion irradiation for all doses and x values. The relationship between the induced maximum perpendicular strain and the maximum relative damage differs from that found in bulk Si(100) and Ge(100).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355219
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