Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    An emission study with a moderate power radio frequency Grimm-type glow discharge source
    Amsterdam : Elsevier
    Spectrochimica Acta Part B: Atomic Spectroscopy 49 (1994), S. 915-924 
    Details
    ISSN: 0584-8547
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0584-8547(94)80080-4
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence and photoluminescence excitation studies on GaAs/Al0.25Ga0.75As asymmetric coupled double quantum well (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3475-3478 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) and PL excitation (PLE) experiments on a GaAs/Al0.25Ga0.75As asymmetric coupled double quantum well are reported. In PLE, the seven peaks, four related to the heavy-hole coupled and the rest to the light-hole coupled excitonic states, are observed. The positions of seven peaks observed in PLE are in good agreement with the calculated results of multi-band envelope function approximation using the transfer matrix method. The result of the temperature-dependent PL above 100 K shows that, even though the wavefunctions are localized in different wells separated by 8 monolayer barrier, the heavy-hole coupled excitons in the two lowest levels are in thermal equilibrium. The observed activation energy is equal to the difference between the two levels.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354524
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Interface properties of thin oxides grown on strained GexSi1−x layer (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 982-986 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical and chemical properties of the interfaces of thin oxides grown on strained GexSi1−x layers are analyzed in detail using capacitance-voltage measurements and Auger electron spectroscopy. It is found that the electrical properties (interface states and fixed oxide charges) of the interface depend on various parameters such as oxidation temperature, oxidation time, Ge distribution near the interface, and Ge distribution in the entire epilayer. The Ge distribution at the interface can be described using concentration-dependent diffusivity of Ge in the epilayer. The electrical properties are improved with the increase in oxidation temperature, but for a given oxidation temperature, the quality of the interface degrades with the increase in oxidation time. At a very high oxidation temperature the Ge distribution in the entire epilayer is altered due to the high diffusivity of Ge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357776
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Study of Si/GeSi p-n heterostructures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6674-6678 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The experimental results of a molecular-beam epitaxy grown Si/GeSi p-n heterojunction are reported. It is found that the current flow in these p-n heterojunctions shows a nonideality factor of about 1.5 at room temperature and 2.35 at liquid nitrogen temperature. The nonideal behavior of the Si/GeSi p-n heterojunction is attributed to the charges that are trapped at the heterointerface. Annealing the samples at temperatures higher than the growth temperature results in an increase in the density of defects as well as an increase in the nonideal current. C-V measurements were employed to further investigate the behavior of the charges that are trapped in the interface. From C-V measurements under reverse bias it is found that increasing the annealing time and temperature increases the density of interface traps. In addition, a charge density of about 1012 cm−2 is found to be present at the Si/GeSi interface for the as-grown sample and increases with increasing annealing time and temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348884
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Numerical and experimental studies of the intrinsic performance of AlInAs/GaInAs heterojunction bipolar transistors (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4426-4430 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper discusses selected design issues important to the operation of high-speed AlInAs/GaInAs heterojunction bipolar transistors (HBTs). Simulation results reveal that velocity overshoot is an important effect in AlInAs/GaInAs HBTs. It is found to first order that the electron average speed through the base and base/collector depletion region is near 5×107 cm/s. Introduction of a built-in electric field in the base region improves the ft. However, the resultant improvement of the cutoff frequency in the AlInAs/GaInAs HBT is not as significant as in the AlGaAs/GaAs HBT because of the already larger electron velocity in the GaInAs base. Compositional grading in the emitter is not suggested in AlInAs/GaInAs HBTs because it degrades the dc and ac characteristics. The effects of a base setback layer at the emitter/base junction on dc current gain and cutoff frequency have also been studied. It is found that both the doping density and the thickness of the setback layer affect the cutoff frequency, and that the setback layer always degrades the intrinsic performance. The intrinsic setback layer has the lowest cutoff frequency while p-doped setback layer has the highest one.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348369
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Bimodal roughness of heterointerface in quantum wells analyzed by photoluminescence excitation spectroscopy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 338-340 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence excitation (PLE) studies were performed on GaAs-Al0.25Ga0.75As quantum wells (QWs) with fractional monolayer differences. The quantized PLE peaks and their submonolayer shifts clearly show that the heterointerface of thin QWs prepared by growth-interrupted molecular beam epitaxy has islands which extend out a lateral dimension larger than 100 A(ring), but they themselves have the microroughness smaller than 30 A(ring). The result of this work using exciton as the probe provides a clear evidence supporting the bimodal roughness model. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114205
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Thick AlxGa1−xAs: An intrinsically percolating barrier owing to its microscopic structural inhomogeneity (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2513-2515 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A significant charge transfer, which differs from tunneling, over thick AlxGa1−xAs barrier in GaAs/AlxGa1−xAs asymmetric double quantum wells is studied by cw photoluminescence excitation (PLE) and time-resolved photoluminescence. It is found that 300-A(ring)-thick Al0.3Ga0.7As barrier is universally "leaky'' with transport time of ∼300 ps, while AlAs and AlAs/GaAs digital alloy barriers with same thickness are not. Aided by a model calculation, we suggest that the intrinsic inhomogeneities in the alloy, which recent x-ray and scanning tunneling microscope studies revealed, may be responsible. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117724
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Reciprocal-space analysis of photoluminescence and photoluminescence excitation spectra (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3230-3232 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that energy positions of features in photoluminescence and photoluminescence excitation (PLE) spectra can be obtained more accurately by Fourier transforming segments of these spectra and analyzing the resulting coefficients in reciprocal space than by using conventional real-space analysis. Fourier transform analysis is particularly advantageous where base line effects are significant, as in PLE. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116446
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    High-mobility p-channel metal-oxide-semiconductor field-effect transistor on strained Si (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2853-2855 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An enhancement-mode p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) is fabricated on a strained Si layer for the first time. A biaxial strain in a thin Si layer is produced by pseudomorphically growing this layer on a Ge0.25Si0.75 buffer layer which is grown on a Si substrate. At higher magnitude of gate bias, channel mobility of a strained Si PMOSFET has been found to be 50% higher than that of an identically processed conventional Si PMOSFET.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109205
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Wet oxidation of GeSi strained layers by rapid thermal processing (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 369-371 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A cold-wall rapid thermal processor is used for the wet oxidation of the commensurately grown GexSi1−x layers on Si substrates. The rate of oxidation of the GexSi1−x layer is found to be significantly higher than that of pure Si, and the oxidation rate increases with the increase in the Ge content in GexSi1−x layer. The oxidation rate of GexSi1−x appears to decrease with increasing oxidation time for the time-temperature cycles considered here. Employing high-frequency and quasi-static capacitance-voltage measurements, it is found that a fixed negative oxide charge density in the range of 1011– 1012/cm2 and the interface trap level density (in the mid-gap region) of about 1012/cm2 eV are present. Further, the density of this fixed interface charge at the SiO2/GeSi interface is found to increase with the Ge concentration in the commensurately grown GeSi layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103694
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...