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  • 1
    Electronic Resource
    Electronic Resource
    Carbon as a barrier for the outdiffusion of Cu (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2545-2547 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effectiveness of carbon as a barrier for the outdiffusion of Cu is studied using C/Cu/substrate and Au/C/Cu/substrate structures. For the C/Cu structure deposited on SiO2 -coated Si with a 700 A(ring) C layer, heating to 700 °C for 72 h and 750 °C for 6 h shows no outdiffusion of Cu to the carbon surface in N2 -H2. Only reaction between Cu and the SiO2 layer underneath is observed. Application of the carbon barrier between Cu and Au in the Au/C/Cu/substrate structure shows that the dilution of the Au layer due to the Cu outdiffusion is similar to but less than that of the Au/Ni/Cu/substrate structure using Ni as a barrier. The stability of the Au/C/Cu/substrate structure is enhanced relative to that of the Au/Ni/Cu/substrate one by more than 150 °C. Both the advantage and concerns using carbon as barriers for the interconnect and contact metallurgies are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101045
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  • 2
    Electronic Resource
    Electronic Resource
    Superconductivity in Bi-Sr-Ca-Cu-O (invited) (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5792-5796 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the structure and superconducting properties of a single phase polycrystalline composition given by Bi2.2Sr1.7Ca1.2Cu2O8+δ as well as measurements on single crystals. X-ray and electron diffraction analyses of both single-crystal and single phase materials show an incommensurately modulated orthorhombic superlattice, derivable from a pseudotetragonal substructure. The various compositions have the common feature that the major portion of the superconductivity disappears above 85 K but there is a small tail in the diamagnetic susceptibility extending to 110 K, above which the sample becomes paramagnetic. Single crystals, grown by the flux method, exhibit the same incommensurately modulated pseudotetragonal structure as the ceramic, but show a higher diamagnetic shielding and in some cases also have tails. The critical currents in the (ab) plane are only about one-fifth of the value found for YBa2Cu3O7 crystals and the anisotropy is smaller. These reduced values may be an intrinsic property of the modulated superlattice but more likely are due to stacking faults and other defects in the crystals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342207
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Processing of La1.8Sr0.2CuO4 and YBa2Cu3O7 superconducting thin films by dual-ion-beam sputtering (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2046-2053 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality La1.8Sr0.2CuO4 and YBa2Cu3O7 superconducting thin films, with zero resistance at 88 K, have been made by dual-ion-beam sputtering of metal and oxide targets at elevated temperatures. The films are about 1.0 μm thick and are single phase after annealing. The substrates investigated are Nd-YAP, MgO, SrF2, Si, CaF2, ZrO2-9% Y2O3, BaF2, Al2O3, and SrTiO3. Characterization of the films was carried out using Rutherford backscattering spectroscopy, resistivity measurements, transmission electron microscopy, x-ray diffraction, and secondary ion mass spectroscopy. Substrate/film interaction was observed in every case. This generally involves diffusion of the substrate into the film, which is accompanied by, for example, the replacement of Ba by Sr in the YBa2Cu2O7 structure, in the case of SrTiO3 substrate. The best substrates were those that did not significantly diffuse into the film and which did not react chemically with the film. In general, the superconducting transition temperature is found to depend on substrate temperature and ion beam energy, film composition, annealing conditions, and the nature and the magnitude of the substrate/film interaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341106
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  • 4
    Electronic Resource
    Electronic Resource
    Magnetron sputtering and laser patterning of high transition temperature Cu oxide films (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1951-1953 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High Tc Y-Ba-Cu-O films have been prepared by dc magnetron sputtering of metal alloy targets. To circumvent the negative ion effect, two alloy targets, YCu and BaCu, are sputtered in an argon atmosphere with an oxygen spray near the substrate. Films deposited on sapphire with onsets at 92 K and a 6° transition width (10–90%) have been achieved using this technique. These films have been successfully patterned with the technique of laser ablation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98986
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  • 5
    Electronic Resource
    Electronic Resource
    YBaCuO superconducting films on SiO2 substrates formed from Cu/BaO/Y2O3/Ag layer structures (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 916-918 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cu/BaO/Y2O3/Ag layer structures were deposited on SiO2 substrates at 600 °C and post-annealed in oxygen at different temperatures. Superconducting oxides with a thickness of 5000 A(ring) were formed at 800 °C, with an onset of 92 K and a zero resistance at 70 K. The films contain mainly the YBa2Cu3O7 phase, with the 103 and 020 diffraction peaks being the major ones observed. The high deposition temperature used is shown to help the formation of the YBa2Cu3O7 phase, leading to the observed superconductivity using SiO2 substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100158
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  • 6
    Electronic Resource
    Electronic Resource
    Thin-film Bi-Sr-Ca-Cu-O high-temperature superconductors using pulsed laser evaporation from sintered disks (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 532-533 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Films of the high-temperature superconductor in the Bi-Sr-Ca-Cu-O system were deposited by pulsed laser evaporation from a ceramic disk. Films deposited onto (100) MgO show x-ray diffraction patterns characteristic of c-axis textured Bi2(Sr,Ca,Bi)3Cu2Ox phase following annealing for 10 min at 850 °C in 20% O2-80% N2. These textured films have zero resistance at 78 K and show resistance drops near 110 K. The effects of the annealing environment on the electrical and structural properties are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100627
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  • 7
    Electronic Resource
    Electronic Resource
    Thick AlxGa1−xAs: An intrinsically percolating barrier owing to its microscopic structural inhomogeneity (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2513-2515 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A significant charge transfer, which differs from tunneling, over thick AlxGa1−xAs barrier in GaAs/AlxGa1−xAs asymmetric double quantum wells is studied by cw photoluminescence excitation (PLE) and time-resolved photoluminescence. It is found that 300-A(ring)-thick Al0.3Ga0.7As barrier is universally "leaky'' with transport time of ∼300 ps, while AlAs and AlAs/GaAs digital alloy barriers with same thickness are not. Aided by a model calculation, we suggest that the intrinsic inhomogeneities in the alloy, which recent x-ray and scanning tunneling microscope studies revealed, may be responsible. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117724
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  • 8
    Electronic Resource
    Electronic Resource
    Photoemission from thin-film lanthanum hexaboride (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1584-1585 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lanthanum hexaboride (LaB6) is investigated for its potential as a low work-function photocathode for high brightness e-beam applications. Thin films of LaB6 at room temperature are shown to have quantum efficiencies of 0.2×10−3 at 442 nm excitation but readily form an inhibiting oxide. This oxide is easily removed by in situ 500 eV Ar+ ion sputtering, which restores photoemission for over 30 min at an oxygen partial pressure of 10−9 Torr.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104131
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