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  • 1
    Electronic Resource
    Electronic Resource
    Defect dominated charge transport in amorphous Ta2O5 thin films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 850-862 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ta2O5 is a candidate for use in metal–oxide–metal (MOM) capacitors in several areas of silicon device technology. Understanding and controlling leakage current is critical for successful implementation of this material. We have studied thermal and photoconductive charge transport processes in Ta2O5 MOM capacitors fabricated by anodization, reactive sputtering, and chemical vapor deposition. We find that the results from each of these three methods are similar if one compares films that have the same thickness and electrodes. Two types of leakage current are identified: (a) a transient current that charges the bulk states of the films and (b) a steady state activated process involving electron transport via a defect band. The transient process involves either tunneling conductivity into states near the Fermi energy or ion motion. The steady state process, seen most commonly in films 〈300 Å thick, is dominated by a large number of defects, ∼1019–1020 cm−3, located near the metal–oxide interfaces. The interior of thick Ta2O5 films has a substantially reduced number of defects. Modest heating (300–400 °C) of Ta2O5 in contact with a reactive metal electrode such as Al, Ti, or Ta results in interfacial reactions and the diffusion of defects across the thickness of the film. These experiments show that successful integration of Ta2O5 into semiconductor processing requires a better understanding of the impact of defects on the electrical characteristics and a better control of the metal–Ta2O5 interface. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373747
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  • 2
    Electronic Resource
    Electronic Resource
    In situ fabricated Ga2O3–GaAs structures with low interface recombination velocity (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 625-627 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous Ga2O3 films have been deposited in situ on (100) GaAs layers grown by molecular beam epitaxy in ultrahigh vacuum. The Ga2O3–GaAs interface is stable during photoexcitation and the photoluminescence (PL) intensity, measured at 514.5 nm excitation wavelength, is enhanced drastically by a factor of 420 as compared to a corresponding bare GaAs surface. The Ga2O3–GaAs interface recombination velocity derived from a modified dead layer model is below 104 cm/s. Furthermore, the PL intensity of Ga2O3–GaAs structures approaches that of a very low interface state density (2×109 eV−1 cm−2) AlGaAs–GaAs reference structure. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114034
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  • 3
    Electronic Resource
    Electronic Resource
    Recombination velocity at oxide–GaAs interfaces fabricated by in situ molecular beam epitaxy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3605-3607 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The recombination velocity at oxide–GaAs interfaces fabricated by in situ multiple-chamber molecular beam epitaxy has been investigated. Ga2O3, Al2O3, SiO2, and MgO films have been deposited on clean, atomically ordered n- and p-type (100) GaAs surfaces using molecular beams of Ga–, Al–, Si–, and Mg oxide, respectively. Based on the internal quantum efficiency measured for incident light power densities 1≤P0≤104 W/cm2, the interface recombination velocity S has been inferred using a self-consistent numerical heterostructure device model. While Al2O3–, SiO2–, and MgO–GaAs structures are characterized by an interface recombination velocity which is comparable to that of a bare GaAs surface ((approximately-equal-to) 107 cm/s), S observed at Ga2O3–GaAs interfaces is as low as 4000–5000 cm/s. The excellent Ga2O3–GaAs interface recombination velocity is consistent with the previously reported low interface state density in the mid 1010 cm−2 eV−1 range. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116652
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