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  • Electronic Resource  (27)
  • 1
    Electronic Resource
    Electronic Resource
    A kinetic study of the C49 to C54 TiSi2 conversion using electrical resistivity measurements on single narrow lines (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7040-7044 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a simple quasi-in situ resistivity technique and its application to the study of C49 to C54 TiSi2 conversion in narrow (0.1-1.0 μm) lines. This technique allowed comparison of both aggregate conversion versus time at temperature behavior and individual-line conversion versus time behavior for silicide lines of different linewidths. As linewidth decreased, the aggregate conversion versus time at temperature behavior slowed, and the conversion behaviors of individual lines having the same linewidth became more variable. Both of these observations are consistent with a nucleation-site-density controlled reaction under conditions of low nucleation site density. Correlations were also found between individual line behaviors and resistance to agglomeration; resistance to agglomeration (for 0.35–1.0 μm lines already in the C54 phase) was highest for lines which had "prompt'' conversion behaviors (as measured by the sheet resistance drop during the first minute of the conversion anneal). Additional data concerning the sensitivity of the initial sheet resistances to formation anneal conditions and linewidth is also briefly discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360407
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  • 2
    Electronic Resource
    Electronic Resource
    Study of C49-TiSi2 and C54-TiSi2 formation on doped polycrystalline silicon using in situ resistance measurements during annealing (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7874-7881 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ resistance versus temperature or time for reactions between 32 and 57.5 nm of titanium and undoped or doped polycrystalline silicon (boron, arsenic, or phosphorus, 7.9×1019–3.0×1020/cm3) has been measured and no clear correlation was found between the activation energy for the formation of the industrially important low-resistance C54-TiSi2 phase and its formation temperature. It is also demonstrated that with certain moderate doping levels typical of complementary metal-oxide-semiconductor manufacturing, boron or phosphorus-doped polycrystalline silicon can delay the formation of C54-TiSi2 more than arsenic-doped polycrystalline silicon. Finally, by using in situ resistance measurements, it is demonstrated that the "two-step'' thermal annealing process similar to a salicide process requires less thermal annealing time at high temperatures to form C54-TiSi2 than a single "one-step'' thermal anneal at the same temperature. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357897
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  • 3
    Electronic Resource
    Electronic Resource
    Investigation of titanium silicide formation in Ti+Si reactions using infrared spectroscopy and x-ray diffraction (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5156-5159 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared (IR)-absorbance spectroscopy was investigated as a technique for monitoring titanium silicide formation during the reaction of Ti films on (100) Si substrates. Films annealed to various stages of reaction were monitored by x-ray diffraction, film resistivity, and optical reflectance in order to relate the changes in the IR-absorbance spectra to reaction progress. Films at different stages of reaction showed distinctly different extinction coefficients α, and absorbance versus wave-number curves. IR absorbance was determined to be a useful indicator of reaction progress, especially in those cases where samples at different stages of the silicidation reaction have the same resistance but different absorbance behaviors. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359260
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  • 4
    Electronic Resource
    Electronic Resource
    Determination of Ir consumption during thermal oxidation and PbZrxTi1−xO3 processing using Bragg-peak fringe analysis (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3132-3137 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thickness interference fringes can be seen around the Bragg peaks of a variety of polycrystalline thin (10–20 nm) films using standard x-ray diffraction techniques in a conventional Bragg–Brentano geometry. In this article, thickness fringe analysis is used to investigate oxidation and roughening in thin Ir films with and without overlayers of the ferroelectric PbZrxTi1−xO3 (PZT). Changes in fringe spacing were used to determine the Ir thickness consumed by oxidation. Fringe contrast degradation (indicating roughening) was observed both after oxidation anneals (which formed a surface layer of IrO2) and after subsequent reduction anneals (which converted the IrO2 back to Ir). Film overlayers were found to have a protective effect against oxidation and roughening, as evidenced by comparison of postoxidation fringe patterns for bare and PZT-coated Ir films. Overall, our results demonstrate that thickness fringe analysis can be used as a simple, quantitative probe of processing-induced thin film thickness and morphology changes. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1346661
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  • 5
    Electronic Resource
    Electronic Resource
    Wavelength-modulated interferometric thermometry for improved substrate temperature measurement (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 3862-3868 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Interferometric thermometry is a promising noncontact technique for measuring the temperature of transparent substrates (with polished front and back surfaces) from thermally induced changes in sample thickness and refractive index. However, for substrates of uniform thickness, the technique is not sensitive to the direction of temperature change, thus restricting its use to situations in which the temperature variation is monotonic. In this paper, we present some new schemes for interferometric thermometry based on the wavelength modulation capabilities of the distributed feedback laser diode. These schemes allow both the magnitude and direction of temperature change to be determined. One scheme utilized to measure temperature changes in a silicon wafer during thermal cycling is described in detail. In addition, the calibration factors required to convert the thermally induced reflectance oscillations ("fringes'') of known-thickness samples into temperature change are provided for Si and GaAs at wavelengths near 1.5 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143284
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  • 6
    Electronic Resource
    Electronic Resource
    Time-resolved optical emission during laser ablation of Cu, CuO, and high-Tc superconductors: Bi1.7Sr1.3Ca2Cu3Ox and Y1Ba1.7Cu2.7Oy (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4435-4440 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-resolved measurements of optical emission from the ablation plume of ArF excimer-laser-irradiated Cu, CuO, Bi1.7Sr1.3Ca2Cu3Ox, and Y1Ba1.7Cu2.7Oy are reported. Data were collected on several emission lines for a variety of neutral and ionic species, including Cu+, Cu, Sr+, Sr, Ca+, Ca, and Y. The time dependence of the emission intensity is analyzed to obtain effective particle velocities. The results indicate most probable velocities of (3–10)×105 cm/s for the neutral species and (1–2)×106 cm/s for the ions, in qualitative agreement with previous work. However, the time dependence of the optical emission intensity can be influenced by radiation trapping and the detailed mechanisms of species excitation. These effects are shown to complicate the quantitative relationship between the emission intensity versus time and the particle velocity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343939
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  • 7
    Electronic Resource
    Electronic Resource
    An interferometric calorimeter for thin-film thermal diffusivity measurements (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1447-1452 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that the thermal diffusivity of thin-film samples bonded to transparent substrates can be measured from the phase lag of thermal waves propagating from the sample surface into the substrate. The thermal waves are detected from the substrate's interferometrically modulated reflectance. This technique is used to determine the thermal diffusivity of 5-μm-thick polymer films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342957
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  • 8
    Electronic Resource
    Electronic Resource
    Determination of processing damage in thin polycrystalline Ir films using Bragg-peak fringe analysis (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3125-3131 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an analysis of Bragg–Brentano diffraction spectra from blanket thin (10–20 nm) films of polycrystalline Ir, sputter deposited on thermally oxidized Si wafers. We observed that postdeposition annealing sharpened the Ir diffraction peaks, produced enhanced texture, and resulted in the formation of well-defined thickness fringes that were symmetric around the 111 Ir reflection. Scanning electron microscopy confirmed that the fringes were caused by the increased coherence lengths of the annealed grains. Annealed samples subsequently subjected to reactive ion etching exhibited asymmetric fringe patterns, with lower intensity fringes on the high angle side of the 111 Ir peak. Reannealing these samples restored the symmetric fringes. Analysis of the fringe patterns using simple equations and modeling programs in the public domain yielded valuable structural information about the film and the changes caused by processing. These results were verified by x-ray reflectivity measurements and modeling. We conclude that thickness fringe analysis using standard x-ray systems and simple programs can provide cost-effective process diagnostics for high atomic number thin film structures. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1346660
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  • 9
    Electronic Resource
    Electronic Resource
    Thermal stability and oxygen-loss characteristics of Pt(O) films prepared by reactive sputtering (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6084-6087 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pt(O) films having compositions ranging from pure Pt to amorphous platinum oxide a-PtOx (x∼1.4) were prepared by reactive sputtering and examined during and after heating to temperatures used for deposition and processing of high-epsilon (HE) and ferroelectric (FE) materials (400–650 °C). A two stage decomposition process was observed for a-PtOx (x∼1.4) films heated in N2, with the first stage of decomposition beginning at temperatures well below 400 °C. In an O2 ambient, decomposition was accompanied by formation of a crystalline Pt3O4 phase prior to complete decomposition to metallic Pt. However, the relatively slow rate of oxygen loss from a-PtOx suggests that significant amounts of oxygen should remain in Pt(O) electrodes after HE/FE layer deposition. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371718
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  • 10
    Electronic Resource
    Electronic Resource
    On the origin of spatial nonuniformities in the composition of pulsed-laser-deposited films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5629-5635 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model is proposed for the origin of spatial nonuniformities in the composition of pulsed laser-deposited films derived from multicomponent targets. It is based on the idea that the forward peaking of each species in the plume depends on the species mass via the ratio of two mass-dependent velocities: the flow velocity, which characterizes the directed forward motion, and the mean random thermal velocity, which characterizes lateral motion. The on-axis enrichment of light-mass species observed in films deposited at moderate laser fluences (e.g., Cu in depositions of YBa2Cu3O7) is attributed to the dual effects of a mass-dependent collision rate and collision effectiveness. In weak expansions, these effects leave the lower mass species with a lower temperature, a higher flow velocity, and a relatively more forward-peaked distribution than their high-mass counterparts. The improved compositional uniformity observed for depositions at higher laser fluences is attributed to an incomplete transition to a stronger expansion regime in which all the species in the plume have the same flow velocity. In this regime, the high-mass species are relatively more forward peaked due to their lower mean thermal velocity which scales as (mass)−1/2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350178
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