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  • 1
    Electronic Resource
    Electronic Resource
    Growth of Cd1−xMnxTe films by pulsed laser evaporation and epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 469-471 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial layers of (111) Cd1−xMnxTe (x=0.05) were grown on (111) GaAs substrates by pulsed laser evaporation and epitaxy. A XeCl excimer laser beam was directed at a Cd0.95Mn0.05Te target to produce the vapors necessary for deposition. A simultaneously operating pulse Nd:YAG laser was used to create the overpressure of Cd needed in the growth of stoichiometric films. In situ reflection high-energy electron diffraction, as well as scanning electron microscopy, energy-dispersive x-ray analysis, and photoluminescence study showed that the films had characteristics comparable to the best CdMnTe epilayers grown so far by molecular beam epitaxy or metalorganic chemical vapor deposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101855
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Dependence of the vacuum sublimation rate of CdTe upon crystallographic orientation (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 660-662 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of the crystallographic orientation dependence of the vacuum sublimation rate of undoped (111) and (100) CdTe crystals was carried out in the temperature range 310–390 °C. A rate of sublimation as high as 580 A(ring)/min was observed at 380 °C for the (111)Te face which was about 4 and 12 times higher than that of (111)Cd and (100) faces, respectively. The corresponding activation energies for sublimation of these faces were determined as 2.21, 1.79, and 1.54 eV. The differences and magnitudes of the sublimation rates decrease with decreasing temperature and at t≤310 °C the sublimation rate is less than 3 A(ring)/min, independent of the crystallographic orientation. The surface morphology of sublimated samples reveals thermal etch pits which are specific for each studied face. In the case of (111)Cd and (100) faces, etch pit densities up to about 107 cm−2 were observed, which probably corresponds to the concentration of dislocations and other defects present in the studied samples.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99843
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Lattice vibrations of cadmium manganese telluride alloys (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 310-314 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reflectivity spectra in the reststrahlen region (100–250 cm−1) are presented for bulk zinc blende Cd1−xMnxTe crystals at 2, 50, and 300 K and for x=0 to 0.64, covering nearly the entire possible composition range for cubic structure. Kramers-Kronig analysis gives the transverse and longitudinal phonon frequencies. The Lorentz model confirms these results and also gives mode strengths and damping constants. Compositional dependence of the phonon energies is predicted by the random element isodisplacement model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341428
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  • 4
    Electronic Resource
    Electronic Resource
    Optical studies of Cd0.9Mn0.1Te doped with Au, As, Cu, and P acceptors (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2396-2401 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical absorption and photoluminescence measurements were made on Cd0.9Mn0.1Te doped with As, P, Cu, and Au. Shallow acceptor ionization energies were determined as: 108 meV for P; 115 meV for As; 170 meV for Cu; and 180 meV for Au. These energies are larger than those for CdTe due to the formation of bound magnetic polarons. Self-consistent numerical calculations of the bound magnetic polarons are made for As and P dopants. The absorption spectra below 0.5 eV were separated into contributions from acceptor photoionization, inter- and intraband transitions, and free-hole absorption. Acceptor concentrations in the 1017 cm−3 range were found for As and P doping; however, Cu and Au were found to produce high compensation (〈1012 cm−3). Mechanisms for this behavior are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341058
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Electroreflectance studies above the fundamental gap on InxGa1−xAs layers deposited on GaAs (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 266-267 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interband transitions E1 and E1+Δ1 were investigated using the electrolyte electroreflectance technique for various compositions of InxGa1−xAs layers deposited on GaAs by molecular-beam epitaxy. A discrepancy in the results for layers deposited with lattice mismatch and bulk materials was noticed. The results were compared with the predictions of the scaled-virtual-crystal-approximation method for transition energy dependence on composition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336875
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  • 6
    Electronic Resource
    Electronic Resource
    Electroreflectance study of Hg1−xMnxTe in the E1 and E1+Δ1 energy regions (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1135-1138 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report electrolyte electroreflectance studies of the ternary semimagnetic semiconductor Hg1−xMnxTe for compositions below x=0.2. The dependence of E1 and E1+Δ1 transition energies on the composition was determined on the basis of the low field approximation. The present results are compared and discussed in relation to experimental data obtained previously and the theoretical predictions reported in the literature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337357
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Effects of dc bias on electrolyte electroreflectance spectra (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 368-371 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of a constant component of electric field (dc bias) across an electrolyte–semiconductor interface are studied and discussed. The change of bias causes variations in spectral features depending on the type of the semiconducting material and the position of a feature in relation to the interband transition energy. The phenomena are illustrated in experiments carried out on GaAs and HgMnTe. It is experimentally shown that dc bias in conjunction with the electrolyte electroreflectance technique can be used to determine the type of the material, to locate the flat-band potential, and to study the surface states. It has also been shown that dc bias can be used to determine low field conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337655
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    Paper (German National Licenses)
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