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  • 1
    Electronic Resource
    Electronic Resource
    Scanning tunneling microscope for low temperature, high magnetic field, and spatially resolved spectroscopy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 58 (1987), S. 1806-1810 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A scanning tunneling microscope capable of operating at low temperatures, T=400 mK, and in high magnetic fields, B=8 T, is described. Accompanying electronics, under the control of an IBM PC/AT, provide routine spatially resolved spectroscopy, allowing characterization of properties such as superconducting energy gaps and local density of states on the surface. Data are presented to illustrate the usefulness of spatially resolved spectroscopy at low temperatures and in high magnetic fields.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139524
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  • 2
    Electronic Resource
    Electronic Resource
    A limit on spin–charge separation in high- T c superconductors from the absence of a vortex-memory effect (2001)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 414 (2001), S. 887-889 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] There is a long-standing debate about whether spin–charge separation is the root cause of the peculiar normal-state properties and high superconducting transition temperatures of the high-Tc materials. In the proposed state of matter, the elementary excitations are not ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/414887a
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  • 3
    Electronic Resource
    Electronic Resource
    Pure d x 2 – y 2 order-parameter symmetry in the tetragonal superconductor TI 2 Ba 2 CuO 6+δ (1997)
    [s.l.] : Nature Publishing Group
    Nature 387 (1997), S. 481-483 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] An s + d pair state in orthorhombic copper oxides such as YBa2Cu3O7_5 (YBCO) is characterized by a gap function A(k) that transforms like s(tfx + fy + d(tfx - *£), where hx and ky are components of the wavevector k, and s and d are measures of the amounts of s-wave and d-wave pairing in the ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/387481a0
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  • 4
    Electronic Resource
    Electronic Resource
    Electroluminescence emission from indium oxide and indium-tin-oxide (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3556-3558 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electroluminescence emission from indium-tin-oxide (ITO) and indium oxide films incorporated in a Si-rich SiO2-SiO2-ITO (In2O3) multiple-layer structure is reported. The light emitted has a peak at approximately 3.3 eV for ITO and at 2.6 eV for In2O3. The intensity of the light is found to depend on the applied electric field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335730
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  • 5
    Electronic Resource
    Electronic Resource
    Electron heating in silicon dioxide and off-stoichiometric silicon dioxide films (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1214-1238 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron heating in silicon dioxide (SiO2) at electric fields (approximately-less-than)5 MV/cm is demonstrated using three different experimental techniques: carrier separation, electroluminescence, and vacuum emission. Gradual heating of the electronic carrier distribution is demonstrated for fields from 5 to 12 MV/cm with the average excess energy of the distribution reaching (approximately-greater-than)4 eV with respect to the bottom of the SiO2 conduction band edge. Off-stoichiometric SiO2 (OS-SiO2) layers are shown to behave similarly to very thin SiO2((approximately-less-than)70 A(ring) in thickness) with a transition occurring from "cool'' to "hot'' electrons as the conduction mechanism changes from direct tunneling between silicon (Si) islands in the SiO2 matrix of the OS-SiO2 material to Fowler-Nordheim emission into the conduction band of the SiO2 regions. The relationship of electron heating to electron trapping, positive charge generation, interface state creation, and dielectric breakdown is treated. The importance of various scattering mechanisms for stabilizing the electronic field-induced heating in the SiO2 and preventing current runaway and impact ionization is discussed. Scattering may be due to disorder, trapped charges, and acoustical phonons, as well as longitudinal optical phonons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334518
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  • 6
    Electronic Resource
    Electronic Resource
    Noise spectroscopy of deep level (DX) centers in GaAs-AlxGa1−xAs heterostructures (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1541-1548 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the generation-recombination noise from the donor-related DX centers in current biased GaAs/AlxGa1−xAs heterostructures from 1 Hz to 25 kHz and from 77 to 330 K. A significant noise contribution from these traps is observed even at Al mole fractions below 0.2, where the trap level is resonant with the conduction band. The activated behavior of the noise spectrum from this resonant level is very similar to that observed at higher Al mole fractions, when the level lies deep in the fundamental gap. This result can be predicted, based on the recently elucidated relationship of the trap level to the band structure of AlxGa1−xAs. In accordance with other experimental results, the noise spectra demonstrate that the emission and capture kinetics of the level are unperturbed by its resonance with the conduction band. We briefly discuss some implications of these results for heterostructure transistor design.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339938
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  • 7
    Electronic Resource
    Electronic Resource
    Variable sample temperature scanning superconducting quantum interference device microscope (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 4011-4013 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate a design for a scanning superconducting quantum interference device (SQUID) microscope in which the sample temperature can be varied over a large range. In this design, both sample and SQUID are in the same vacuum space, separated by a few microns. By firmly anchoring the SQUID to a low-temperature bath, the sample temperature can be changed while the SQUID remains superconducting. This allows magnetic imaging at varying sample temperatures with micron-scale spatial resolution and the sensitivity of a low-Tc SQUID. We demonstrate this approach by imaging the temperature dependence of Abrikosov vortices in thin films of the high-temperature superconductor YBa2Cu3O7−δ. We extract the in-plane penetration depth λab(T) in our samples from these measurements. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123244
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  • 8
    Electronic Resource
    Electronic Resource
    Scanning magnetoresistance microscopy of La0.67Sr0.33MnO3 films : The 7th joint MMM-intermag conference on magnetism and magnetic materials (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 7061-7063 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a magnetic imaging scheme using the magnetoresistive spin valve head in a dc bias mode as a sensing element. By scanning the head in contact with the sample we obtain a submicron spatial resolution map of the normal component of the magnetic field in the temperature range 4.2–300 K. The writing element of the sensor can be used to alter the local magnetic structure in a controlled way. This technique was applied to image the magnetic domain structure down to 77 K in patterned thin films of La0.67Sr0.33MnO3, known for their colossal magnetoresistance. A reorientation of single or multiple domains in the films was accomplished by applying a local magnetic field with the writing element, while the effect on magnetotransport was monitored with the simultaneous measurement of current–voltage characteristics. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367640
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  • 9
    Electronic Resource
    Electronic Resource
    High-resolution scanning SQUID microscope (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1138-1140 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have combined a novel low temperature positioning mechanism with a single-chip miniature superconducting quantum interference device (SQUID) magnetometer to form an extremely sensitive new magnetic microscope, with a demonstrated spatial resolution of ∼10 μm. The design and operation of this scanning SQUID microscope will be described. The absolute calibration of this instrument with an ideal point source, a single vortex trapped in a superconducting film, will be presented, and a representative application will be discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113838
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  • 10
    Electronic Resource
    Electronic Resource
    Magnetic imaging of moat-guarded superconducting electronic circuits (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1769-1771 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting electronic circuits surrounded by various configurations of holes in the superconducting ground plane have been imaged using a high resolution scanning superconducting quantum interference device (SQUID) microscope. These data demonstrate that in the weak field limit continuous moats trap flux more effectively to protect the circuits than small holes in the same configuration. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114377
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