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  • 1
    Electronic Resource
    Electronic Resource
    Electron emission from diamond coated silicon field emitters (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2842-2844 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline diamond thin films have been formed on single crystal silicon field emitters using bias-enhanced nucleation in a microwave plasma chemical vapor deposition system. A diamond nucleation density greater than 1010/cm2 with small grain sizes (〈25 nm) was achieved on the surfaces of silicon emitters with nanometer scale curvature. Field emission from these diamond coated silicon emitters exhibited significant enhancement compared to the pure Si emitters both in total emission current and stability. Using a Fowler–Nordheim analysis a very large effective emitting area of nearly 10−11 cm2 was obtained from the diamond coated Si emitters compared to that of uncoated Si emitters (10−16 cm2). This area was found to be comparable to the entire tip surface area. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112538
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Electron emission from a hydrogenated diamond surface (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4038-4040 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron emission from a polycrystalline diamond coated silicon field emitter surface was studied using in situ exposure to various gas species during its operation. Significant enhancement of the electron emission was found after the emitting surface was exposed to hydrogen at pressures in the range 5×10−4 to 10−3 Torr. Introducing other gases such as Ne and He only suppressed the emission current. A continuous emission current was measured from such a hydrogen-exposed surface even after the electric field was reduced to below the initial threshold for electron emission. No similar result was found for pure silicon surface when identical conditions applied. This phenomenon was interpreted as the formation of a dynamically vacuum-stable layer by polarized hydrogen and the diamond surface. Such a surface layer may significantly lower the surface barrier and exhibit the negative electron affinity property. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117863
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    Paper (German National Licenses)
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