ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
There is a need for semiconductor junctions with very low leakage for energy conversion from low level radioactive or radio-luminescent sources, and low noise blue-green photodiodes. We report the properties of two types of GaP junctions; a Schottky barrier of Pd on liquid phase epitaxy grown n-type GaP and a p+ over n junction grown by metal-organic chemical vapor deposition. Both types of junctions show very low leakage currents and good efficiency for power conversion from low level beta particles, x rays, and blue-green light.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.348858
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