Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
87 (2000), S. 6061-6063
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Advances in reducing the resistance and enhancing the magnetoresistance (MR%) of the magnetic tunnel junction (MTJ) material has made it useful for magnetoresistive random access memory as well as magnetic field sensing applications. One of the most important aspects for producing the MTJ material is the method used for forming the tunnel barrier, and its impact on the properties of MTJ such as resistance and area product (RA), MR%, and RA uniformity across a large area. We have explored forming the aluminum oxide tunnel barrier with air; reactive sputtering; plasma oxidation with plasma source; plasma oxidation with power introduced from the target side; and plasma oxidation with power introduced from the substrate side. Our results show that all techniques can be made to work. Plasma oxidation is favored due to its simplicity and manufacturing compatibility. It was also discovered that different oxidation methods used in this study caused little difference in MTJ resistance uniformity. The latter is mainly determined by the Al metal-thickness uniformity. Modeling based on Simmons' theory supports our experimental finding. This illustrates the importance in improving Al metal-film uniformity for producing MTJ with ultra-uniform resistance. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.372612
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