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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3125-3131 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an analysis of Bragg–Brentano diffraction spectra from blanket thin (10–20 nm) films of polycrystalline Ir, sputter deposited on thermally oxidized Si wafers. We observed that postdeposition annealing sharpened the Ir diffraction peaks, produced enhanced texture, and resulted in the formation of well-defined thickness fringes that were symmetric around the 111 Ir reflection. Scanning electron microscopy confirmed that the fringes were caused by the increased coherence lengths of the annealed grains. Annealed samples subsequently subjected to reactive ion etching exhibited asymmetric fringe patterns, with lower intensity fringes on the high angle side of the 111 Ir peak. Reannealing these samples restored the symmetric fringes. Analysis of the fringe patterns using simple equations and modeling programs in the public domain yielded valuable structural information about the film and the changes caused by processing. These results were verified by x-ray reflectivity measurements and modeling. We conclude that thickness fringe analysis using standard x-ray systems and simple programs can provide cost-effective process diagnostics for high atomic number thin film structures. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3132-3137 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thickness interference fringes can be seen around the Bragg peaks of a variety of polycrystalline thin (10–20 nm) films using standard x-ray diffraction techniques in a conventional Bragg–Brentano geometry. In this article, thickness fringe analysis is used to investigate oxidation and roughening in thin Ir films with and without overlayers of the ferroelectric PbZrxTi1−xO3 (PZT). Changes in fringe spacing were used to determine the Ir thickness consumed by oxidation. Fringe contrast degradation (indicating roughening) was observed both after oxidation anneals (which formed a surface layer of IrO2) and after subsequent reduction anneals (which converted the IrO2 back to Ir). Film overlayers were found to have a protective effect against oxidation and roughening, as evidenced by comparison of postoxidation fringe patterns for bare and PZT-coated Ir films. Overall, our results demonstrate that thickness fringe analysis can be used as a simple, quantitative probe of processing-induced thin film thickness and morphology changes. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 84 (1986), S. 2668-2674 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have used two-photon laser-induced fluorescence to obtain quantitative measurements of the concentration of ground state O atoms in O2+CF4 rf discharges. Absolute calibration was achieved by generating a known concentration of atomic oxygen by UV laser photolysis of O2. Trace amounts of Ar were added to serve as an inert reference gas for concurrent optical emission measurements, in which the plasma-induced optical emission intensities from O* and Ar* lines were recorded. Emission line shapes were measured using a Fabry–Perot interfermoter to gain information on the mechanisms for formation of excited oxygen atoms in the plasma. Two excitation mechanisms were found to be important: (1) electron impact excitation of ground state atoms, e+O → O*+e, and (2) dissociative excitation of O2, e+O2 → O*+O+e. Evidence for both excitation mechanisms was obtained for O* (8446 A(ring)) emission, with atomic excitation being dominant, whereas dissociative excitation appeared to be the dominant mechanism for O* (7774 A(ring)) emission. Argon actinometry for the determination of ground state oxygen was directly tested. Because of the contribution from dissociative excitation, a strict proportionality, O*/Ar*∝[O]/[Ar], was not satisfied where O* (Ar*) is the intensity of an atomic oxygen (argon) emission line, and [O] ([Ar]) is the oxygen (argon) atom concentration. However, within certain limitations, the O* (8446 A(ring))/Ar* emission intensity ratio gives the right qualitative trends for the O atom concentration.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 85 (1981), S. 3333-3337 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1248-1250 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the growth of n-type modulation-doped Si/SiGe with the doped SiGe supply layer underneath the strained Si channel. The mobility and charge density are measured in samples with 2- and 3-nm-thick spacers using gated Hall measurements. A peak room temperature mobility of 2200 cm2/V s is measured at a sheet density of 2.5×1012 cm−2. The measurements indicate a clear mobility modulation especially near threshold. Our layer design allows the gate to induce a sheet charge density of up to 3.2×1012 cm−2, before any significant reduction in the mobility is observed.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5156-5159 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared (IR)-absorbance spectroscopy was investigated as a technique for monitoring titanium silicide formation during the reaction of Ti films on (100) Si substrates. Films annealed to various stages of reaction were monitored by x-ray diffraction, film resistivity, and optical reflectance in order to relate the changes in the IR-absorbance spectra to reaction progress. Films at different stages of reaction showed distinctly different extinction coefficients α, and absorbance versus wave-number curves. IR absorbance was determined to be a useful indicator of reaction progress, especially in those cases where samples at different stages of the silicidation reaction have the same resistance but different absorbance behaviors. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 83 (1979), S. 947-959 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7040-7044 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a simple quasi-in situ resistivity technique and its application to the study of C49 to C54 TiSi2 conversion in narrow (0.1-1.0 μm) lines. This technique allowed comparison of both aggregate conversion versus time at temperature behavior and individual-line conversion versus time behavior for silicide lines of different linewidths. As linewidth decreased, the aggregate conversion versus time at temperature behavior slowed, and the conversion behaviors of individual lines having the same linewidth became more variable. Both of these observations are consistent with a nucleation-site-density controlled reaction under conditions of low nucleation site density. Correlations were also found between individual line behaviors and resistance to agglomeration; resistance to agglomeration (for 0.35–1.0 μm lines already in the C54 phase) was highest for lines which had "prompt'' conversion behaviors (as measured by the sheet resistance drop during the first minute of the conversion anneal). Additional data concerning the sensitivity of the initial sheet resistances to formation anneal conditions and linewidth is also briefly discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ resistance versus temperature or time for reactions between 32 and 57.5 nm of titanium and undoped or doped polycrystalline silicon (boron, arsenic, or phosphorus, 7.9×1019–3.0×1020/cm3) has been measured and no clear correlation was found between the activation energy for the formation of the industrially important low-resistance C54-TiSi2 phase and its formation temperature. It is also demonstrated that with certain moderate doping levels typical of complementary metal-oxide-semiconductor manufacturing, boron or phosphorus-doped polycrystalline silicon can delay the formation of C54-TiSi2 more than arsenic-doped polycrystalline silicon. Finally, by using in situ resistance measurements, it is demonstrated that the "two-step'' thermal annealing process similar to a salicide process requires less thermal annealing time at high temperatures to form C54-TiSi2 than a single "one-step'' thermal anneal at the same temperature. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1447-1452 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that the thermal diffusivity of thin-film samples bonded to transparent substrates can be measured from the phase lag of thermal waves propagating from the sample surface into the substrate. The thermal waves are detected from the substrate's interferometrically modulated reflectance. This technique is used to determine the thermal diffusivity of 5-μm-thick polymer films.
    Type of Medium: Electronic Resource
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