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  • 1
    Electronic Resource
    Electronic Resource
    High-voltage electroosmosis. Pressure-voltage behavior in the system .gamma.-alumina-2-propanol (1974)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 78 (1974), S. 65-69 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100594a013
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Study of Si/GeSi p-n heterostructures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6674-6678 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The experimental results of a molecular-beam epitaxy grown Si/GeSi p-n heterojunction are reported. It is found that the current flow in these p-n heterojunctions shows a nonideality factor of about 1.5 at room temperature and 2.35 at liquid nitrogen temperature. The nonideal behavior of the Si/GeSi p-n heterojunction is attributed to the charges that are trapped at the heterointerface. Annealing the samples at temperatures higher than the growth temperature results in an increase in the density of defects as well as an increase in the nonideal current. C-V measurements were employed to further investigate the behavior of the charges that are trapped in the interface. From C-V measurements under reverse bias it is found that increasing the annealing time and temperature increases the density of interface traps. In addition, a charge density of about 1012 cm−2 is found to be present at the Si/GeSi interface for the as-grown sample and increases with increasing annealing time and temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348884
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  • 3
    Electronic Resource
    Electronic Resource
    Atomic transport in thermal spike induced ion mixing (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4292-4296 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple relationship between the ratio of atomic transport induced by ion mixing and the activation energies for the impurity diffusion of constituents in a bilayer is presented to describe quantitatively the symmetric and asymmetric atomic transport in the thermal spike induced ion mixing. The model predicts fairly satisfactorily the trend of experimental observations in the bilayer systems which have near zero heats of mixing and relatively high spike activation energies. For instance, the Pd/Co bilayer system shows nearly symmetric atomic transport, since its constituents have similar activation energies for the impurity diffusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352811
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  • 4
    Electronic Resource
    Electronic Resource
    Photoluminescence and photoluminescence excitation studies on GaAs/Al0.25Ga0.75As asymmetric coupled double quantum well (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3475-3478 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) and PL excitation (PLE) experiments on a GaAs/Al0.25Ga0.75As asymmetric coupled double quantum well are reported. In PLE, the seven peaks, four related to the heavy-hole coupled and the rest to the light-hole coupled excitonic states, are observed. The positions of seven peaks observed in PLE are in good agreement with the calculated results of multi-band envelope function approximation using the transfer matrix method. The result of the temperature-dependent PL above 100 K shows that, even though the wavefunctions are localized in different wells separated by 8 monolayer barrier, the heavy-hole coupled excitons in the two lowest levels are in thermal equilibrium. The observed activation energy is equal to the difference between the two levels.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354524
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  • 5
    Electronic Resource
    Electronic Resource
    Numerical and experimental studies of the intrinsic performance of AlInAs/GaInAs heterojunction bipolar transistors (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4426-4430 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper discusses selected design issues important to the operation of high-speed AlInAs/GaInAs heterojunction bipolar transistors (HBTs). Simulation results reveal that velocity overshoot is an important effect in AlInAs/GaInAs HBTs. It is found to first order that the electron average speed through the base and base/collector depletion region is near 5×107 cm/s. Introduction of a built-in electric field in the base region improves the ft. However, the resultant improvement of the cutoff frequency in the AlInAs/GaInAs HBT is not as significant as in the AlGaAs/GaAs HBT because of the already larger electron velocity in the GaInAs base. Compositional grading in the emitter is not suggested in AlInAs/GaInAs HBTs because it degrades the dc and ac characteristics. The effects of a base setback layer at the emitter/base junction on dc current gain and cutoff frequency have also been studied. It is found that both the doping density and the thickness of the setback layer affect the cutoff frequency, and that the setback layer always degrades the intrinsic performance. The intrinsic setback layer has the lowest cutoff frequency while p-doped setback layer has the highest one.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348369
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  • 6
    Electronic Resource
    Electronic Resource
    Neutral beam probe for edge plasma analysis in tokamaks (abstract) : Eighth topical conference on high—temperature plasma diagnostics (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 2987-2987 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A neutral beam diagnostic system has been designed to do simultaneous space potential and density measurements in the tokamak plasma edge to complement existing probe diagnostics. Rapid radial profiles are possible by computer control of the energy and the injection angle of the neutral beam. A particular application under consideration is the Tokamak de Varennes, which is presently being upgraded to operate either as a limiter or as a divertor machine. In this application, an ion gun is used to produce a Tl+1 beam that can be steered radially and toroidally to scan the plasma edge. The ion beam is neutralized downstream in a charge-exchange cell and the resulting Tl neutral beam is injected through a side port into the plasma. Singly charged Tl ions produced in the plasma exit through a top port of the tokamak and are collected by an electrostatic energy analyzer. Numerical simulations of the trajectories show that beam energies between 40 and 55 keV are sufficient to probe the plasma edge radially from 23 to 29 cm with a few millimeters resolution. The use of a neutral beam allows measurements in a tokamak edge plasma with BT∼1.0 T with a reduction in beam energy by more than a factor of 3 compared to the use of ion beams. Details of the beam probe hardware and the Tokamak de Varennes application are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141754
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  • 7
    Electronic Resource
    Electronic Resource
    Neutral beam probe for edge plasma analysis in tokamaks (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 3528-3531 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A neutral beam diagnostic system has been designed to do simultaneous space potential and density measurements in the tokamak plasma edge to complement existing probe diagnostics. Rapid radial profiles are possible by computer control of the energy and the injection angle of the neutral beam. A particular application under consideration is the Tokamak de Varennes, which is presently being upgraded to operate either as a limiter or as a divertor machine. In this application, an ion gun is used to produce a Tl+1 beam that can be steered radially and toroidally to scan the plasma edge. The ion beam is neutralized downstream in a charge-exchange cell and the resulting Tl neutral beam is injected through a side port into the plasma. Singly charged Tl ions produced in the plasma exit through a top port of the tokamak and are collected by an electrostatic energy analyzer. Numerical simulations of the trajectories show that beam energies between 40 and 55 keV are sufficient to probe the plasma edge radially from 23 to 29 cm with a few millimeters resolution. The use of a neutral beam allows measurements in a tokamak edge plasma with BT∼1.0 T with a reduction in beam energy by more than a factor of 3 compared to the use of ion beams. Details of the beam probe hardware and the Tokamak de Varennes application are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141563
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    Paper (German National Licenses)
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  • 8
    Electronic Resource
    Electronic Resource
    A drop-tube apparatus to promote spherically symmetric evaporation and combustion of unsupported droplets (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 3029-3036 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Fluid-mechanical aspects of a unique drop-tube apparatus to promote spherically symmetric evaporation and combustion of freely falling droplets are discussed. Design of the apparatus is based upon the principle that gravitationally induced pressure gradients in gases may be significantly reduced by accelerating the gases with properly contoured tubes. Droplets traveling with the gases will experience greatly reduced buoyancy and forced convection environments, promoting spherical symmetry. For specification of tube contours, the Navier–Stokes and continuity equations are recast into a vorticity-stream function formulation and solved numerically with pseudospectral methods. Axisymmetric tube contours which produce desired velocity and pressure fields are found, and implications for designs and limits of experimental apparatus are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142520
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  • 9
    Electronic Resource
    Electronic Resource
    Chorioangioma of the placenta: an ultrasonic study (1982)
    Oxford, UK : Blackwell Publishing Ltd
    BJOG 89 (1982), S. 0 
    Details
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-0528.1982.tb03641.x
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  • 10
    Electronic Resource
    Electronic Resource
    Interface properties of thin oxides grown on strained GexSi1−x layer (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 982-986 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical and chemical properties of the interfaces of thin oxides grown on strained GexSi1−x layers are analyzed in detail using capacitance-voltage measurements and Auger electron spectroscopy. It is found that the electrical properties (interface states and fixed oxide charges) of the interface depend on various parameters such as oxidation temperature, oxidation time, Ge distribution near the interface, and Ge distribution in the entire epilayer. The Ge distribution at the interface can be described using concentration-dependent diffusivity of Ge in the epilayer. The electrical properties are improved with the increase in oxidation temperature, but for a given oxidation temperature, the quality of the interface degrades with the increase in oxidation time. At a very high oxidation temperature the Ge distribution in the entire epilayer is altered due to the high diffusivity of Ge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357776
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