Bibliothek

X
feed icon rss

Ihre E-Mail wurde erfolgreich gesendet. Bitte prüfen Sie Ihren Maileingang.

Leider ist ein Fehler beim E-Mail-Versand aufgetreten. Bitte versuchen Sie es erneut.

Vorgang fortführen?

Exportieren
Filter
Datenquelle
Materialart
Erscheinungszeitraum
  • 1
    Digitale Medien
    Digitale Medien
    Determination of the composition of strained InGaAsP layers on InP substrates using photoreflectance and double-crystal x-ray diffractometry (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2152-2155 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Determining the composition of strained InGaAsP films through measurements of the lattice spacings and band-gap energies (Eg) requires converting the measured values to ones which would correspond to unstrained material. In strained layers the lattice constants perpendicular and parallel to the growth plane can vary significantly from the relaxed value, and the optically measured Eg is affected by a strain-induced splitting of the valence band and a shifting of the direct gap energy. By combining double-crystal x-ray data with room-temperature photoreflectance results, we determine the InGaAsP composition accurately using an iterative procedure. Film compositions calculated using strain adjusted values of Eg agree with those determined by energy dispersive spectroscopy to within 1–2 at. %, whereas if energy shifts are not considered, the error approaches 10 at. % for strain on the order of 0.4%.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.349452
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 2
    Digitale Medien
    Digitale Medien
    Intense second harmonic generation and long-range structural ordering in thin films of an organic salt grown by organic vapor phase deposition (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1326-1328 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We discuss the growth of thin films of the organic salt, 4′-dimethylamino-N-methyl-4-stilbazolium tosylate (DAST) by the novel process of organic vapor phase deposition (OVPD). These films show long-range structural ordering and very intense second harmonic generation efficiencies (SHG) significantly greater (when normalized for thickness) than that of randomly oriented pure DAST powders. This is the first demonstration of such intense SHG radiation and long-range ordering for a thin film sample of a nonlinear organic salt. Furthermore, this work suggests that OVPD represents a general technique for growing thin films of highly polar, nonlinear optical materials such as DAST. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.115923
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 3
    Digitale Medien
    Digitale Medien
    Simple, very low dark current, planar long-wavelength avalanche photodiode (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1311-1313 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have demonstrated a novel planar, avalanche photodiode (APD) for use in long-wavelength (0.95–1.65 μm) optical communication systems. The device is a separate absorption and multiplication region APD utilizing p+ guard rings which are concentric with, but not attached to the central diffused p+-n junction region. Since no contact is made to the rings, their potential is allowed to "float'' at a value somewhat less than that established by the externally applied voltage. The APD, which is fabricated in a manner identical to simple p-i-n photodiodes, eliminates edge breakdown effects while greatly reducing the electric field at the insulator/semiconductor interface. A 60-μm-diam junction device grown by vapor phase epitaxy is observed to have a primary dark current of 〈300 pA, and a capacitance of 290 fF at 90% of the breakdown voltage. Uniform gains as high as 11 have been observed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.100006
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 4
    Digitale Medien
    Digitale Medien
    High rate epitaxial growth of InP by merged hydride organometallic vapor phase epitaxy in a hot-wall reactor (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 160-162 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A new method which combines features of organometallic vapor phase epitaxy (VPE) with hydride VPE has been demonstrated for the epitaxial growth of InP. In this method trimethylindium is coinjected with HCl into a hot-wall reactor to form volatile InCl, and PH3 is used as the phosphorus source. Layers of InP were grown at approximately 8 μm/h with excellent morphology and good electrical properties. Hall measurements at 77 K show background n-type conductivity with n=7×1015/cm3 and μ=34 000 cm2/V s. This technique should be capable of growing ternary and quaternary heterostructures with thin layers and abrupt junctions.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.109357
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 5
    Digitale Medien
    Digitale Medien
    Thin films of semiconductors and dielectrics produced by laser evaporation (1970)
    Springer
    Journal of materials science 5 (1970), S. 978-982 
    Details
    ISSN: 1573-4803
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau
    Notizen: Abstract Thin films of several III–V and II–VI compounds as well as of some dielectrics have been vacuum-deposited using a focused beam of a CO2 or ruby laser to evaporate these materials. The crystallinity, morphology and the chemical composition of the produced thin films have been examined by various analytical methods. Films produced by the ruby laser were in most cases polycrystalline and stoichiometric, while films produced by the CO2 laser were amorphous and non-stoichiometric. Different mechanisms of evaporation leading to the observed differences in characteristics of thin films are discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00558179
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
Schließen ⊗
Diese Webseite nutzt Cookies und das Analyse-Tool Matomo. Weitere Informationen finden Sie hier...