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  • 1
    Electronic Resource
    Electronic Resource
    Observations of acoustic streaming fields around an oscillating ultrasonic file (1992)
    Oxford, UK : Blackwell Publishing Ltd
    Dental traumatology 8 (1992), S. 0 
    Details
    ISSN: 1600-0595
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract The steady acoustic streaming generated around straight and precurved oscillating ultrasonic files driven by the Piezon-Master 400 unit was examined in the free field and in small channels using a stereomicroscope. In addition, the effect of file-wall contact on streaming production was also investigated. The results indicated that the ultrasonic files can generate acoustic streaming both in the free field and in the small channel. Higher velocity streaming was observed when smaller size files were employed and when the file was precurved. Light file-wall contact did not totally inhibit streaming while severe file-wall contact inhibited movement of the file and, as a result, no streaming was observed. The positions and length scales of the streaming vortices appeared to be influenced by the presence of boundaries. In the free field, two rows of vortices were situated along the sides of the file while in the small channel, the vortices were positioned above the surface of the file. These results indicated that it is possible for acoustic streaming to occur in a confined space as in a root canal provided that severe file-wall contact is avoided. It is therefore recommended that light filing or allowing the file to freely vibrate during some stage of treatment should be carried out in order to generate streaming in the root canal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1600-9657.1992.tb00241.x
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  • 2
    Electronic Resource
    Electronic Resource
    Investigation of titanium silicide formation in Ti+Si reactions using infrared spectroscopy and x-ray diffraction (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5156-5159 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared (IR)-absorbance spectroscopy was investigated as a technique for monitoring titanium silicide formation during the reaction of Ti films on (100) Si substrates. Films annealed to various stages of reaction were monitored by x-ray diffraction, film resistivity, and optical reflectance in order to relate the changes in the IR-absorbance spectra to reaction progress. Films at different stages of reaction showed distinctly different extinction coefficients α, and absorbance versus wave-number curves. IR absorbance was determined to be a useful indicator of reaction progress, especially in those cases where samples at different stages of the silicidation reaction have the same resistance but different absorbance behaviors. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359260
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  • 3
    Electronic Resource
    Electronic Resource
    A kinetic study of the C49 to C54 TiSi2 conversion using electrical resistivity measurements on single narrow lines (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7040-7044 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a simple quasi-in situ resistivity technique and its application to the study of C49 to C54 TiSi2 conversion in narrow (0.1-1.0 μm) lines. This technique allowed comparison of both aggregate conversion versus time at temperature behavior and individual-line conversion versus time behavior for silicide lines of different linewidths. As linewidth decreased, the aggregate conversion versus time at temperature behavior slowed, and the conversion behaviors of individual lines having the same linewidth became more variable. Both of these observations are consistent with a nucleation-site-density controlled reaction under conditions of low nucleation site density. Correlations were also found between individual line behaviors and resistance to agglomeration; resistance to agglomeration (for 0.35–1.0 μm lines already in the C54 phase) was highest for lines which had "prompt'' conversion behaviors (as measured by the sheet resistance drop during the first minute of the conversion anneal). Additional data concerning the sensitivity of the initial sheet resistances to formation anneal conditions and linewidth is also briefly discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360407
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  • 4
    Electronic Resource
    Electronic Resource
    Study of C49-TiSi2 and C54-TiSi2 formation on doped polycrystalline silicon using in situ resistance measurements during annealing (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7874-7881 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ resistance versus temperature or time for reactions between 32 and 57.5 nm of titanium and undoped or doped polycrystalline silicon (boron, arsenic, or phosphorus, 7.9×1019–3.0×1020/cm3) has been measured and no clear correlation was found between the activation energy for the formation of the industrially important low-resistance C54-TiSi2 phase and its formation temperature. It is also demonstrated that with certain moderate doping levels typical of complementary metal-oxide-semiconductor manufacturing, boron or phosphorus-doped polycrystalline silicon can delay the formation of C54-TiSi2 more than arsenic-doped polycrystalline silicon. Finally, by using in situ resistance measurements, it is demonstrated that the "two-step'' thermal annealing process similar to a salicide process requires less thermal annealing time at high temperatures to form C54-TiSi2 than a single "one-step'' thermal anneal at the same temperature. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357897
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  • 5
    Electronic Resource
    Electronic Resource
    Processing of La1.8Sr0.2CuO4 and YBa2Cu3O7 superconducting thin films by dual-ion-beam sputtering (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2046-2053 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality La1.8Sr0.2CuO4 and YBa2Cu3O7 superconducting thin films, with zero resistance at 88 K, have been made by dual-ion-beam sputtering of metal and oxide targets at elevated temperatures. The films are about 1.0 μm thick and are single phase after annealing. The substrates investigated are Nd-YAP, MgO, SrF2, Si, CaF2, ZrO2-9% Y2O3, BaF2, Al2O3, and SrTiO3. Characterization of the films was carried out using Rutherford backscattering spectroscopy, resistivity measurements, transmission electron microscopy, x-ray diffraction, and secondary ion mass spectroscopy. Substrate/film interaction was observed in every case. This generally involves diffusion of the substrate into the film, which is accompanied by, for example, the replacement of Ba by Sr in the YBa2Cu2O7 structure, in the case of SrTiO3 substrate. The best substrates were those that did not significantly diffuse into the film and which did not react chemically with the film. In general, the superconducting transition temperature is found to depend on substrate temperature and ion beam energy, film composition, annealing conditions, and the nature and the magnitude of the substrate/film interaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341106
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  • 6
    Electronic Resource
    Electronic Resource
    In situ x-ray diffraction analysis of the C49–C54 titanium silicide phase transformation in narrow lines (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1732-1734 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transformation of titanium silicide from the C49 to the C54 structure was studied using x-ray diffraction of samples containing arrays of narrow lines of preformed C49 TiSi2. Using a synchrotron x-ray source, diffraction patterns were collected at 1.5–2 °C intervals during sample heating at rates of 3 or 20 °C/s to temperatures of 1000–1100 °C. The results show a monotonic increase in the C54 transition temperature by as much as 180 °C with a decreasing linewidth from 1.0 to 0.1 μm. Also observed is a monotonic increase in (040) preferred orientation of the C54 phase with decreasing linewidth. The results demonstrate the power of in situ x-ray diffraction of narrow line arrays as a tool to study finite size effects in thin-film reactions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113349
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  • 7
    Electronic Resource
    Electronic Resource
    Thin-film Bi-Sr-Ca-Cu-O high-temperature superconductors using pulsed laser evaporation from sintered disks (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 532-533 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Films of the high-temperature superconductor in the Bi-Sr-Ca-Cu-O system were deposited by pulsed laser evaporation from a ceramic disk. Films deposited onto (100) MgO show x-ray diffraction patterns characteristic of c-axis textured Bi2(Sr,Ca,Bi)3Cu2Ox phase following annealing for 10 min at 850 °C in 20% O2-80% N2. These textured films have zero resistance at 78 K and show resistance drops near 110 K. The effects of the annealing environment on the electrical and structural properties are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100627
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  • 8
    Electronic Resource
    Electronic Resource
    Low temperature formation of C54–TiSi2 using titanium alloys (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3531-3533 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that the temperature at which the C49 TiSi2 phase transforms to the C54 TiSi2 phase can be lowered more than 100 °C by alloying Ti with small amounts of Mo, Ta, or Nb. Titanium alloy blanket films, containing from 1 to 20 at. % Mo, Ta, or Nb were deposited onto undoped polycrystalline Si substrates. The temperature at which the C49–C54 transformation occurs during annealing at constant ramp rate was determined by in situ sheet resistance and x-ray diffraction measurements. Tantalum and niobium additions reduce the transformation temperature without causing a large increase in resistivity of the resulting C54 TiSi2 phase, while Mo additions lead to a large increase in resistivity. Titanium tantalum alloys were also used to form C54 TiSi2 on isolated regions of arsenic doped Si(100) and polycrystalline Si having linewidths ranging from 0.13 to 0.56 μm. The C54 phase transformation temperature was lowered by over 100 °C for both the blanket and fine line samples. As the concentration of Mo, Ta, or Nb in the Ti alloys increase, or as the linewidth decreases, an additional diffraction peak appears in in situ x-ray diffraction which is consistent with increasing amounts of the higher resistivity C40 silicide phase. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120401
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  • 9
    Electronic Resource
    Electronic Resource
    The growth of crystalline vapor deposited carbon-60 thin films (1993)
    Springer
    Applied physics 56 (1993), S. 185-192 
    Details
    ISSN: 1432-0630
    Keywords: 61.10 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thin films (25-2500 Å) of C60 molecules have been deposited on both (001) NaCl and mica substrates at varying temperatures by resistive evaporation. Both electron diffraction and high resolution microscopy have been used to assess the degree of crystallinity, the orientational ordering and the nature of the defects present in these face-centered-cubic films. For NaCl, optimum conditions yielded polycrystalline films with a tendency towards a 〈110〉 orientation, while for mica, extended single crystal films have been fabricated which exhibit a 〈111〉 direction normal to the film surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00539472
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