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  • 1
    ISSN: 0378-4320
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1248-1250 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the growth of n-type modulation-doped Si/SiGe with the doped SiGe supply layer underneath the strained Si channel. The mobility and charge density are measured in samples with 2- and 3-nm-thick spacers using gated Hall measurements. A peak room temperature mobility of 2200 cm2/V s is measured at a sheet density of 2.5×1012 cm−2. The measurements indicate a clear mobility modulation especially near threshold. Our layer design allows the gate to induce a sheet charge density of up to 3.2×1012 cm−2, before any significant reduction in the mobility is observed.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3115-3120 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Buried boron layers were epitaxially grown on single crystal silicon substrates and subjected to steam oxidation at 650–750 °C and pressures of 1, 5, and 15 atm. The layers were approximately 200 nm thick and capped by 400 nm of undoped silicon. The boron concentration varied from 8×1017 to 4×1018 atoms/cm3. The ensuing enhanced boron diffusion was modeled on the assumption that the oxidation maintained a supersaturation of interstitials at the surface which was proportional to the square root of the oxidation rate. Fully coupled dopant-defect diffusion equations were necessary to accurately model the oxidation enhanced diffusion. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1111-1116 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: PtSi contacts to As-doped polycrystalline silicon have been studied with respect to dopant redistribution, microstructure, and contact resistance. Arsenic was found to pileup at the PtSi-polysilicon interface upon silicide formation. Cross-sectional transmission-electron microscopy revealed columnar PtSi grains and a relatively flat interface between PtSi and polysilicon. These observations are similar to those reported for the case of PtSi formed on the single-crystal silicon. The specific contact resistance (ρc) has been investigated as a function of As concentration ranging from 8×1019 to 2×1021 cm−3 and of its dependence on substrate preclean procedures prior to Pt deposition. It was found that ρc decreases with increasing As concentration, as expected from theory. However, the contact resistance to As-doped polysilicon is about ten times higher than contacts to similarly doped single-crystal Si. The origin of this difference is attributed to the fact that not all of the implanted As was activated. Hall-voltage measurements showed that only about 10% of the implanted As was electrically active after an 880 °C, 20 min furnace annealing. Rapid-thermal annealing was then used to activate a higher fraction of the implanted As. Consequently, a much lower ρc was obtained: e.g., 7.5×10−8 Ω cm2 for samples annealed at 1050 °C for 30 s, in contrast to a value of 8.4×10−7 Ω cm2 for a furnace-annealed sample.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 487-489 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of the implantation of silicon ions on the anomalous transient diffusion of ion-implanted boron is investigated. It is found that silicon ion fluences well below that necessary to amorphize the lattice substantially reduce the anomalous transient diffusion of subsequently implanted boron. The sheet resistance, however, is increased by the additional silicon implant. The implantation of silicon ions into activated boron layers causes additional anomalous diffusion at substantial distances beyond the range of the silicon ions. The anomalous motion is also reduced in regions where the damage is greater. The effects can be explained in terms of the generation of point defect clusters which dissolve during anneal and the sinking of point defects in the regions of high damage by the formation of interstitial type extended defects.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Nuclear Inst. and Methods in Physics Research, B 21 (1987), S. 612-617 
    ISSN: 0168-583X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 0029-554X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Energy, Environment Protection, Nuclear Power Engineering , Physics
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Nuclear Instruments 3 (1958), S. 213-217 
    ISSN: 0369-643X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Energy, Environment Protection, Nuclear Power Engineering , Physics
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Journal of neural transmission 43 (1978), S. 217-226 
    ISSN: 1435-1463
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary It has been shown that 5 or 10 mg (-)deprenyl after i.v. application inhibited platelet MAO within 30 min. This effect correlated with the improvement of parkinsonian patients disability. Platelet MAO is purely of type B, thus resembling the human brain enzyme, which is 80% of type B. In other organs of the human MAO-A is of higher activity, thus it can oxidatively deaminate 5-HT, noradrenaline and tyramine in the periphery. The rather low peripheral side effects of (-)deprenyl can be explained by this fact. In vitro studies demonstrated that (-)deprenyl in comparison to d, l-tranylcypromine, clorgyline and harmaline is by far the most potent inhibitor of human brain MAO. Post-mortem studies in different human brain areas showed that there are differences in the behaviour of (-)deprenyl (10 mg) between short- and long-term treatment. Both show sufficient inhibition of DA-sensitive MAO (85–90%). However, when 5-HT is used as a substrate short-term treatment inhibits by about 40–50% whereas long-term treatment inhibits by about 65% which is higher than that mentioned before but not sufficient to increase brain 5-HT or decrease 5-HIAA. Therefore, long-term treatment with more than 1 mg/10 kg body weight could result in an accumulation of (-)deprenyl in the brain. Evidence for this derives from one parkinsonian patient, who was treated with 100 mg (-)deprenyl in which case both forms of the enzyme were inhibited sufficiently to increase DA and 5-HT in several brain regions.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Journal of neural transmission 100 (1995), S. 153-163 
    ISSN: 1435-1463
    Keywords: Intracellular calcium ; Parkinson's disease ; dopaminergic neurons ; neurotoxins
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary 1-Methyl-4-phenylpyridinium (MPP+), the active metabolite of 1-methyl-4-phenyl-1,2,3,6-tetrahydropyridine (MPTP) serves as a valuable tool in animal models of Parkinson's disease. Primary cell cultures of mesencephalon from C57/B16 mice were used to investigate the effects of various dopaminergic neurotoxins on the intracellular calcium metabolism. MPP+ was compared to its precursor MPTP and a structural analogue paraquat (methylviologen). Direct addition of these neurotoxins (10 μM) to fura-2-labeled cells did not change intracellular calcium concentrations in the presence of 1 mM extracellular calcium. When mesencephalic neurons were exposed to the compounds for 24 hours, only MPP+ led to an increase in calcium concentration in the absence and presence of extracellular calcium (36%, p〈0.05 and 47%, p〈0.01 versus control group). Intracellular calcium concentrations in cortical cultures devoid of dopaminergic cells were not changed by the above neurotoxins. Thus MPP+ is shown to selectively increase intracellular calcium concentrations in mesencephalic cultures.
    Type of Medium: Electronic Resource
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