ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have demonstrated a novel planar, avalanche photodiode (APD) for use in long-wavelength (0.95–1.65 μm) optical communication systems. The device is a separate absorption and multiplication region APD utilizing p+ guard rings which are concentric with, but not attached to the central diffused p+-n junction region. Since no contact is made to the rings, their potential is allowed to "float'' at a value somewhat less than that established by the externally applied voltage. The APD, which is fabricated in a manner identical to simple p-i-n photodiodes, eliminates edge breakdown effects while greatly reducing the electric field at the insulator/semiconductor interface. A 60-μm-diam junction device grown by vapor phase epitaxy is observed to have a primary dark current of 〈300 pA, and a capacitance of 290 fF at 90% of the breakdown voltage. Uniform gains as high as 11 have been observed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.100006
Permalink
