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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 6440-6448 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A simple approximation method is described for the propagation of a classical Gaussian distribution function. This method is the classical analog of Heller's well-known scheme for the propagation of Gaussian wave packets [E. J. Heller, J. Chem. Phys. 62, 1544 (1975)]. The classical version has the merit that thermal spreading of the distribution function can be accounted for. A simple method is proposed for treating the combined effects of quantum-mechanical and thermal spreading. In particular, it is shown that the classical approach can be used for an arbitrary initial temperature; it is only necessary to correctly specify the initial width of the distribution in configuration space and the initial root-mean-square momentum spread. Also, an improved method is presented which conserves the total energy of the system. The local-Gaussian method is useful when the force field is approximately linear over the width of the distribution function. In general, this criterion is more readily satisfied at low temperatures, where thermal spreading is not too severe, but where quantum effects can become important. The local-Gaussian method is applied to the dissociation of diatomic molecules by a sudden electronic transition, where a well-defined initial distribution function is propagated on a repulsive potential-energy curve. A comparison with "exact'' classical and quantum-mechanical calculations is made.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 3389-3406 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We present a simple classical model for understanding time-resolved absorption spectra of molecules that are in the process of dissociating. The model applies to absorption spectra that are obtained by measuring the spectral power density of an ultrafast, continuum probe pulse after transmission through the sample. We show that the classical model can yield results in good agreement with quantum-mechanical wave packet propagation calculations. In a close analogy with collisional line broadening, the time-resolved absorption spectra are shown to have an impact region near the separated-atom transition frequency and a far-wing region. The impact region is due to radiation emitted after the molecule has separated into atomic fragments, and the far-wing region is due to radiation emitted during the time of strong molecular interaction. The spectrum in the impact region depends upon an effective phase shift for a "partial'' collision, which begins at the time that the probe pulse sweeps through the molecular transition frequency. For narrow wave packets, this phase shift can be directly measured, and the molecular transition frequency can be recovered as a function of time along the path of dissociation. For very broad wave packets, the time-resolved absorption spectra approach a statistical limit, in which the absorption line shape becomes an image in frequency space of the probability density in configuration space at the time of excitation by the probe pulse. In all cases, the frequency-integrated absorption is proportional to the net population of molecules that are excited by the probe pulse. In principle, this result can be used to obtain the strength of the transition dipole moment as a function of internuclear separation. We also consider fluorescence induced by a short optical probe pulse, as in the experiments of Zewail and co-workers. Fluorescence measurements are shown to be fundamentally different from measurements of the transmitted spectral power density: fluorescence depends upon the net population excited by the probe pulse, whereas the transmitted spectral power density depends upon interference between the incident probe field and the polarization field. Thus these two experimental techniques are sensitive to different aspects of the dissociation process.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 1654-1663 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Time-resolved absorption spectra are recorded for Ga atoms produced by the photolytic action of 300 fs, 248.5 nm laser pulses on gas-phase GaCl molecules. Photodissociation of GaCl at 248.5 nm produces both ground-state (2P1/2) and spin–orbit-excited (2P3/2) Ga atoms, resulting in strong transient-absorption features at 403.3 and 417.2 nm, respectively. The experimental spectra are analyzed to obtain the kinetic energy of the photofragments, which is estimated to be (approximately-equal-to)0.08 eV for both channels. The analysis suggests that the dissociation limits are (1) Ga 2P1/2+Cl* 2P1/2 for the 403.3 nm channel; and (2) Ga* 2P3/2+Cl 2P3/2 for the 417.2 nm channel. From these results, a new estimate for the dissociation energy of GaCl is obtained: D00=4.80±0.03 eV.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 888-890 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report in situ measurements of SiO(g) evolution during the oxidation of silicon by O2 for a range of experimental conditions including the transition from active to passive oxidation. The results show that this transition occurs when the SiO(g) partial pressure reaches the equilibrium vapor pressure for the reaction Si(s)+SiO(s)(arrow-right-and-left)2SiO(g). During the growth of a SiO2 film, there is no significant transport of SiO molecules into the gas phase.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2424-2426 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have annealed Si-SiO2 structures at an elevated temperature in He(g) with SiO(g) added to the ambient. A SiO2 decomposition reaction that normally forms large voids in a thin SiO2 film during annealing in He(g) is not detected with the added SiO(g). Instead, chemically reactive SiC impurity sites which initiate the SiO2 decomposition reaction are found segregated along crystallographic planes in the substrate at the Si-SiO2 interface. The mechanism and technological importance of this interfacial reaction are discussed.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Physical Chemistry 40 (1989), S. 173-206 
    ISSN: 0066-426X
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 84 (1986), S. 2668-2674 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We have used two-photon laser-induced fluorescence to obtain quantitative measurements of the concentration of ground state O atoms in O2+CF4 rf discharges. Absolute calibration was achieved by generating a known concentration of atomic oxygen by UV laser photolysis of O2. Trace amounts of Ar were added to serve as an inert reference gas for concurrent optical emission measurements, in which the plasma-induced optical emission intensities from O* and Ar* lines were recorded. Emission line shapes were measured using a Fabry–Perot interfermoter to gain information on the mechanisms for formation of excited oxygen atoms in the plasma. Two excitation mechanisms were found to be important: (1) electron impact excitation of ground state atoms, e+O → O*+e, and (2) dissociative excitation of O2, e+O2 → O*+O+e. Evidence for both excitation mechanisms was obtained for O* (8446 A(ring)) emission, with atomic excitation being dominant, whereas dissociative excitation appeared to be the dominant mechanism for O* (7774 A(ring)) emission. Argon actinometry for the determination of ground state oxygen was directly tested. Because of the contribution from dissociative excitation, a strict proportionality, O*/Ar*∝[O]/[Ar], was not satisfied where O* (Ar*) is the intensity of an atomic oxygen (argon) emission line, and [O] ([Ar]) is the oxygen (argon) atom concentration. However, within certain limitations, the O* (8446 A(ring))/Ar* emission intensity ratio gives the right qualitative trends for the O atom concentration.
    Type of Medium: Electronic Resource
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