Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Effects of annealing ambient on the electrical properties in heavily C-doped p+-AlGaAs (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4975-4977 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal behavior of the carrier concentration and the lattice constant in heavily carbon-doped p+-AlGaAs epilayers grown by metalorganic chemical vapor deposition are dramatically dependent on the annealing ambient at temperatures between 500 and 700 °C. Annealing in a hydrogen and arsine mixed gas ambient decreases the carrier concentration and increases the lattice constant. On the other hand, annealing in a hydrogen gas ambient increases the carrier concentration and decreases the lattice constant between 500 and 600 °C, which is consistent with our previous data for annealing in a nitrogen gas ambient. However, the carrier concentration after annealing at 700 °C is a little lower in hydrogen than in nitrogen. The above behavior of the carrier concentration and the lattice constant is well explained by incorporating and removing the hydrogen atoms in the epilayers during annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352070
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Effect of post-growth annealing on the recombination centers in C-doped p+-GaAs/n-AlGaAs heterojunctions (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 894-900 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recombination current in carbon-doped p+-GaAs/n-AlGaAs junction diodes can be reduced by post-growth annealing of the epilayers at 600 and 700 °C but not at 500 °C. The reduction of recombination current at 600 °C under the face-to-face or SiO2 capped condition is by far larger than that under high-AsH3 flow, i.e., arsenic overpressure condition. The reduction can be primarily attributed to the reduction in the 0.55-eV deep levels of recombination centers, which may be an oxygen related complex level with As atoms. The reduction of recombination current at 600 °C is a little smaller when cooling after annealing proceeds slowly, which may be mainly due to around 0.5 eV levels being created during slow cooling. Degradation in the carrier and dopant profiles near junction is not detected even after 700 °C annealing. Annealing at temperatures of 600 °C or higher followed by fast cooling without arsenic overpressure ambient is thus promising for the reduction of recombination centers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349620
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Microscopically inhomogeneous GaAs/InGaP/n+InGaAs epilayer qualities induced by Si implantation and annealing (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5939-5944 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the effect of Si ion implantation and subsequent rapid thermal annealing (RTA) on the homogeneity of the crystal quality of metalorganic chemical-vapor-deposited GaAs (150 A(ring))/InGaP (100 A(ring))/n+InGaAs:Si (150–200 A(ring))/GaAs (800 A(ring)) epilayers, which is the structure for heterostructure metal–semiconductor field-effect transistors. It is found that ion implantation to a dose higher than 3×1013 cm−2 at energies between 30 and 90 keV and RTA causes the appearance of dark regions in and near the InGaP layers and the disappearance of the InGaP ordered structure in the lattice images taken with a transmission electron microscope. In the dark regions, the interfaces between the InGaP layer and the GaAs and InGaAs layer become indistinct. An energy-dispersive x-ray analysis shows that compositional atoms intermix through these interfaces. The intermixing seems to be enhanced by implantation damage rather than by the interactions of Si impurities. On the other hand, 1×1013 cm−2 implantation causes no dark regions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360596
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Effect of oxygen-implant isolation on the recombination leakage current of n-p+ AlGaAs graded heterojunction diodes (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1892-1894 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The recombination leakage current induced by planar isolation of n-p+AlGaAs graded heterojunction area with oxygen ion implantation followed by annealing at 500–650 °C has been investigated. The recombination leakage current is smaller than that induced by conventional isolation with hydrogen ion implantation; specifically, it is about one order of magnitude smaller after the higher temperature (600–650 °C) annealing. The main origin of the remaining recombination leakage current is probably not oxygen deep levels but rather recombination centers related to the ion implantation damage that remains after annealing. A point-defect complex level, which may be related to the recombination center, is detected at an activation energy of around 0.8 eV by deep level transient spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104003
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Reduction of recombination centers in C-doped p+-GaAs/n-AlGaAs heterojunctions by post-growth annealing (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 934-936 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of post-growth annealing at 500, 600, and 700 °C on the electrical characteristics of C-doped p+-GaAs/n-AlGaAs junction diodes fabricated with metalorganic chemical vapor deposition layers has been investigated. Recombination current is reduced by post-growth annealing at 600 and 700 °C, but not at 500 °C. The current reduction is primarily attributed to the dramatic reduction of 0.55 eV deep levels, which may be oxygen related complex levels. Under present annealing conditions, no degradation of carrier profiles near the p+-n junction is detected. Thus, post-growth annealing at temperatures of 600 °C or higher is a promising method for reducing recombination centers in the C-doped p+-GaAs/n-AlGaAs junction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104482
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Current gain reduction by 0.45 eV oxygen related level in graded band-gap AlGaAs base-emitter of heterojunction bipolar transistors (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3407-3409 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: There are good indications that the deep level around 0.45 eV induced by oxygen acts as an effective electrical recombination center in heterojunction bipolar transistors with a graded band-gap AlGaAs emitter-base junction. The transistor, with a concentration of the 0.45 eV level on the order of about 5×1015 cm−3 in the junction region, shows a very small current gain of 3–4, down from more than 30 at a collector current density of 1×103 A/cm3. This reduction is greater than the previously reported one by the level approximately 0.6 eV in heterojunction bipolar transistors. The level about 0.45 eV is detected from the junction region that has an oxygen atom concentration of more than 1018 cm−3. This level may also act as an optically nonradiative recombination center.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105690
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Electrical and optical properties of oxygen-ion hot-implanted GaAs layers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2540-2542 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxygen-ion hot implantation into undoped GaAs has been investigated as fundamental research for the purpose of fabricating highly resistive isolation regions at lower temperatures. Hot implantation at 300 °C at an energy of 170 keV and a dose of 1×1015 cm−2 results in a sheet resistivity of 4×106 Ω/(D'Alembertian) without post-implant annealing and 7.7×106 Ω/(D'Alembertian) after annealing at 400 °C for 10 min. These values are about one order of magnitude higher than those obtained after implantation at the same energy and dose done at room temperature. This high resistivity of the hot-implanted layers is caused by both the removal of hopping conduction with an activation energy of 0.06 eV and the formation of 0.24–0.27 eV deep-level electron traps. The effective reduction in implantation damage resulting from hot implantation, which induces the removal of hopping conduction, is confirmed by laser Raman spectroscopy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111567
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Annealing effect on the carrier concentration in heavily C-doped p+-AlGaAs (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 847-849 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carrier concentration in heavily carbon-doped p+-AlGaAs epilayers grown by metalorganic chemical vapor deposition is increased by annealing at temperatures from 500 to 800 °C under a SiN capped condition in nitrogen gas ambient and is decreased by annealing at 850 °C. The carrier concentration reaches a maximum value corresponding to nearly 100% activation at about 600 °C. These thermal behaviors can be well explained by the overlapping of two components. One is the carrier increase which occurs even at as low as 500 °C and is related to the decrease of hydrogen atoms in the epilayers. The hydrogen atoms probably deactivate the carbon acceptors in a nearly one-to-one correspondence. The other is the carrier decrease at temperatures higher than 600 °C, which may be due to a change in the occupation site preference of carbon atoms from arsenic sites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106533
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Annealing effect on the electrical properties of heavily C-doped p+GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 434-436 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The carrier concentration in heavily carbon-doped p+-GaAs epilayers (about 1.3×1020 cm−3) is decreased together with the mobility by annealing at temperatures of 700 °C or higher but not at temperatures of 600 °C or lower. In comparatively lightly C-doped p+ epilayers (about 3.5×1019 cm−3), the carrier concentration is not decreased by annealing at temperatures from 500 to 850 °C. The deep photoluminescence peak at a wavelength of around 1080 nm accompanied by a hump at around 1420 nm are found only in heavily C-doped epilayers; the wavelength of this peak is very close to that of the Ga vacancy −the C donor center. The photoluminescence intensity is increased by the annealing at 850 °C but not at 600 °C. The thermal behaviors of the deep photoluminescence levels can well explain those of carrier concentration and mobility if we consider the photoluminescence levels to be the index for the compensation centers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105454
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Cyclotrigermenes: A New Unsaturated Ring System (1995)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 117 (1995), S. 8025-8026 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00135a025
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...