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  • 1
    Electronic Resource
    Electronic Resource
    Intermixing at the tantalum oxide/silicon interface in gate dielectric structures (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1517-1519 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal oxides with high dielectric constants have the potential to extend scaling of transistor gate capacitance beyond that of ultrathin silicon dioxide. However, during deposition of most metal oxides on silicon, an interfacial region of SiOx can form that limits the specific capacitance of the gate structure. We have examined the composition of this layer using high-resolution depth profiling of medium ion energy scattering combined with infrared spectroscopy and transmission electron microscopy. We find that the interfacial region is not pure SiO2, but is a complex depth-dependent ternary oxide of Si–Tax–Oy with a dielectric constant at least twice that of pure SiO2 as inferred from electrical measurements. High-temperature annealing crystallizes the Ta2O5 film and converts the composite oxide to a more pure SiO2 layer with a lower capacitance density. Using low postanneal temperatures, a stable composite oxide structure can be obtained with good electrical properties and an effective SiO2 thickness of less than 2 nm with ∼10 nm of composite oxide. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122191
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  • 2
    Electronic Resource
    Electronic Resource
    Electromigration in isolated aluminum vias probed by resistance changes and 1/f noise (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7596-7603 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 1/f noise and high-resolution resistance measurements have been performed in isolated aluminum via interconnects under electromigration stress. The test structures had a volume of roughly 1 μm3 and a resistance of 0.1 Ω with an internal TiN diffusion barrier. The 1/f resistance noise of the vias was found to be larger than the 1/f noise in the connecting aluminum runners due to the high intrinsic noise, high resistivity TiN layer within the structure. The direct currents induced reversible increases and decreases in the resistance of the via due to electromigration damage but had no effect on the 1/f noise. The magnitude and polarity dependence of the dc current induced resistance changes are most consistent with the initial electromigration of copper. Above 200 °C the resistance changes became dominated by abrupt jumps in the resistance. Possible mechanisms for the abrupt resistance changes are reviewed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362417
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  • 3
    Electronic Resource
    Electronic Resource
    Defect dominated charge transport in amorphous Ta2O5 thin films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 850-862 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ta2O5 is a candidate for use in metal–oxide–metal (MOM) capacitors in several areas of silicon device technology. Understanding and controlling leakage current is critical for successful implementation of this material. We have studied thermal and photoconductive charge transport processes in Ta2O5 MOM capacitors fabricated by anodization, reactive sputtering, and chemical vapor deposition. We find that the results from each of these three methods are similar if one compares films that have the same thickness and electrodes. Two types of leakage current are identified: (a) a transient current that charges the bulk states of the films and (b) a steady state activated process involving electron transport via a defect band. The transient process involves either tunneling conductivity into states near the Fermi energy or ion motion. The steady state process, seen most commonly in films 〈300 Å thick, is dominated by a large number of defects, ∼1019–1020 cm−3, located near the metal–oxide interfaces. The interior of thick Ta2O5 films has a substantially reduced number of defects. Modest heating (300–400 °C) of Ta2O5 in contact with a reactive metal electrode such as Al, Ti, or Ta results in interfacial reactions and the diffusion of defects across the thickness of the film. These experiments show that successful integration of Ta2O5 into semiconductor processing requires a better understanding of the impact of defects on the electrical characteristics and a better control of the metal–Ta2O5 interface. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373747
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  • 4
    Electronic Resource
    Electronic Resource
    Magnetically transduced surface acoustic wave devices (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6304-6306 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A type of surface acoustic wave (SAW) device is introduced in which coupling between the transducer and the acoustic medium is achieved using a magnetostrictive thin film. These magnetically transduced SAW devices have several advantages over conventional piezoelectric SAWs, and may expand the functionality of SAW devices in general. Several possible designs are presented, along with data from two prototypes. Results from these devices are promising, and they indicate that several acoustic modes, both surface and bulk, can be stimulated. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372687
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  • 5
    Electronic Resource
    Electronic Resource
    Thermal stability of Ta2O5 in metal–oxide–metal capacitor structures (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3705-3707 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using x-ray photoelectron spectroscopy and Rutherford backscattering spectrometry, we have studied structures used in metal–oxide–metal capacitors including Ta2O5/TiN/Ti, Ta2O5/Ti, Ta2O5/TaN/Ti, Ta2O5/WN/Ti, and Ta2O5/M, where M=Ta, Pt, W, Al, and Si. We find that Ti and Al are able to reduce the Ta2O5 to Ta, forming oxides of Ti and Al, respectively. The diffusion barriers TiN, TaN, and WN hamper the diffusion of oxygen and therefore postpone the reduction of Ta2O5 to higher temperatures. As judged by the temperatures at which the reduction of Ta2O5 occurs, TaN and WN are more effective oxygen-diffusion barriers than TiN. We observe no oxygen remaining in the diffusion barrier when a Ti layer is present underneath. We observe no reduction of Ta2O5 when M=Pt, W, or Si. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123227
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  • 6
    Electronic Resource
    Electronic Resource
    The effect of stress on the resistivity of submicron aluminum lines (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2372-2374 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stress coefficient of resistivity (piezoresistance coefficient) of passivated submicron Al-Cu lines was determined using a wafer-bending technique. This coefficient is significant for the interpretation of early resistance changes in reliability lifetime measurements. At room temperature the effect of stress on the resistivity of the lines is negligible. From 110 to 200 °C the piezoresistance coefficient is roughly constant at (Δρ/ρ)/Δσ∼1.2×10−5 MPa−1. Resistance changes associated with stress relaxation in the vicinity of a stress-induced void will be discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116137
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  • 7
    Electronic Resource
    Electronic Resource
    Tunneling current noise in thin gate oxides (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2885-2887 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have examined fluctuations in the tunneling current of 3.5 nm SiO2 barriers for voltages in the direct tunneling regime. We find a 1/f power law for the spectral density of the fluctuations where f is the frequency. This 1/f noise can be attributed to fluctuations of a trap assisted tunneling current through the oxide that causes current noise but is not evident in the I–V curves. We suggest that this noise may be a more sensitive probe of trap assisted tunneling and degradation in thin oxides than other measures. At voltages above a threshold of 2.5 V, we observe the reversible onset of non-Gaussian current transients in the noise. The onset of these current transients can be related to a transition in the spacial uniformity of the tunneling current density that may result in eventual breakdown of the oxide. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117351
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  • 8
    Electronic Resource
    Electronic Resource
    Effect of electronic corrections on the thickness dependence of thin oxide reliability (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2478-2480 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thickness dependence of constant voltage lifetime tests are compared for ultrathin oxides in the range of 50–125 Å. An apparent factor of 100 enhancement in the lifetime of 50 Å oxides relative to the 125 Å oxides is observed at a fixed electric field when the field in the oxide is calculated using the physical thickness of the oxide as determined by ellipsometry. When corrections are made for the distribution of electrons at the silicon interface including depletion in the silicon and quantum-mechanical screening effects then this apparent enhancement is reduced and all oxides have similar lifetimes at a fixed field. Such a rescaling of oxide reliability demonstrates the importance of accurate determination of electric field and oxide voltage in thin oxides and that oxide reliability is not significantly affected by thickness down to 50 Å, depending only on field. We compare different techniques for determining the effective thickness using current-voltage or capacitance-voltage (C-V) curves. We show that accurate estimates of the electric field can be obtained from integration of the C-V relation of the capacitor. When electric fields are calculated using C-V curves, a consistent set of extrapolation parameters can be obtained for all thicknesses. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120093
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  • 9
    Electronic Resource
    Electronic Resource
    1/f resistance noise in the large magnetoresistance manganites (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3644-3646 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resistance noise has been measured in thin films of La0.6Y0.07Ca0.33MnO3 at the ferromagnetic metal to paramagnetic-insulator transition where a large magnetoresistance is observed. Fluctuations in resistance were found to have a 1/f power law form throughout the transition where f is frequency. This intrinsic 1/f noise is much larger than what is typical for metallic films and is consistent with the fluctuation-dissipation theorem and magnetization fluctuations in the ferromagnetic phase. The implications of this large low frequency noise for practical magnetoresistive devices will be addressed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115757
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  • 10
    Electronic Resource
    Electronic Resource
    Nitrogen plasma annealing for low temperature Ta2O5 films (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1308-1310 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A low temperature oxygen/nitrogen plasma process is reported that substantially reduces leakage currents in chemical vapor deposited (CVD) and physical vapor deposited (PVD) films of tantalum oxide. We show that a combination of nitrogen and oxygen in a remote downstream microwave plasma source reduces leakage currents in CVD films of tantalum oxide and also reduces trap densities as measured by charge pumping. The as deposited CVD films show a high level of photoluminescence that is substantially lowered by the plasma anneal due to a reduction in the density of midgap states. For films deposited by PVD in the thickness range of 100 nm we find low leakage currents with a substantial improvement from the introduction of nitrogen into the plasma. However, PVD films in the thickness range of 20 nm show larger relative leakage currents and less of an improvement from the addition of nitrogen. The role of nitrogen in lowering leakage currents and charge trapping is thought to occur from a reduction in the density of bulk trap states in the oxide due to partial incorporation of nitrogen in the oxide. Both of these low temperature deposition and annealing processes are compatible with integration into the upper levels of metallization for high density circuits.© 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120569
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