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  • 1
    Electronic Resource
    Electronic Resource
    Electron emission from diamond coated silicon field emitters (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2842-2844 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline diamond thin films have been formed on single crystal silicon field emitters using bias-enhanced nucleation in a microwave plasma chemical vapor deposition system. A diamond nucleation density greater than 1010/cm2 with small grain sizes (〈25 nm) was achieved on the surfaces of silicon emitters with nanometer scale curvature. Field emission from these diamond coated silicon emitters exhibited significant enhancement compared to the pure Si emitters both in total emission current and stability. Using a Fowler–Nordheim analysis a very large effective emitting area of nearly 10−11 cm2 was obtained from the diamond coated Si emitters compared to that of uncoated Si emitters (10−16 cm2). This area was found to be comparable to the entire tip surface area. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112538
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  • 2
    Electronic Resource
    Electronic Resource
    The origin of the broadband luminescence and the effect of nitrogen doping on the optical properties of diamond films (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3020-3027 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman and various photoluminescence (PL) techniques were employed to investigate the role of nitrogen doping on the optical spectra of chemical-vapor-deposited (CVD) diamond films and to determine the origin of the characteristic broadband luminescence which is observed from approximately 1.5 to 2.5 eV and centered at ∼2 eV. The PL transitions attributed to the zero-phonon lines (ZPL) of nitrogen centers are observed at 1.945 and 2.154 eV. A new possible nitrogen center at 1.967 eV is also observed as well as the band A luminescence centered at ∼2.46 eV. The experimental results preclude the possibility of the broadband PL being due to electron-lattice interaction of the nitrogen ZPL centers. We establish the presence of an in-gap state distribution in CVD diamond films attributed to the sp2 disordered phase and show that its optical transitions are the likely cause of the broadband luminescence. A model of the in-gap state distribution is presented which is similar to models previously developed for amorphous materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357508
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  • 3
    Electronic Resource
    Electronic Resource
    Electron emission mechanism from cubic boron nitride-coated molybdenum emitters (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2909-2911 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The energy distribution of field-emitted electrons from Mo tips coated with intrinsic cubic boron nitride (c-BN) was studied in an effort to determine the origin of the emitted electrons. Voltage-dependent field-emission energy distribution (V-FEED) spectra were collected from the Mo emitters under ultra-high-vacuum conditions both before and after being coated. Emission current at a given voltage increased by as much as two orders of magnitude for the c-BN-coated emitters relative to bare emitters. The energy of field-emitted electrons from the c-BN-coated emitters was linearly dependent upon the applied voltage. Extrapolation of V-FEED data from c-BN-coated emitters to the flatband condition evidenced that the electrons were emitted from the conduction-band minimum of the c-BN coating at the c-BN/vacuum interface. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121492
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  • 4
    Electronic Resource
    Electronic Resource
    Energy distribution of field emitted electrons from diamond coated molybdenum tips (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1596-1598 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Field emission energy distribution (FEED) measurements were performed on Mo and diamond coated Mo tips under ultrahigh vacuum conditions to investigate the origin of field emitted electrons. Mo emitters were prepared by electrochemical etching and were subsequently coated with diamond powder by a dielectrophoretic procedure. Field emission energy spectra were taken on the same samples before and after diamond coating. In vacuo thermal annealing of coated samples was essential to obtain stable field emission. FEED data indicated that the field emission current originated from the diamond/vacuum interface, and that electrons were emitted from the conduction band minimum of diamond. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118626
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  • 5
    Electronic Resource
    Electronic Resource
    Bias voltage dependent field-emission energy distribution analysis of wide band-gap field emitters (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5763-5772 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the origin of field emission from wide band-gap semiconductors by a combination of voltage dependent field-emission energy distribution and I–V measurements. For this purpose, tip-shaped molybdenum emitters were coated with 100–1000 nm thick layers of nominally undoped diamond and cubic boron nitride (c-BN) powders. Electron energy spectra revealed that significant band bending occurred due to field penetration into wide band-gap materials. Voltage drops on the order of several volts were measured across the coatings, for applied voltages on the order of 1 kV, and a cathode–gate distance of 500 μm. These voltage drops showed a linear dependence with the applied bias voltage for well-annealed diamond coatings and a strongly nonlinear behavior for unannealed diamond and c-BN coatings. In general, annealing of diamond coated Mo tips led to improved emission current stability and lower "turn-on" voltages due to the removal of oxide and the formation of conductive carbide layers between the metal and semiconductor. From the extrapolation of the linear behavior to the flat-band condition, we concluded that the emission from diamond, as well as c-BN, originated from the conduction-band minimum. Nonlinear behavior was attributed to positive space-charge accumulation at the field-emitting surface, which arose due to electron depletion by field emission from wide band-gap material. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366442
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  • 6
    Electronic Resource
    Electronic Resource
    Bias-enhanced nucleation of highly oriented diamond on titanium carbide (111) substrates (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2810-2812 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The bias-enhanced nucleation (BEN) technique has been applied to TiC(111) substrates and resulted in deposition of oriented diamond particles. The orientation was observed via scanning electron microscopy. A dense region of oriented particles was not observed on the samples, presumably due to the excessive twinning of the diamond. However, micrographs taken throughout the substrate showed diamond particles having similar orientation with respect to each other. Some of the diamond particles showed evidence of azimuthal twist and tilting, resulting most likely from the ∼21% lattice mismatch. Raman spectra of the diamond crystals show a strong feature at 1332 cm−1, which is indicative of diamond, and smaller features at 1480 and 1602 cm−1 due to sp2-bonded carbon. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113483
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