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  • 1
    Electronic Resource
    Electronic Resource
    Improved minority-carrier lifetime in Si/SiGe heterojunction bipolar transistors grown by molecular beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2560-2562 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Noncontact-probe photocarrier lifetime measurements have been used to give rapid feedback on minority-carrier lifetimes of epitaxial Si/SiGe layers grown by molecular beam epitaxy (MBE). In this manner, problems with impurity incorporation during the crystal growth can be rapidly diagnosed in a device-processing-independent fashion. These improvements in minority-carrier lifetime translate directly into high gains in the heterojunction bipolar transistors (HJBTs). HJBT test devices fabricated from the MBE-grown Si/SiGe layers show current gains as high as 800. The homojunction gain of this device is estimated to be ∼6, making the heterojunction gain on the order of 130.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102886
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  • 2
    Electronic Resource
    Electronic Resource
    Nonstationary 1/f noise in InP/InGaAs heterojunction bipolar transistors (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 198-200 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 1/f noise for most electronic systems is stationary in that repeated measurements of the noise power will give the same result within statistical uncertainty. In contrast, we have observed highly nonstationary 1/f noise in the output current of a series of InP based heterojunction bipolar transistors (HBTs). We have applied higher order statistics to the non-Gaussian fluctuations of these devices to probe the source of the intrinsic 1/f noise. We find signatures of superimposed Lorentzians making up an otherwise featureless 1/f noise spectrum consistent with generation-recombination-type noise in the base-emitter region of the device. The nonstationarity of these devices scales inversely with the device size as would be expected for an intrinsic mechanism. We suggest that these techniques may be utilized to a greater extent in the future as device sizes are reduced. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113133
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  • 3
    Electronic Resource
    Electronic Resource
    High temperature characteristics of InGaAsP/InP laser structures (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2402-2404 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the high temperature performance of conventional separate confinement and lattice matched and compressively strained multi-quantum-well InGaAsP lasers emitting at 1.3 μm. Low threshold buried heterostructure lasers operate reproducibly at temperatures as high as 130 °C. The rate of threshold change with temperature is described by T0∼45°–55° for both conventional and quantum well lasers. The rate of change is not influenced by any modifications in the active layer structure. In contrast, excellent correlation is observed between the active layer structure, parametrized as the threshold gain, and the peak cw operating temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109378
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  • 4
    Electronic Resource
    Electronic Resource
    Metalorganic molecular beam epitaxy of 1.3 μm quaternary layers and heterostructure lasers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1893-1895 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metalorganic molecular beam epitaxy of InGaAsP quaternary layers with the composition corresponding to the band gap at 1.3 μm has been investigated for growth temperatures ranging from 485 °C to 530 °C. From the x-ray diffraction and room temperature photoluminescence measurements Ga incorporation was found to be extremely growth temperature dependent. Photoluminescence linewidths increased rapidly for a negative lattice mismatch exceeding the critical value, whereas for positive mismatch no such broadening was observed. For lattice matched layers linewidths were broader for the higher growth temperatures. Threshold current densities ranging from 0.7 to 2.0 kA/cm2 were measured for conventional and multi-quantum-well broad area lasers with the active layers based on the 1.3 μm quaternary.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106180
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  • 5
    Electronic Resource
    Electronic Resource
    Selective area growth of heterostructure bipolar transistors by metalorganic molecular beam epitaxy (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 592-594 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heterostructure bipolar transistors (HBT) have been grown by selective area epitaxy (SAE) using metalorganic molecular beam epitaxy (MOMBE). dc characteristics, comparable to those for devices grown on unprocessed substrates, were obtained after removal of the edge growth. Data is also presented for devices in which the emitter mesas were regrown by SAE into openings which had been previously defined by photolithography on a structure containing only the collector and base layers. In both cases we use an in situ cleaning process consisting of an Ar ion beam sputtering and Cl2 etching. This step results in significantly improved junction quality.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107846
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  • 6
    Electronic Resource
    Electronic Resource
    Strained quaternary quantum well lasers for high temperature operation (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2321-2323 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe compressively strained separate confinement heterostructure 1.3 μm quantum well lasers optimized for high temperature operation. The active layer consists of ten GaInAsP wells, each 40–80 A(ring) thick, grown under compressive lattice mismatch strain of Δa/a≤0.75%. Within the constraints of the well composition and thickness imposed on the active region, strain is necessary for efficient laser operation. Best results are obtained for Δa/a∼0.2%–0.3% with the laser threshold as low as 5 mA and slope efficiency of 42 mW/mA. In the temperature range of 25–85 °C a slope efficiency change as small as 30% was achieved. Power output of at least 20 mW can be maintained up to 100 °C at a current drive below 150 mA.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110513
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  • 7
    Electronic Resource
    Electronic Resource
    Scanning force microscopy measurement of edge growth rate enhancement in selective area epitaxy (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 496-498 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using scanning force microscopy we have studied the growth rate enhancement at the edge of InP and lattice matched InGaAs layers grown into openings on SiO2-masked InP substrates by selective area epitaxy. The growth method was metalorganic molecular beam epitaxy. The growth rates were measured at the center and at the edge of the openings using a scanning force microscope. We have found that the growth rate enhancement can be minimized by using lower metalorganic and hydride flows, and that diffusion is the dominant process at work in the formation of the edge. The migration length of the species depends on the arrival rate of the precursor molecules to the substrate, determined by the absolute group III and V flows, and not on the nominal V/III ratio used for the growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108890
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