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  • 1
    Electronic Resource
    Electronic Resource
    Erratum: "Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes" [Appl. Phys. Lett. 80, 3817 (2002)] (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 1359-1359 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1502905
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  • 2
    Electronic Resource
    Electronic Resource
    A kinetic study of the C49 to C54 TiSi2 conversion using electrical resistivity measurements on single narrow lines (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7040-7044 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a simple quasi-in situ resistivity technique and its application to the study of C49 to C54 TiSi2 conversion in narrow (0.1-1.0 μm) lines. This technique allowed comparison of both aggregate conversion versus time at temperature behavior and individual-line conversion versus time behavior for silicide lines of different linewidths. As linewidth decreased, the aggregate conversion versus time at temperature behavior slowed, and the conversion behaviors of individual lines having the same linewidth became more variable. Both of these observations are consistent with a nucleation-site-density controlled reaction under conditions of low nucleation site density. Correlations were also found between individual line behaviors and resistance to agglomeration; resistance to agglomeration (for 0.35–1.0 μm lines already in the C54 phase) was highest for lines which had "prompt'' conversion behaviors (as measured by the sheet resistance drop during the first minute of the conversion anneal). Additional data concerning the sensitivity of the initial sheet resistances to formation anneal conditions and linewidth is also briefly discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360407
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  • 3
    Electronic Resource
    Electronic Resource
    High-resolution scanning SQUID microscope (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1138-1140 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have combined a novel low temperature positioning mechanism with a single-chip miniature superconducting quantum interference device (SQUID) magnetometer to form an extremely sensitive new magnetic microscope, with a demonstrated spatial resolution of ∼10 μm. The design and operation of this scanning SQUID microscope will be described. The absolute calibration of this instrument with an ideal point source, a single vortex trapped in a superconducting film, will be presented, and a representative application will be discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113838
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  • 4
    Electronic Resource
    Electronic Resource
    New model catalysts: uniform platinum cluster arrays produced by electron beam lithography (1996)
    Springer
    Catalysis letters 37 (1996), S. 131-136 
    Details
    ISSN: 1572-879X
    Keywords: electron beam lithography ; ethylene hydrogenation ; model catalyst ; platinum cluster arrays
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Platinum particles of 50 nm diameter and 15 run height at 200 nm spacing have been prepared on an oxidized silicon wafer using electron beam lithography. These particles were cleaned of surface carbon with low energy (400 eV) neon ion sputtering. The rate of ethylene hydrogenation over this new model catalyst was measured in a UHV chamber equipped with a high pressure cell for catalytic reaction. Measured turnover numbers are on good agreement with previous work. Atomic force microscopy (AFM) and temperature programmed desorption (TPD) indicate the sample structure remains unaltered by the cleaning and the catalytic reaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00807743
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  • 5
    Electronic Resource
    Electronic Resource
    Conductance oscillations and transport spectroscopy of a quantum dot (1991)
    Springer
    The European physical journal 85 (1991), S. 357-366 
    Details
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Results are reported for low temperature measurements of the conductance through small regions of a two-dimensional electron gas (2 DEG). An unconventional GaAs heterostructure is used to form a 2 DEG whose density can be tuned by the gate voltage applied to its conductive substrate. Electron beam lithography is used to pattern a narrow channel in the 2 DEG interrupted by two constrictions, defining a small 2 DEG island between them. The conductance is found to oscillate periodically with the gate voltage, namely with electron density. Calculations of the capacitance between the substrate and the island show that the period of oscillation corresponds to adding one electron to the island. The oscillatory behavior results primarily from the discreteness of charge and the Coulomb interaction between electrons. However, the observed temperature dependence of these oscillations requires a more sophisticated treatment which includes the quantized electron energy levels as well. The magnetic field dependence of the oscillations allows us to extract the discrete energy spectrum of the quantum dot in the quantum-Hall regime.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01307631
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