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  • 1
    Electronic Resource
    Electronic Resource
    Coulomb blockade effects and conduction mechanism in extremely thin polycrystalline-silicon wires (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5213-5220 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Narrow (≥95 nm) and extremely thin (∼7 nm) heavily phosphorous-doped polycrystalline-silicon (poly-Si) wires were fabricated by low-pressure chemical vapor deposition. The electrical conduction mechanism has been investigated at low temperatures (down to ∼5 K), and observation by transmission electron microscopy (TEM) was carried out. Single-electron effects such as Coulomb oscillations have been observed at temperatures up to 80 K. The size of the island in the poly-Si wires was estimated from the electrical properties, and it was in the same order as the grain size of the poly-Si measured by TEM. A maximum tunnel barrier height of ∼26 meV of the poly-Si grain boundary is obtained from the temperature dependence of the conductance of the sample. A model for the electronic conduction through multiple islands was proposed from the width dependence of their electrical properties. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1464650
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  • 2
    Electronic Resource
    Electronic Resource
    Fine particulate contaminant control by the UV/photoelectron method under a low pressure condition (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 5348-5351 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new method for removing fine airborne particles using an UV/photoelectron method is investigated for low pressure conditions. In the UV/photoelectron method, particles are unipolarly charged by collision with ions, which are produced by photoelectrons emitted from an UV-irradiated Au film. The particles are collected on electrodes under a strong electric field. To investigate the particle collection efficiency, a test chamber of 53l in volume is used in the experiment. More than 95% of the particles are removed by the method where the chamber pressure is above 10 Torr and the particle diameter ranges from 200 to 400 nm. The results can be explained by the current charging theory of fine particles. This method can be used to design superclean spaces for the storage and handling of wafers, such as wafer stockers, wafer delivering systems, and vacuum load-lock chambers under conventional operating conditions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146111
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  • 3
    Electronic Resource
    Electronic Resource
    Atomic layer controlled deposition of silicon nitride with self-limiting mechanism (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3257-3259 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin (2–10 nm) silicon nitride films have been grown by repetitive plasma nitridation of Si using a NH3 remote plasma and deposition of Si by a SiH2Cl2 thermal reaction. The deposition rate is self-limited at nearly half-molecular layer (ML) per one deposition cycle. The process window for the half-ML/cycle of growth has been investigated with respect to the NH3 plasma power, SiH2Cl2 exposure time, and substrate temperature. The thickness fluctuation of the film over a 2 in. wafer is within measurement accuracy of the ellipsometer (± 1.9%) for the atomic layer controlled film while it is ± 8.5% for all the remote-plasma chemical vapor deposition film. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116566
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  • 4
    Electronic Resource
    Electronic Resource
    Solid phase epitaxy of molecular beam deposited amorphous GaAs on Si (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2562-2564 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Solid phase epitaxial (SPE) crystallization of amorphous GaAs on (100) Si tilted by 4° toward 〈011〉 formed by molecular beam deposition (MBD) was first achieved by cw Kr laser irradiation for short durations. The ratio of As to Ga (y/x) in deposited amorphous GaxAsy films was varied from 0.4 to 1.2. During the laser irradiation, movement of the amorphous/crystalline interface was measured using time-resolved optical reflectivity (TROR). It was found from TROR and micro-Raman scattering measurements that hetero-SPE is attained in samples with As/Ga ratios ranging from 0.8 to 1.1 and that the interface roughness is larger than that observed in homo-SPE (e.g., MBD GaAs on GaAs and P+ ion-implanted GaAs).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101050
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  • 5
    Electronic Resource
    Electronic Resource
    Characterization of silicon/oxide/nitride layers by x-ray photoelectron spectroscopy (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1535-1537 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Core-level intensities for Si 2p, Si 2s, O 1s, and N 1s were measured by x-ray photoelectron spectroscopy in bulk samples of silicon, SiO2 and Si3N4. A complete and consistent set of intensity ratios is given and applied for calculations of thickness and stoichiometry in thin Si/oxide/nitride layers, which can be used for gate dielectrics in advanced metal–oxide–semiconductor field-effect transistor fabrication. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124747
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  • 6
    Electronic Resource
    Electronic Resource
    Conduction mechanism of Si single-electron transistor having a one-dimensional regular array of multiple tunnel junctions (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 733-735 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Uniformly doped Si single-electron transistors consisting of a one-dimensional regular array of multiple tunnel junctions (MTJs) and islands have been fabricated. The Coulomb blockade effect is found to play an important role in carrier conduction in the MTJ system at low temperatures (6 K). The conduction mechanism can be interpreted well by considering soliton. The soliton extends less than three islands in our MTJs, and the energy of a single soliton is found to be 0.024 eV from an analysis of low-temperature current–voltage characteristics. For high-temperature operation, it is effective to reduce the parasitic capacitance of each island, which leads to an increase in soliton length. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1492318
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  • 7
    Electronic Resource
    Electronic Resource
    Self-limiting atomic-layer deposition of Si on SiO2 by alternate supply of Si2H6 and SiCl4 (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 617-619 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic-layer deposition of Si on SiO2 with a self-limiting growth mode was achieved at substrate temperatures between 355 and 385 °C by means of alternate supply of Si2H6 and SiCl4 gas sources. The growth rate was saturated at 2 ML per cycle at these temperatures and for Si2H6 exposure time over 120 s. The smooth surface (∼0.26 nm in arithmetic average roughness) was obtained under the self-limiting condition irrespective of a film thickness up to 6.5 nm. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1389508
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  • 8
    Electronic Resource
    Electronic Resource
    Atomic-layer-deposited silicon-nitride/SiO2 stacked gate dielectrics for highly reliable p-metal–oxide–semiconductor field-effect transistors (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2855-2857 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An extremely thin (∼0.4 nm) silicon-nitride layer has been deposited on thermally grown SiO2 by an atomic-layer-deposition (ALD) technique. The boron penetration through the stacked gate dielectrics has dramatically been suppressed, and the reliability has been significantly improved, as confirmed by capacitance–voltage, gate-current–gate-voltage, and time-dependent dielectricbreakdown characteristics. The ALD technique allows us to fabricate an extremely thin, very uniform silicon-nitride layer with atomic-scale control. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1320847
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  • 9
    Electronic Resource
    Electronic Resource
    Soft-breakdown-suppressed ultrathin atomic-layer-deposited silicon–nitride/SiO2 stack gate dielectrics for advanced complementary metal–oxide–semiconductor technology (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3488-3490 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a high-quality, ultrathin atomic-layer-deposited silicon–nitride/SiO2 stack gate dielectric. p+-polycrystalline silicon gate metal–oxide–semiconductor (MOS) capacitors with the proposed dielectrics showed enhanced reliability with respect to conventional SiO2. An exciting feature of suppressed soft-breakdown (SBD) events is observed in ramped voltage stressing which has been reconfirmed during time-dependent-dielectric breakdown measurements under constant field stressing. Introducing the idea of injected-carrier-induced localized physical damages resulting in the formation of conductive filaments near both Si/SiO2 and poly-Si/SiO2 interfaces, a model has been proposed to explain the SBD phenomena observed in the conventional SiO2 dielectrics. It is then consistently extended to explain the suppressed SBD in the proposed dielectrics. The reported dielectric can be a good choice to meet the urgent need for highly reliable ultrathin gate dielectrics in nanoscale complementary-MOS technology. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1420586
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  • 10
    Electronic Resource
    Electronic Resource
    NH3-annealed atomic-layer-deposited silicon nitride as a high-k gate dielectric with high reliability (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1252-1254 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Extremely thin (equivalent oxide thickness, Teq=1.2 nm) silicon-nitride high-k (εr=7.2) gate dielectrics have been formed at low temperatures (≤550 °C) by an atomic-layer-deposition (ALD) technique with subsequent NH3 annealing at 550 °C. A remarkable reduction in leakage current, especially in the low dielectric voltage region, which will be the operating voltage for future technologies, has made it a highly potential gate dielectric for future ultralarge-scale integrated devices. Suppressed soft breakdown events are observed in ramped voltage stressing. This suppression is thought to be due to a strengthened structure of Si–N bonds and the smoothness and uniformity at the poly-Si/ALD-silicon-nitride interface. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1447314
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