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  • 1
    ISSN: 1744-313X
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Medicine
    Notes: Two chemokine (C-X3-C) receptor 1 (CX3CR1) gene polymorphisms, V249I and T280M, and 10 CC chemokine receptor 5 (CCR5) promoter haplotypes, P1–P10, have recently been reported to influence the progression of acquired immune-deficiency syndrome (AIDS). As these studies were performed mainly with Caucasian and African-American subjects, we determined the distribution of these alleles in Chinese people for the purpose of predicting possible clinical responses to the human immunodeficiency virus type 1 (HIV) epidemics in countries with significant Chinese populations, as well as to establish their effects on the expression of surface CCR5. Ninety-six HIV-negative Chinese individuals in Taiwan were subjected to genotyping, and we thus determined that the allelic frequencies of CX3CR1V249I and T280M changes were 2.6% and 2.1%, respectively, which were lower than found in Caucasians (25.5% and 14.0%, respectively). Unlike the previous reports, we only detected CCR5P1 and P4 haplotypes in Taiwanese people, and the P1/P1, P1/P4 and P4/P4 genotype frequencies were 21.0%, 41.1% and 37.9%, respectively. The sequencing data confirmed the results of previous studies, showing that CCR5P1 exhibited a complete linkage disequilibrium with a polymorphic allele 59029A present in the CCR5 promoter. Furthermore, fluorescence-activated cell sorter analysis revealed that, in the absence of the CCR2–64I mutation, individuals carrying CCR5P1 tended to express more surface CCR5 on monocytes and CD4+ cells. Therefore, this study not only reports the frequencies for the CX3CR1 and CCR5 promoter haplotypes in a Chinese population living in Taiwan, but also identifies a statistical link between the P1/P1 haplotype and the elevated CCR5 expression levels in the study group.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    International urogynecology journal 10 (1999), S. 277-282 
    ISSN: 1433-3023
    Keywords: Key words: Bladder neck hypermobility; Dynamic displacement; Genuine stress incontinence; Perineal sonography
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract: Location of the bladder neck and its dynamic motion are believed to be influenced by body position. This study was designed to evaluate factors affecting bladder neck mobility in both supine and standing positions. The parameters of 75 GSI patients and 49 controls were compared by Student’s t-test. Receiver operating characteristic curves and multiple logistic regression analysis were used to analyze the effects of potential contributing factors on bladder neck mobility. We were unable to find any significant correlation between bladder neck hypermobility and GSI. We also failed to demonstrate that bladder neck hypermobility in the supine or standing position relative to previous believed risk factors, including parity, vaginal delivery, menopause, cystocele, rectocele, uterine prolapse or body mass index. In order to elucidate the pathophysiology of bladder neck mobility clearly, changes in intra-abdominal pressure and gravitational direction in different positions should be evaluated carefully and scientifically in further studies.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    Journal of Applied Polymer Science 55 (1995), S. 1537-1551 
    ISSN: 0021-8995
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: There has been an increasing interest in depositing metal or metal-containing thin films through plasma polymerization for various applications. This work deals with the plasma graft polymerization of tetramethyltin (TMT) on polypropylene surfaces with an aim of producing special electrical and optical coatings. The fragmentation of TMT under cold plasma conditions and the recombination of discharge-generated active species were studied by analyzing the resulting molecular mixture trapped outside of the plasma zone by HR-MS and GC-MS techniques. It was found that the predominant ionic fragment is m/z = 165, and the most probable intermediate structure of the polymer formation mechanism is hexamethylditin. The structure of polymeric layers deposited on various substrates were investigated by ESCA and FT-IR methods. Intense oxidation of tin-based polymeric layers were observed under open laboratory conditions. The existence of weak Sn—Sn and Sn—C bonds in the polymeric structure is suggested to be responsible for this reaction. This phenomenon was associated with enhanced UV transparency. Based on analytical data a plasma-enhanced polymerization mechanism of TMT is proposed. © 1995 John Wiley & Sons, Inc.
    Additional Material: 17 Ill.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1436-2449
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Summary Cold plasma chemistry can be used for surface modification and/or grafting of polymeric substrates for enhanced properties. In addition to interaction with the substrate, plasma reactions can also occur at other surfaces confined to the reactor. Contamination of polypropylene (PP) substrates with silicon, originating from the reactor walls in a BCl3 plasma, has been shown to occur based on ESCA measurements and the presence of Si-based compounds in the gaseous phase has been shown by GC-MS and high resolution MS for the plasma generated molecular mixture. The Si incorporation is similar to that found with CF4 plasmas where a shorter treatment time resulted in higher Si incorporation. These results indicate that reactor wall-origin contaminations can accompany plasma treatments, interfere with the the main reaction mechanisms and create serious problems for achieving the desired surface properties.
    Type of Medium: Electronic Resource
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